ROHM BD6529GUL Technical data
Power Management Switch ICs for PCs and Digital Consumer Products
Load Switch ICs
for Portable Equipment
BD6528HFV,BD6529GUL
●Description
Power switch for memory card Slot (BD6528HFV, BD6529GUL) is a high side switch IC having one circuit of N-channel
Power MOSFET. This switch IC achieves ON resistance of 100mΩ with BD6529GUL; and 110mΩ with BD6528HFV.
Operations from low input voltage (VIN≦2.7V) is possible; made for use of various switch applications. BD6524HFV is
available in a space-saving HVSOF6 package. BD6529GUL is available in a space-saving VCSP-6 package.
●Features
1) Single channel of Low On-Resistance (Typ. = 100mΩ) N-channel MOSFET built in
2) 500mA output current
3) Low voltage switch capability
4) Soft-start function
5) Output discharge circuit
6) Reverse current flow blocking at switch off
7) HVSOF6 package for BD6528HFV
VCSP50L1 package for BD6529GUL
●Applications
Memory card slots of Mobile phone, Digital still camera, PDA, MP3 player, PC, etc.
●Line up matrix
Part Number ON resistance Output current Discharge circuit Logic Control Input Package
BD6528HFV 110mΩ 500mA ○ High
BD6529GUL 100mΩ 500mA ○ High
●Absolute maximum ratings
No.11029ECT19
HVSOF6
1.6 x 3.0 mm
VCSP50L1
1.5 x 1.0 mm
Parameter Symbol Ratings Unit
Supply voltage VDD -0.3 ～ 6.0 V
VIN voltage VIN -0.3 ～ 6.0 V
EN voltage VEN -0.3 ～ VDD + 0.3 V
VOUT voltage VOUT -0.3 ～ 6.0 V
Storage temperature TSTG -55 ～ 150 ℃
Power dissipation Pd
*1 Mounted on 70mm * 70mm * 1.6mm Glass-epoxy PCB. Derating: 6.8mW /℃ at Ta > 25℃
*2 Mounted on 50mm * 58mm * 1.75mm Glass-epoxy PCB. Derating: 4.6mW / ℃ at Ta > 25℃
* This product is not designed for protection against radioactive rays.
* Operation is not guaranteed.
●Operating conditions
Parameter Symbol
Operating voltage VDD 2.7 3.3 4.5 V
Switch input voltage VIN 0 1.2 2.7 V
Operation temperature TOPR -25 25 85 ℃
Output current ILO 0 - 500 mA
849 *1 (BD6528HFV)
575 *2 (BD6529GUL)
Ratings
Min. Typ. Max.
mW
Unit
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© 2011 ROHM Co., Ltd. All rights reserved.
1/11
2011.05 - Rev.C
BD6528HFV,BD6529GUL
●Electrical characteristics
○BD6528HFV(unless otherwise specified, VDD =3.3V, VIN = 1.2V, Ta = 25℃)
Parameter Symbol
[Current consumption]
Operating current IDD - 20 30 µA VEN = 1.2V
Standby current ISTB - 0.01 1 µA VEN = 0V
[I/O]
EN input voltage
EN input current IEN -1 - 1 µA VEN = 0V or VEN = 1.2V
[Power switch]
On-resistance RON - 110 - mΩ IOUT = 500mA
Switch leakage current ILEAK - 0.01 10 µA VEN = 0V, VOUT = 0V
Output rise time TON1 - 0.5 1 ms RL = 10Ω, VOUT 10% → 90%
Output turn-on time TON2 - 0.6 2 ms RL = 10Ω, VEN High →VOUT 90%
Output fall time TOFF1 - 1 20 µs RL = 10Ω, VOUT 90% → 10%
Output turn-off time TOFF2 - 15 100 µs RL = 10Ω, VEN Low →VOUT 10%
[Discharge circuit]
Discharge on-resistance RDISC - 70 110 Ω IOUT = -1mA, VEN = 0V
Parameter IDISC - 15 20 mA VOUT = 3.3V, VEN = 0V
○BD6529GUL(unless otherwise specified, V
Parameter Symbol
[Current consumption]
Operating current IDD - 20 30 µA VEN = 1.2V
Standby current ISTB - 0.01 1 µA VEN = 0V
[I/O]
EN input voltage
EN input current IEN -1 - 1 µA VEN = 0V or VEN = 1.2V
[Power switch]
On Resistance RON - 100 - mΩ IOUT = 500mA
Switch leakage current ILEAK - 0.01 10 µA VEN = 0V, VOUT = 0V
Output turn on rise time TON1 - 0.5 1 ms RL = 10Ω, VOUT 10% → 90%
Output turn on time TON2 - 0.6 2 ms RL = 10Ω, VEN High →VOUT 90%
Output turn off fall time TOFF1 - 0.1 4 µs RL = 10Ω, VOUT 90% → 10%
Output turn off time TOFF2 - 1 6 µs RL = 10Ω, VEN Low →VOUT 10%
[Discharge circuit]
Discharge on-resistance RDISC - 70 110 Ω IOUT = -1mA, VEN = 0V
Discharge current IDISC - 15 20 mA VOUT = 3.3V, VEN = 0V
VENH 1.2 - - V High level input
VENL - - 0.4 V Low level input
VENH 1.2 - - V High level input
VENL - - 0.4 V Low level input
Min. Typ. Max.
DD =3.3V, VIN = 1.2V, Ta = 25℃)
Min. Typ. Max.
Limits
Limits
Unit Condition
Unit Condition
Technical Note
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© 2011 ROHM Co., Ltd. All rights reserved.
2/11
2011.05 - Rev.C
BD6528HFV,BD6529GUL
●Test circuit
●Switch output turn ON/OFF timing
VINVDDV
V
EN
V
OUT
EN
VIN
VDD
EN
VOUT
VOUT
GND
Fig.1 Measurement circuit
50% 50%
T
ON2
90%
10%
T
ON1
Fig.2 Timing diagrams
90%
T
RL
OFF2
10%
T
Technical Note
CL
OFF1
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© 2011 ROHM Co., Ltd. All rights reserved.
3/11
2011.05 - Rev.C
BD6528HFV,BD6529GUL
●Reference data
30
OPERATING CURRENT :
Ta= 2 5º C
25
20
[µA]
15
DD
I
10
5
0
23 45
SUPPLY VOLT AGE : V
[V]
DD
Fig.3 Operating current
EN enable
1.0
VDD=3.3V
0.8
0.6
[uA]
STB
I
0.4
STANDBY CURRENT :
0.2
0.0
-50 0 50 100
AMBIEN T T EMPER ATU RE : T a [°C]
Fig.6 Standby current
EN disable
200
ON RESISTANCE :
Ta= 2 5º C
V
=1.2V
IN
150
I
=100mA
OUT
]
Ω
[m
100
ON
R
50
0
23 45
SUPPLY VOLT AGE : V
[V]
DD
Fig.9 On-resistance vs. VDD
(BD6528HFV)
200.0
150.0
100.0
50.0
VDD=3.3V
V
=1.2V
IN
Ta= 8 5º C
Ta= 2 5º C
Ta= - 25 ºC
]
Ω
[m
ON
R
ON RESISTANCE :
0.0
0 200 400 600
OUTPUT CURRENT : I
OUT
[mA]
Fig.12 On-resistance vs. IOUT
(BD6528HFV)
30
VDD=3.3V
25
20
[μA]
15
DD
I
10
OPERATING CURRENT :
5
0
-50 0 50 100
AMBIENT TEMPER ATUR E : Ta [°C]
ON RESISTANCE :
Fig.4 Operating current
EN enable
2.0
Ta= 2 5º C
1.5
1.0
VEN [V]
0.5
ENABLE IN PUT VOLT AGE:
0.0
23 45
SUPPLY VOLT AGE : V
[V]
DD
Fig.7 EN input voltage
200
VDD=3.3V
V
=1.2V
IN
150
I
=100mA
OUT
]
Ω
[m
100
ON
R
50
0
-50 0 50 100
AMBIEN T T EMPER ATU RE : T a [°C]
Fig.10 On-resistance vs. temperature
(BD6528HFV)
200
Ta= 2 5º C
V
=1.2V
IN
150
I
=100mA
OUT
]
Ω
[m
100
ON
R
ON RESISTANCE :
50
0
2345
SUPPLY VOLT AGE : V
[V]
DD
Fig.13 On-resistance vs. V
(BD6529GUL)
DD
Technical Note
1.0
Ta= 2 5º C
0.8
0.6
[uA]
STB
I
0.4
STANDBY CURRENT :
0.2
0.0
2345
SUPPLY VOLT AGE : V
Fig.5 Standby current
EN disable
2.0
VDD=3.3V
1.5
[V]
1.0
EN
V
0.5
ENABLE INPU T VOLTAGE :
0.0
-50 0 50 100
AMBIENT TEM PERATU RE : Ta [°C ]
Fig.8 EN input voltage
200
VDD=3.3V
I
=100mA
OUT
150
Ta= 8 5º C
]
Ω
[m
100
Ta= 2 5º C
ON
R
ON R ESISTANC E :
Ta= - 25 ºC
50
0
0123
INPU T VOLTAGE : V
Fig.11 On-resistance vs. VIN
(BD6528HFV)
200
VDD=3.3V
V
=1.2V
IN
150
I
=100mA
OUT
]
Ω
[m
100
ON
R
ON RESISTANCE :
50
0
-50 0 50 100
AMBIENT TEM PERATUR E : Ta [°C]
Fig.14 On-resistance vs. temperature
(BD6529GUL)
[V]
DD
[V]
IN
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© 2011 ROHM Co., Ltd. All rights reserved.
4/11
2011.05 - Rev.C
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