ROHM BD8163EFV Technical data

A
Power Supply ICs for TFT-LCD Panels
BD8163EFV
Description
The BD8163EFV is a system power supply IC for TFT panels. A 1-chip IC providing a total of four voltages required for TFT panels, i.e., logic voltage, sauce voltage, gate high-level, and gate low-level voltage, thus constructing a TFT panel power supply with minimal components required.
Features
1) Operates in an operating voltage range as low as 2.1 V to 6. 0 V.
2) Incorporates a step-up DC/DC converter.
3) Incorporates a 2.5 V regulator.
4) Incorporates positive and negative-side charge pumps.
5) Switching frequency of 1100 kHz
6) DC/DC converter feedback voltage of 1.24 V ± 1%
7) Incorporates a gate shading function
8) Under-voltage lockout protection circuit
9) Thermal shutdown circuit
10) Overcurrent protection circuit
11) HTSSOP-B24 package
Applications
Liquid crystal TV, PC monitor, and TFT-LCD panel
Absolute maximum ratings (Ta = 25℃)
Parameter Symbol Ratings Unit
No.10035EAT13
Power supply voltage VCC 7 V
Vo1 voltage Vo1 19 V
Vo2 voltage Vo2 32 V
SW voltage Vsw 19 V
Maximum junction temperature Tjmax 150
Power dissipation Pd 1100* mW
Operating temperature range Topr -40 to 125
Storage temperature range Tstg -55 to 150
* Reduced by 4.7 mW/ over 25, when mounted on a glass epoxy board. (70 mm 70 mm 1.6 mm).
Recommended Operating Ranges
Ratings
Parameter Symbol
Min. Max.
Power supply voltage VCC 2.1 6 V
Vo1 voltage Vo1 8 18 V
Vo2 voltage Vsw 18 V
SW Current Isw 1.8 A
Vo2 Current Vo2 30 V
Unit
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1/21
2010.12 - Rev.
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BD8163EFV
Electrical Characteristics (Unless otherwise specified, VCC = 5 V; Vo1 = 15 V; Vo2 = 25 V; Ta = 25℃)
1 DC/DC Converter Block
Limits
Parameter Symbol
Unit Conditions
Min. Typ. Max.
[Soft start]
Source current Iso 6 10 14 μA Vss = 0.5 V
Sinking current Isi 0.1 0.2 1.0 mA Vss = 0.5 V, VDD = 1.65 V
[Error amp]
Technical Note
Input bias current 1 I
Feedback voltage 1 V
— 0.1 0.5 μA
FB1
1.227 1.240 1.253 V Buffer
FB1
Voltage gain AV — 200 — V/V *
Sinking current IoI 25 50 100 μA VFB = 1.5 V VCOMP = 0.5 V
Source current Ioo -100 -50 -25 μA VFB = 1.0 V VCOMP = 0.5 V
[SW]
ON resistance N-channel R
Leak current N-channel I
Maximum duty cycle D
50 200 600 mΩ *
ON_N
— — 10 μA Vsw = 18 V
LEAKN
75 85 95 %
MAX
[Overcurrent protection]
Saw current limit Insw 2 3 A *
2. Regulator controller
Limits
Parameter Symbol
Unit Conditions
Min. Typ. Max.
[Error amp]
VDD voltage VDD 2.4 2.5 2.6 V
Maximum base current I
Line regulation RegI 10 30 mV Vcc = 4.5 V to 5.5 V
Load regulation RegL 10 50 mV Io = 10 mA to 100 mA
[Under-voltage lockout protection]
Off threshold voltage V
On threshold voltage V
This product is not designed for protection against radioactive rays. * Design guarantee (No total shipment inspection is made.)
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2 7 15 mA
BMAX
1.7 1.8 1.9 V
ROFF
1.6 1.7 1.8 V
RON
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BD8163EFV
3. Charge pump
Parameter Symbol
[Error amp]
Technical Note
Limits
Unit Conditions
Min. Typ. Max.
Input bias current 2 I
Input bias current 3 I
Feedback voltage 2 V
Feedback voltage 3 V
— 0.1 0.5 μA
FB2
— 0.1 0.5 μA
FB3
1.183 1.240 1.307 V
FB2
0.15 0.2 0.25 V
FB3
[Delay start block]
Source current I
Sinking current I
3 5 7 μA VDLS = 0.5V
DSO
0.1 0.5 1.0 mA VDLS = 0.5V
DSI
Startup voltage VST 0.45 0.60 0.75 V
[Switch]
ON resistance N-channel R
ON resistance P-channel R
0.5 2 4 Ω Io = 10 mA *
ON_NC
0.5 4 8 Ω Io = -10 mA *
ON_PC
[Diode]
Voltage of diode Vf
600 710 800
mV Io = 10 mA
[Gate shading block]
ON resistance N-channel R
ON resistance P-channel R
Leak current N-channel I
Leak current P-channel I
LEAK_NG
LEAK_PG
2 10 20 Ω Io = 10 mA *
ON_NGS
2 10 20 Ω Io = -10 mA *
ON_PGS
S — 10 μA
S — 10 μA
High voltage IGH VDD × 0.7 VDD V
Low voltage IGL 0 VDD × 0.3 V
Input current IIG 8 16.5 30 μA IG = 3.3 V
This product is not designed for protection against radioactive rays. * Design guarantee (No total shipment inspection is made.)
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3/21
2010.12 - Rev.
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BD8163EFV
4. Overall
Parameter Symbol
[Reference block]
Technical Note
Limits
Unit Conditions
Min. Typ. Max.
Reference voltage V
Drive current I
1.215 1.240 1.265 V
REF
23 mA VREF = 0 V
REF
Load regulation V 1 10 mV IREF = -1 mA
[Oscillator]
Oscillating frequency Fosc 0.94 1.1 1.265 MHz
[Oscillator]
DET 1 On threshold voltage V
DET 1 Off threshold voltage V
DET 2 On threshold voltage V
DET 2 Off threshold voltage V
DET 3 On threshold voltage V
1.7 1.8 1.9 V
DON1
1.6 1.7 1.8 V
DOFF1
1.02 1.12 1.22 V
DON2
0.90 1.00 1.10 V
DOFF2
0.25 0.30 0.35 V
DON3
DET 3 Off threshold voltage V
DET 4 On threshold voltage V
DET 4 Off threshold voltage V
0.35 0.41 0.47 V
DOFF3
1.02 1.12 1.22 V
DON4
0.90 1.00 1.10 V
DOFF4
[Device]
Average circuit current Icc 0.5 2 5 mA No switching
This product is not designed for protection against radioactive rays.
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4/21
2010.12 - Rev.
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BD8163EFV
Reference Data (Unless otherwise specified, Ta = 25)
1
0.8
0.6
0.4
0.2
SUPPLY CURRENT : ICC[mA] .
0
01.5 34.56
Fig. 1 Total Supply Current 1
125
25
-40
SUPPLY VOLTAGE : VCC [V]
10
8
6
4
2
SUPPLY CURRENT : IDD[mA] .
0
01.534.56
SUPPLY VOLTAGE : VD D[V]
Fig. 2 Total Supply Current 2
1.6
1.6
1.2
1.2
0.8
0.8
0.4
REF VO LTAGE : VREF [V]
0.4
REF VO LTAGE : VREF [V]
0
01.534.56
SUPPLY VOLT AGE : VCC[ V]
Fig. 4 Internal
Reference Line Regulation
12
10
8
6
0
0 5 10 15 20 25 30
REF CURRENT : IREF[mA]
Reference Load Regulation
2
1.5
1
4
2
DLS SOURCE CURRENT : IDLS[µA] .
0
01.534.56
SUPPLY VOLT AGE : VD D[V]
Fig. 7 DLS Source Current
0.5
0
SWITCHHING FREQUENCY : f [MHz] .
-50 - 25 0 25 50 75 100 125
-40
AMBIEN T T EMPER ATU RE : T a[
Fig. 8 Switching Frequency
200
160
120
80
40
SW VOLTAGE : VSW [V] .
0
0 0.2 0.4 0.6 0.8 1
SW CURRENT : ISW [A]
Fig. 10 SW On Resistance
200
160
120
80
40
OUTPUT VOLTAGE : Vcp[mV].
0
0 20 40 60
INPUT CURRENT : Icp[mA]
Fig. 11 Charge Pump
125
Fig. 5 Internal
Temperature
N channel
P channel
On Voltage
25
-40
80
Technical Note
1.26
1.25
1.24
1.23
REF VO LTAGE : VREF [V]
1.22
-50 - 25 0 25 50 75 100 125
AMBIENT TEM PERATU RE : Ta[℃]
Fig. 3 Internal Reference
Temperature
12
10
8
6
4
2
SS SOURCE CURRENT : ISS[µA] .
0
01.5 34.56
SUPPLY VOLT AGE : VDD[V]
Fig. 6 SS Source Current
5
4
3
2
VDD VOLTAGE : VDD[V]
1
0
0246810
]
GS VOLTAGE : Vgs[V]
100
BASE CURRENT : IBASE[mA]
Fig. 9 REG Current Capacity
1
0.8
0.6
N channel
0.4
0.2
0
0
20
GS CURRENT : Igs[mA]
P channel
40 60 80 100
Fig. 12 Gate Shading
On Voltage
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5/21
2010.12 - Rev.
A
BD8163EFV
Reference Data (Unless otherwise specified, Ta = 25)
15
10
5
OUT PUT VOLT AGE : VD D [V ]
0
01.534.56
SUPPLY VOLT AGE : VCC [ V]
Fig. 13 Vo1 Line Regulation
5
4
3
2
1
OUTPU T VOLTAGE : VDD[V]
0
0 0.4 0.8 1.2 1.6 2
OUTPUT CURRENT : IDD[mA]
Fig. 14 VDD Load Regulation
14
13
12
13V
12V
100
95
90
11
OUT PUT VOLT AGE : VO1[V]
10
0 100 200 300 400 500 600 700
Fig. 16 Vo1 Load Regulation
10.8V
OUTPUT CURRENT : IO[mA]
EFFICIENCY [ % ]
85
80
0 150 300 450 600
OUTPUT CURRENT : IO1[mA]
Fig. 17 Efficiency vs Output Current
1600
1200
23.8
23.7
800
23.6
400
MAXIMUM CURRENT : IoMAX[mA] .
0
1.5 3 4.5 6
SUPPLY VOLT AGE : VCC[ V]
23.5
OUT PUT VOLT AGE : VO2[V]
23.4 10 11.5 13 14.5 16
INPU T VOLTAGE : Vo1[v]
Fig. 19 Power Supply Voltage vs
Max. Output Current Capacity
Fig. 20 Vo2 Line Regulation Fig. 21 Vo2 Load Regulation
-6
-6
-6.1
-6.1
-6.2
-6.2
-6.3
OUT PUT VOLT AGE : VO3[V]
-6.4 10 11 12 13 14 15
INPU T VOLTAGE : VO 1[V]
Fig. 22 Negative-side Charge
Pump Line Regulation
-6.3
OUT PUT VOLT AGE : VO1[V]
-6.4 0 50 100 150 200
OUTPUT C UR RENT : IO[mA]
Fig. 23 Negative-side Charge
Pump Load Regulation
10.8V 12V 13V
Technical Note
12.5
12.4
12.3
12.2
12.1
12.0
11.9
11.8
Vo1 VOLT AGE : VO 1[V]
11.7
11.6
11.5 23 456
SUPPLY VOLT AGE : VCC[ V]
Fig. 15 Vo1 Line Regulation
100
90
80
EFFICIENCY [ % ]
70
60
2.5 3 3. 5 4 4. 5 5 5.5 6
SUPPLY VOLT AGE : VCC[ V]
Fig. 18 Efficiency vs Power
Supply Voltage
24
23.8
23.6
23.4
23.2
OUT PUT VOLTAGE : VO2[V]
23
0 50 100 150
OUTPUT CURRENT : IO2[mA]
IG
VO2GS
Fig. 24 Gate Shading
Output Waveform
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6/21
2010.12 - Rev.
A
BD8163EFV
Block Diagram
0.1µF
5.1k
1000pF
0.1µF
0.1µF
Ω
REF
COMP
DLS
Vcc
1µF
Technical Note
VREF
DET2
VCC
Regulator
Control
10µF
Step-up
Controller
Charge
Pump
Control 1
DET4
VDD
4.7µF
VCC
Vo1
Gate
Shading
Controller
Charge
Pump
Control 2
DET1
1.8V
VDD=2.5V
VCC 5V
SS
TSD
UVLO
Step-up
Controller
IG
BASE
Fig. 25 Block Diagram
PGND
DET4
PGND
Vo1
10µF
SW
Vo1
DET3
GND
DET2
1.1V
0.3V
GND
Vo1
1.1V
FB1
Vo2
C2H
C2L
C1H
C1L
FB2
Vo2GS
GSOUT
C3
0.1µF
FB3
10µF
0.1µF
0.1µF
160k
15kΩ
1µF
R
1µF
Ω
270k
Ω
16kΩ
0.01µF
91k
18kΩ
Vo1=14.5V (18V MAX)
Vo2 23.5V (30V MAX)
Vo2GS
Vo3=-5V
Ω
REF
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2010.12 - Rev.
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