The BD8179MUV is a system power supply IC for TFT panels.
A 1-chip IC providing a total of three voltages required for TFT panels, i.e., source voltage, gate high-level, and gate low-level
voltage, thus constructing a TFT panel power supply with minimal components required.
Power Supply Voltage VIN 7 V
VMAIN Voltage VMAIN 20 V
SUP Voltage VSUP 20 V
DRVP Voltage VDRVP 40 V
DRVN Voltage VDRVN -30 V
SRC Voltage VSRC 40 V
CTL Voltage VCTL 7 V
Junction Temperature Tjmax 150 ℃
Power Dissipation Pd 4560 mW
Operating Temperature Range Topr -40~85 ℃
Storage Temperature Range Tstg -55~150 ℃
* Reduced by 19.52 mW/℃ over 25℃, when mounted on a glass epoxy board.
(4-layer 74.2 mm 74.2 mm 1.6 mm).
●Operating Condition
Parameter Symbol
Power Supply Voltage VIN 2.6 5.5 V
VMAIN Voltage VMAIN 8 18 V
SUP Voltage VSUP - 18 V
DRVP Voltage VDRVP - 38 V
DRVN Voltage VDRVN - -20 V
SRC Voltage VSRC - 38 V
A controller circuit for DC/DC boosting.
The switching duty is controlled so that the feedback voltage FB is set to 1.233 V (typ.).
A soft start operates at the time of starting.
Gate-on Controller
A controller circuit for the positive-side charge pump.
The liner regulator controls so that the feedback voltage FBP will be set to 1.25 V (typ.).
Gate-off Controller
A controller circuit for the negative-side charge pump.
The liner regulator controls so that the feedback voltage FBN will be set to 0.25 V (Typ.).
Gate Shading Controller
A controller circuit for MOS FET Switch
The COM switching synchronize with CTL input.
Start-up Controller
A control circuit for the starting sequence.
Controls to start in order of V
REF
A block that generates internal reference voltage. 1.25V (Typ.) is output.
TSD/UVLO/OVP
Thermal shutdown/Under-voltage lockout protection/circuit blocks.
The thermal shutdown circuit is shut down at an IC internal temperature of 175°C and reactivate at 160°C.
The under-voltage lockout protection circuit shuts down the IC when the VIN is 2.4 V (typ.) or below.
The over-voltage lockout protection circuit shuts down the IC when the SUP is 19.0 V (typ.) or over.
OP1~OP5
Operational amplifier block
●Starting sequence
①UVLO released when V
②Step up DCDC converter starts switching, and V
③VDEL starts.
④VCOM ON when VDEL reaches 1.25V
The UVLO circuit compares the input voltage at IN with the UVLO threshold (2.4V rising, 2.2V falling, typ) to ensure the input
voltage is high enough for reliable operation.
The 200mV (typ) hysteresis prevents supply transients from causing a restart. Once the input voltage exceeds the UVLO
rising threshold, startup begins. When the input voltage falls below the UVLO falling threshold, the controller turns off the
main step-up regulator, turns off the linear-regulator outputs, and disables the Gate Shading controller.
●Thermal Shut Down (TSD)
The TSD prevents excessive power dissipation from overheating the BD8179MUV. When the junction temperature exceeds
Tj=175℃(Typ), a thermal sensor immediately activates. The fault protection, which shuts down all outputs except the
reference, allowing the device to cool down. Once the device cools down by approximately 15℃ reactivate the device.
●Over Voltage Protection (OVP)
The Step up DC/DC converter has OVP circuit.
The OVP circuit compares the input Voltage at SUP with the OVP threshold (19V rising, 18.5V falling, Typ) to protect the step
up DC/DC output exceed the absolute maximum voltage. Once the SUP Voltage exceeds the OVP rising threshold, turn off
the main Step-up regulator.
Then, the SUP Voltage falls bellow the OVP falling threshold,reactivate the main Step-Up regulator.
●Over Current Protection (OCP)
The Step-Up DC/DC converter, linear-regulator and Operational Amplifier have OCP circuit respectively.
The OCP circuit restricts to load current, when an OCP activated, one’s own output only restricted.
However, if the output continue to overload, the device is possible to activate thermal shutdown or short current protection.
●Timer Latch Mode Short Current Protection (SCP)
BD8179MUV has SCP circuit feature to prevent the large current flowing when the output is shorted to GND.
This function is monitoring V
properly (when the output voltage was lower than expected).
After 150ms (Typ.) of this abnormal state, the device will shutdown the all outputs and latch the state.
V
MAIN
V
GON
GOFF
V
FB
FBP
FBN
MAIN, VGON, and VGOFF Voltage and starts the timer when at least one of the outputs operating
The coil to use for output is decided by the rating current ILR and input current maximum value IINMAX of the coil.
IL
Fig.14 Coil Current Waveform
Adjust so that I
INMAX +∆IL does not reach the rating current value ILR. At this time, ∆IL can be obtained by the following
equation.
ΔIL =
1
Vcc
L Vcc f
Vo-Vcc
Set with sufficient margin because the coil value may have the dispersion of 30%. If the coil current exceeds the rating
current ILR of the coil, it may damage the IC internal element.
BD8179MUV uses the current mode DC/DC converter control and has the optimized design at the coil value. A coil
inductance (L) of 4.7 µH to 15 µH is recommended from viewpoints of electric power efficiency, response, and stability.
(2) Output Capacity Settings
For the capacitor to use for the output, select the capacitor which has the larger value in the ripple voltage V
value and the drop voltage allowance value at the time of sudden load change. Output ripple voltage is decided by the
following equation.
PP = ILMAX RESR +
⊿V
Perform setting so that the voltage is within the allowable ripple voltage range. For the drop voltage during sudden load
change; V
DR, please perform the rough calculation by the following equation.
VDR =
⊿I
10 us [V]
Co
However, 10 µs is the rough calculation value of the DC/DC response speed. Please set the capacitance considering the
sufficient margin so that these two values are within the standard value range.
(3) Selecting the Input Capacitor
Since the peak current flows between the input and output at the DC/DC converter, a capacitor is required to install at the
input side. For the reason, the low ESR capacitor is recommended as an input capacitor which has the value more than
10 µF and less than 100 mΩ. If a capacitor out of this range is selected, the excessive ripple voltage is superposed on the
input voltage, accordingly it may cause the malfunction of IC.
However these conditions may vary according to the load current, input voltage, output voltage, inductance and switching
frequency. Be sure to perform the margin check using the actual product.
(4) Setting RC, CC of the Phase Compensation Circuit
In the current mode control, since the coil current is controlled, a pole (phase lag) made by the CR filter composed of the
output capacitor and load resistor will be created in the low frequency range, and a zero (phase lead) by the output
capacitor and ESR of capacitor will be created in the high frequency range. In this case, to cancel the pole of the power
amplifier, it is easy to compensate by adding the zero point with C
the illustration.
Open loop gain characteristics
Gain
[dB]
Phase
[deg]
-90
A
0
0
fp(Min)
l
OUTMi n
fp(Ma x)
OUTMax
l
Error amp phase
compensation characteristics
Gain
[dB]
Phase
[deg]
A
0
0
-90
Fig. 16 Gain vs Phase
L
V
CC
Cin
Rc
Cc
COM P
Vcc,P Vcc
SW
GND,PGND
Fig. 17 Application Circuit Diagram
It is possible to realize the stable feedback loop by canceling the pole fp(Min.), which is created by the output capacitor
and load resistor, with CR zero compensation of the error amp as shown below.
fz(Amp.) = fp(Min.)
1
2 π Rc Cc 2π
-
fz(ESR)
ESR
Co
Ro
1
Romax C
Technical Note
C and RC to the output from the error amp as shown in
Fp =
RO CO
2 π
1
1
fz(ESR) =
Pole at the power amplification stage
2π E
SR CO
When the output current reduces, the load resistance
o increases and the pole frequency lowers.
R
1
fp(Min) =
2 ROMax CO
1
fz(Max) =
2
R OMi n CO
Zero at the power amplification stage
When the output capacitor is set larger, the pole
frequency lowers but the zero frequency will not
change. (This is because the capacitor ESR
becomes 1/2 when the capacitor becomes 2 times.)
Refer to the following equation to set the feedback resistor. As the setting range, 10 kΩ to 330 kΩ is recommended. If the
resistor is set lower than a 10 kΩ, it causes the reduction of power efficiency. If it is set more than 330 kΩ, the offset
voltage becomes larger by the input bias current 0.4 µA(Typ.) in the internal error amplifier.
MAIN =
V
R1 + R2
R2
1.233 [V]
(6) Positive-side Charge Pump Settings
BD8179MUV incorporates a charge pump controller, thus making it possible to generate stable gate voltage.
The output voltage is determined by the following formula. As the setting range, 10 kΩ to 330 kΩ is recommended. If the
resistor is set lower than a 10kΩ, it causes the reduction of power efficiency. If it is set more than 330 kΩ, the offset
voltage becomes larger by the input bias current 0.4 µA (Typ.) in the internal error amp.
GON =
V
R3 + R4
R4
1.25 [V]
In order to prevent output voltage overshooting, add capacitor C3 in parallel with R3. The recommended capacitance is
1000 pF to 4700 pF. If a capacitor outside this range is inserted, the output voltage may oscillate.
By connecting capacitance to the DEL, a rising delay time can be set for the positive-side charge pump.
The delay time is determined by the following formula.
Delay time of charge pump block t
DELAY = ( CDEL 1.25 )/5 µA [s]
t
Where, CDEL is the external capacitance.
(7) Negative-side Charge Pump Settings
BD8179MUV incorporates a charge pump controller for negative voltage, thus making it possible to generate stable gate voltage.
The output voltage is determined by the following formula. As the setting range, 10 kΩ to 330 kΩ is recommended. If the
resistor is set lower than a 10 kΩ, it causes the reduction of power efficiency. If it is set more than 330 kΩ, the offset
voltage becomes larger by the input bias current 0.4 µA (Typ.) in the internal error amp.
GOFF = -
V
R5
1.0 + 0.25 V [V]
R6
The delay time is internally fixed at 200 us.
In order to prevent output voltage overshooting, insert capacitor C5 in parallel with R5. The recommended capacitance is
1000 pF to 4700 pF. If a capacitor outside this range is inserted, the output voltage may oscillate.
1) Absolute maximum ratings
Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may
result in IC damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when such
damage is suffered. A physical safety measure such as a fuse should be implemented when use of the IC in a special
mode where the absolute maximum ratings may be exceeded is anticipated.
2) GND potential
Ensure a minimum GND pin potential in all operating conditions.
3) Setting of heat
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
4) Pin short and mistake fitting
Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result in
damage to the IC. Shorts between output pins or between output pins and the power supply and GND pins caused by the
presence of a foreign object may result in damage to the IC.
5) Actions in strong magnetic field
Use caution when using the IC in the presence of a strong magnetic field as doing so may cause the IC to malfunction.
6) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Ground the IC during assembly steps as an antistatic measure,
and use similar caution when transporting or storing the IC. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process.
7) Ground wiring patterns
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the application's reference point so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the
GND wiring patterns of any external components.
8) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of
parasitic elements.For example, when the resistors and transistors are connected to the pins as shown in Fig. 18, a
parasitic diode or a transistor operates by inversing the pin voltage and GND voltage.
The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result
of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC
malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will
trigger the operation of parasitic elements, such as the application of voltages lower than the GND (P board) voltage to
input and output pins.
Pin A
NN
P
Fig.18 Example of a Simple Monolithic IC Architecture
Resistor
N
~
~
P
Parasitic element
GND
Transistor (NPN)
B
C
Pin B
P+
P+
P+
NN
Parasitic elements
N
N
P substrate
~
E
~
P
GND
GND
P
+
Pin B
C
B
~
~
E
Pin A
GND
Parasitic elements
Parasitic element
GND
~
~
9) Overcurrent protection circuits
An overcurrent protection circuit designed according to the output current is incorporated for the prevention of IC
destruction that may result in the event of load shorting. This protection circuit is effective in preventing damage due to
sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous
operation or transitioning of the protection circuits. At the time of thermal designing, keep in mind that the current capability
has negative characteristics to temperatures.
10) Thermal shutdown circuit
This IC incorporates a built-in thermal shutdown circuit for the protection from thermal destruction. The IC should be used
within the specified power dissipation range. However, in the event that the IC continues to be operated in excess of its
power dissipation limits, the attendant rise in the chip's temperature Tj will trigger the thermal shutdown circuit to turn off
output p
ower elements. The circuit automatically resets once the chip's temperature Tj drops.
Operation of the thermal shutdown circuit presumes that the IC's absolute maximum ratings have been exceeded.
Application designs should never make use of the thermal shutdown circuit.
11) Testing on application boards
At the time of inspection of the installation boards, when the capacitor is connected to the pin with low impedance, be sure
to discharge electricity per process because it may load stresses to the IC. Always turn the IC's power supply off before
connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as
an antistatic measure, and use similar caution when transporting or storing the IC.
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