ROHM BD6934FV Technical data

Power Management IC Series for Automotive Body Control
Antenna Driver
BD6934FV
Features
1)Pre-driver for driving MOS-FET
2)4MHz ceramic resonator or external pulse are available
3)Driving current adjustment function (Dependence on power supply voltage)
4)Stand-by current 0μA(typ.
5)Built-in the resistance between Gate to Source of FET
6)Built-in FET synchro on protect
7)Built-in thermal shutdown
8)Built-in under voltage lockout protection(UVLO)
Applications
Usable in driving low frequency , the likes of TPMS and smart entry system.
Absolute Maximum RatingsTa=25℃)
Parameter Symbol Rating Unit Supply voltage Vcc1,Vcc2 12 V Power dissipation Pd 562 mW Operating temperature range T Storage temperature range T Junction temperature T
Reduced by 4.496mW/,when mounted on a glass epoxy board (70mm×70mm×1.6mm)
Operating range
Supply voltage Vcc1,Vcc2 3.58 V RP,RN voltage Vrp,Vrn VCC2 V XOUT,RT,CT voltage Vxout,Vrt,Vct VCC1 V Input voltage VIN -0.3VCC1 V
*This product described in this specification isn’t judged whether it applies to COCOM regulations.
It should not be exported without authorization from the appropriate government.
*This product is not designed for protection against radioactive rays.
Status of this document
*
The Japanese version of this document is the formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document, formal version takes priority.
(Ta=25℃)
Parameter Symbol Operating range Unit
-40~85
opr
-55~150
stg
150
jmax
No.09039EBT03
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1/12
2009.09 - Rev.B
BD6934FV
●Electrical characteristics(Unless otherwise specified, VCC1=VCC2=3.5~8V,Ta=-40~85℃)
Technical Note
Parameter Symbol
Circuit current
VCC driv e cu rrent
VCC stand-by current Icc2 - - 10
Icc1 - 3.5 7
Min. Typ. Max.
Limit
[Output]
V
OHH OHL
V
OLH
OLL LH
I
LL
ON
D
ON ON
T
OSC
V
I
IH
IL
VCC-0.4 VCC-0. 2 - V I o=-5mAFig.33
-0.20.4V Io=5
VCC-0.4 VCC-0. 2 - V I o=-5mAFig.33
-0.20.4V Io=5
--10μA Vo=0V Fig.32
--10μAVo=12V Fig.32
3.5 6.84 9.17 11. 5 % VCC1=VCC2=3.5V Fig.34 4
13 15 17 % VCC1=VCC2=4V Fig.34
7 44 49 54 % VCC1=VCC2=7V Fi g.34
--8μsec * Fig.34
VCC*0.8 - - V Fig.33
IH
IL
- - 1.3 V Fig.34
10 - 150
--10μAVIN=0V Fig.32
2.7 3 3.3 V Fig.31
2.9 3.2 3.5 V Fig.31
0.63 0.7 0.77 V Fig.35 346 432 518 300 430 560
V
UVOFF
V
UVON
RT CTC CTD
Upper side output v oltage H
Upper side output v oltage L V L ower s ide output v oltage H
L ower si de output v oltage L V
Output leak current H I
Output leak current L
ON Duty 3.5V D
ON Duty 4V ON Duty 7V D
Oscillating st ar t time *
Input(IN,SEL
)]
Input voltage H
Input voltage L V Input current H
Input current L I
Under volt age lock out protection
UV LO ON v olt a ge V
UVLO OFF voltage
Trianglar wave generation
RT voltage
CT charge curr ent I
CT discharge cur r ent I
Unit
Conditions
Measurem ent
circuit
mA IN=High Fig.31
μ
A IN=Low Fig.32
AFig.33
AFig.33
μ
A V IN=VCC Fig.31
AVCT
μ
AVCT
μ
1.1V Fig.35
1.1V Fig.35
* Oscillating start timeTime till operating output, after UVLO turn off during oscillating ceramic resonator.
This product is not designed for protection against radioactive rays.
Dimension
Product No.
D6934
Lot No.
Fig.1 SSOP-B16 UNIT:mm
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© 2009 ROHM Co., Ltd. All rights reserved.
2/12
2009.09 - Rev.B
BD6934FV
Reference Data
5
4
3
2
ICC1[mA]
1
0
036912
VCC1,VCC2[V]
Fig.2 VCC drive current
0.0
-0.3
-0.6
V_OUTN(V)
-0.9
Ta=85
Ta=25
Ta=-40
Ta=-40
Ta=25
Ta=85
4.0
3.0
2.0
ICC2[μA]
1.0
0.0
Ta=-40
036912
Ta=25
Ta=85
VCC1,VCC2[V]
Fig.3 VCC stand-by current
1.2
0.9
0.6
V_OUTN[V]
0.3
Ta=85
T=a25
Ta=-40
Technical Note
0.0
-0.3
-0.6
-0.9
V_OUTN-VCC2[V]
-1.2
V_OUTN[V]
Ta=-40
Ta=25
Ta=85
0 5 10 15 20
I_OUTP[mA]
Fig.4 output voltage H (Vcc3.5V)
1.2
0.9
0.6
0.3
Ta=85
Ta=25
Ta=-40
-1.2 0 5 10 15 20
I_OUTP[mA]
Fig.5 output voltage H (Vcc8V)
4
3
2
I_OUTP[μA]
1
0
036912
Ta=85 Ta=25
Ta=-40
VCC1,VCC2[V]
Fig.8 Output leak current H
OUTP
OUTN
0.0 0 5 10 15 20
I_OUTN[mA]
Fig.6 output voltage L (Vcc3.5V)
4
3
2
I_OUTP[μA]
1
0
036912
Ta=85 Ta=25 Ta=-40
VCC1,VCC2[V]
Fig.9 Output leak current L
OUTP
OUTN
OUTP
OUTN
0.0 0 5 10 15 20
I_OUTN[mA]
Fig.7 output voltage L (Vcc8V)
Fig.10 ON Duty3.5V
0.8
0.6
From Left Ta=-40℃
Ta=25
0.4
V_RT[V]
0.2
Ta=85
Fig.11 ON Duty4V
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Fig.12 ON Duty7V
3/12
0.0
0.00.71.42.12.83.5
V_IN[V]
Fig.13 Input voltage H / L (Vcc3.5V)
2009.09 - Rev.B
BD6934FV
0.8
0.6
0.4
V_RT[V]
0.2
0.0
0.0 1.0 2.0 3.0 4.0
Fig.14 Input voltage H / L (Vcc4V)
4
3
2
I_IN[μA]
1
0
04812
Fig.17 Input current H
1.0
0.8
0.6
0.4
V_RT[V]
0.2
0.0 036912
From Left Ta=-40℃
Ta=25 Ta=85
V_IN[V]
Ta=85
VCC1,VCC2[V]
Ta=85
Ta=25
Ta=-40
VCC1 ,VCC2[V]
Fig.20 RT voltage
0.8
0.6
From Left Ta=-40℃
Ta=25 Ta=85
0.4
V_RT[V]
0.2
0.0
0.0 2.0 4.0 6.0
V_IN[V]
Fig.15 Input voltage H / L (Vcc7V)
200
150
Ta=85
100
I_IN[μA]
50
0
036912
Ta=25
Ta=-40
VCC1,VCC2[V]
Fig.18 Input current L
1000
500
I_CT[μA]
-500
-1000
From Left Ta=-40℃
Ta=25 Ta=85
0
0.00.30.60.91.21.5
V_CT[V]
Fig.21 CT charge-discharge current
Technical Note
0.8
0.6
From Left Ta=-40℃
Ta=25
0.4
V_RT[V]
0.2
0.0
0.02.04.06.08.0
Fig.16 Input voltage H / L (Vcc8V)
4.0
3.0
2.0
V_OUTP[V]
1.0
0.0 01234
Fig.19 UVLO ON/OFF voltage
Ta=85
V_IN[V]
From Left Ta=85℃
Ta=25 Ta=-40
VCC1,VCC2[V]
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4/12
2009.09 - Rev.B
BD6934FV
C
UVLO
C
ounter
Block diagram
CSTCR4M00G55B-R0
9
VCC1
On duty control / Synchro on protect
Technical Note
8
XOUT
10
CT
11
Counter
1000p
12
Triangle
Oscillator
4.8k
125kHz
1000p
SEL
13
IN 14
GND
PGND
16
XIN
XOUT
10
CT
11
RT
13
GND
PGND
100k
100k
VCC1
TSD
1M
Triangle
Oscillator
100k
VCC1
UVLO
TSD
Fig.22 Resonator mode
VCC1
VCC2
Function
Logic OUTP
VCC2
Function
Logic
OUTN
On duty control /
Synchro on protect
VCC2
Function
Logic
OUTP
VCC2
Function
Logic
OUTN
20k
20k
Fig.23 External pulse mode
* Product No.and constants of external devices are recommended condition.
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5/12
20k
.
N. 7
VCC1
6
VCC2 5
RP
OUTP
3
2
OUTN
1
RN 8
N.C. 7
VCC1
6
VCC2
5
4
OUTP
N.C.
2
OUTN
1
2009.09 - Rev.B
SP8M3
1u
SP8M3
BD6934FV
Pin name PIN NO. Pin name Function
1 OUTN Nch FET GATE connection 2 N.C. N.C. 3 OUTP Pch FET GATE connection 4 RP For pull-up resistance of Pch FET Gate 5 VCC2 Power VCC terminal 6 VCC1 Signal VCC terminal 7 N.C. N.C. 8 RN For pull – down resistance of Nch FET Gate
9 XIN Resonator connection 10 XOUT Resonator connection 11 CT Capacitor connection for triangular wave generation 12 RT Capacitor connection for triangular wave generation 13 SEL Input terminal for mode selection(Resonator mode:L,External pulse mode:H) 14 IN Input terminal (Stand-by:L, Enable:H) 15 GND Signal GND terminal 16 PGND Power GND terminal
I/O Circuit Diagram
Technical Note
VCC1
SEL
IN
XIN
GND
VCC1
GND GND GND
6.6K
100K
Fig.24 SEL(13pin) IN(14pin)
250
6K
4p
1M
VCC1
100
100
VCC1
3.3K
4p
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XOUT
VCC1
GND
GND
Fig.25 XIN(9pin) XOUT(10pin)
GND GND GND GND
6/12
2009.09 - Rev.B
BD6934FV
Technical Note
RT
CT
VCC1
GND
VCC1
VCC1
700
700 700
Fig.26 RT(12pin)
VCC1
GND
GND GND GND
Fig.27 CT(11pin)
VCC2
15
15
VCC2
OUTP OUTN
20k
Fig.28 OUTN(1pin) OUTP(3pin) RP(4pin) RN(8pin)
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7/12
PGND PGND
RP RN
PGND
2009.09 - Rev.B
BD6934FV
e
8
Truth table
Technical Note
Pin Name XIN IN SEL OUTP OUTP
Pin No. 9 14 13 3 1
Resonator
4MHz
External signal
125KHz
Timing chart
4MHz
XIN
Internal CLK
125kHz
CT
Input Output
4MHz L L Hiz Hiz
4MHz H L Enable Enable 125KHz L L Hiz Hiz 125KHz H H Enable Enable
H
L
period 8usec
Variation as to supply voltage
OUTP
OUTN
VCC
(=IN)
OUTP
H L
H L
V
7V
3.2V
3.0V 0V
ON time
Hi
Fig.29
Dead time
Timing chart(driving)
Enabl
Dead time
Hiz
8/12
Enable
Hiz
2009.09 - Rev.B
OUTN
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Hi
Fig.30
VCC-OUTP・OUTN Operating range
BD6934FV
p
Measurement circuit
Technical Note
A
4.8K
12
1000P
9
10 11
16
16
IIH
13 14 15
VIL
A
IIL
4.8K
12
13 14 15
BD6934FV
VCC
2 3 4 5 6 7 8
5K 5K
V
A
ICC1
VCC
BD6934FV
2 3 4 5 6 7 8
I
A A A
I
Vo
ILH
LH
I
LL
LL
Vo
Fig.31 ICC1,IIH,V
OVDN,VUVOFF
Fig.32 ICC2,ILH,ILL,IIL
16
VIH
1000P
4.8K
12
13 14 15
9
10 11
16
VIL
4.8K
12
13 14 15
1000P
10 11
Icc2
V
cc
1000P
ceramic rasonator
10 11
9
9
BD6934FV
BD6934FV
2 3 4 5 6 7 8
2 3 4 5 6 7 8
V
V
OLH
V
OLL
Fig.33 V
V
V
OHH
V
OHL
OHH,VOHL,VOLH,VOLL,VIH
VCC
Oscillo
DON
e
sco
T
OSC
Fig.34 DON3.5,DON4,DON7,T
VCC
OSC,VIL
16
V
VRT
4.8K
12
13 14 15
1000P
I
CTC
A
I
CTD
9
10 11
BD6934FV
2 3 4 5 6 7 8
Fig.35 V
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VCC
RT,ICTC,ICTD
9/12
2009.09 - Rev.B
BD6934FV
Operating explanation Driving current adjustment function.
This IC control the duty of output pulse in response to supply voltage(Vcc). This function is allowed to control driving current and adjust the arrival range of radio frequency. The relationship between supply voltage(Vcc) and output(OUTN) is as shown in the following figure. This data is typical , refer to the electrical characteristics in regard to variation.
Duty
(%)
49
Technical Note
External FET
Connect PchMOS to OUTP and Nch MOS to OUTN Vds>VCC, Vgs>VCC, Allowable current > Output current There is a possibility that upper and lower FET turn on at the same time. It is recommended to use 1000pF or smaller at input capacitor of external FET. However , these characteristics change in the layout pattern and parts variation and so on. Make evaluations with using board in mass production.
Oscillation precision and condition
The oscillation precision depends on the condition of ceramic resonator. This IC is evaluated with the ceramic resonator (Product No.CSTCR4M00G55B-R0) of MURATA manufacturing. In the range of Vcc 2.2~2.7V, this IC stops its oscillation without disenabling the ceramic resonator.
OPERATING NOTES
1) Absolute maximum ratings Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may result in IC damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when such damage is suffered. A physical safety measure such as a fuse should be implemented when use of the IC in a specialmode where the absolute maximum ratings may be exceeded is anticipated.
2) GND potential Ensure a minimum GND pin potential in all operating conditions.
3) Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
4) Pin short and mistake mounting Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improp er mounting may result in damage to the IC. Shorts between output pins and the power supply and GND pins caused by the presence of a foreign object may result in damage to the IC. Ensure a minimum GND pin potential in all operating conditions.
5) Actions in strong magnetic field Keep in mind that the IC may malfunction in strong magnetic fields.
15
9.17
3.5 4 7
Fig.36 Supply voltage (Vcc) - Output (OUTN) Duty
8
Vcc(v)
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2009.09 - Rev.B
BD6934FV
Technical Note
6) Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance su bjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure, and use similar caution when transporting or storing the IC.
7) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when the resistors and transistors are connected to the pins as sho wn in the following figure,
The P/N junction functions as a parasitic diode when GND > Pin A for the resistor or GND > Pin B for the transistor(NPN).
Similarly, when GND > Pin B for the transistor (NPN), the parasitic diode described above combines with the N layer of
other adjacent elements to operate as a parasitic NPN transistor. The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltages lower than the GND (P substrate) voltage to input pins. Keep in mind that the IC may malfunction in strong magnetic fields.
(Pin A)
P+
N
P
Resistor
N
P
GND
P+
N
Parasitic elements
(Pin B)
Parasitic elements or Transistors
C
P+
N
B
E
N
P
N
P substrate
GND
(Pin B)
C
B
E
GND
N
(Pin A)
Parasitic elements or
Parasitic elements
8) Ground patterns When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the application's reference point s o that the pattern wiring resistance and voltage variations c aused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external parts, either.
9) Thermal shutdown circuit (TSD) This IC incorporates a built-in TSD circuit for the protection from thermal destruction. T he IC should be used within the specified power dissipation range. However, in the event that the IC continues to be operated in excess of its power dissipation limits, the attendant rise in the junction temperature (Tj) will trigger the TSD circuit to turn off all output po wer elements. The circuit automatically resets once the junction temperature (Tj) drops. Operation of the TSD circuit presumes that the IC's absolute maximum ratings have been exceeded. Application designs should never make use of the TSD circuit.
10) External parts Driving current adjustment function in use low accuracy parts (Especially, RT terminal connection resistance, CT terminal connection capacitor and resonator ) may malfunction. The external parts use highly accuracy, and be careful additional impedance and capacitor for wiring pattern.
11)RP, RN terminal The resistance is built in between OUTP and RP, and OUTN and RN to turn off external MOS - FET in stand - by. Please wire with RP=VCC2 and RN =PGND. Improper wiring may result in damage for the penetration current.
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11/12
2009.09 - Rev.B
BD6934FV
Ordering part number
B D 6 9 3 4 F V - E 2
Part No. Part No.
SSOP-B16
5.0±0.2
16
9
4.4±0.2
6.4±0.3
1
8
0.3Min.
0.15±0.1
Package
FV: SSOP-B16
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction of feed
2500pcs E2
The direction is the 1pin of product is at the upper left when you hold
()
reel on the left hand and you pull out the tape on the right hand
Packaging and forming specification E2: Embossed tape and reel
Technical Note
1.15±0.1
0.10
0.65
0.22±0.1
0.1
Direction of feed
(Unit : mm)
Reel
1pin
Order quantity needs to be multiple of the minimum quantity.
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12/12
2009.09 - Rev.B
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specications, which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes effor ts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injur y, re or any other damage caused in the event of the failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing.
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