ROHM BD6046GUL Technical data

Charge Protection IC Series with Built-in FET
Negative Voltage Protection type
Descriptions
BD6046GUL protects the devices from the abnormal input voltage at the USB port. Addition to the conventinal charge protection IC, it prevents the negative voltage happened by the USB reverse insertion without any additional compornents. ROHM's original charge protection IC series enables to protect the abnormal input voltage from -30V to +30V.
Features
1) Overvoltage Protection up to 28V
2) Negative Voltage Protection
3) Internal Low Ron (250mΩ) FET
4) Over voltage Lockout (OVLO)
5) Under voltage Lockout(UVLO)
6) Internal 2.5msec Startup Delay
7) Over Current Protect
8) Thermal Shut Down
9) Small package: VCSP50L2(2.5mm x 2.5mm, height=0.55mm)
Applications
Mobile phones, MP3 players, Digital Still Camera, PDA, IC recorder, Electronic Dictionary, Handheld Game, Game Controller, Camcorder, Bluetooth Headsets, etc
Absolute maximum ratings (Ta=25℃)
No.09031EAT02
Parameter Symbol Rating Unit Conditions
Input supply voltage 1 Vmax1 -3030 V IN Input supply voltage 2 Vmax2 -0.37 V other
Power dissipation Pd 975 mW Operating temperature range Topr -40~+85 Storage temperature range Tstr -55~+150
When using more than at Ta=25℃, it is reduced 7.8mW per 1℃.(ROHM specification board 50mm× 58mm mounting.)
Recommended operating range (Ta=-40~+85℃)
Parameter Symbol Range Unit Usage
Input voltage range
This product is not especially designed to be protected from radioactivity.
Vin 2.228 V
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© 2009 ROHM Co., Ltd. All rights reserved.
1/7
2009.05 - Rev.A
BD6046GUL
Technical Note
Electrical Characteristics
(Unless otherwise noted, Ta = 25C, IN=5V)
Parameter Symbol
Min. Typ. Max.
Rating
Unit Conditions
Electrical
Input Voltage Range VIN - - 28 V
Supply Quiescent Current ICC 35 70 μA
Under Voltage Lockout UVLO 3.42 3.6 3.78 V IN=decreasing
Under Voltage Lockout Hysteresis UVLOh 50 100 150 mV IN=increasing
Over Voltage Lockout OVLO 6.5 6.7 6.9 V IN=increasing
Over Voltage Lockout Hysteresis OVLOh 50 100 150 mV IN=decreasing
Current limit ILM 1.2 - - A
Vin vs. Vout Res. RON - 250 300 m
FLGB Output Low Voltage FLGBVO - - 400 mV SINK=1mA
FLGB Leakage Current FLGBleak - - 1 μA
Timings (Flgb pull up resistance 100kΩ)
Start Up Delay Ton - 2.5 5 msec
Output Turn Off Time Toff - 2 10 μsec
Alert Delay Tovp - 1.5 10 μsec
* This product is not especially designed to be protected from radioactivity.
Block Diagram
Travel
Adapter
IN
IN
IN
IN IN IN IN
OUT
OUT
OUT
CHARGER
OUT
FLGB
PIN number / PIN name
A3, A4,B3, B4,C4, D3,D4 IN
NVP
GND
Gate
Driver
Initial Delay
VREF
UVLO
OVLO
OCP
TSD
OSC
Initial Delay
Timing
Generator
Fig. 1 Block Diagram
Pin number Pin name
A1, B1,C1, D1 OUT
D2 GND
A2 FLGB
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© 2009 ROHM Co., Ltd. All rights reserved.
2/7
2009.05 - Rev.A
BD6046GUL
A
A
Package Dimensions
Ball Configuration
PIN DESCRIPTIONS
OUT
OUT
B
C
OUT
OUT
D
1 2 3
BD6046
Top View
FLGB
index
GND
IN
IN
IN
Lot No.
Fig. 2 Package Dimensions (VCSP50L2)
Bottom View
IN
IN
IN
IN
4
Fig. 3 Ball Configuration
D
OUT
C
OUT
B
OUT
OUT
123
GND
index
FLGB
IN
IN
IN
Technical Note
IN
IN
IN
IN
4
PIN NAME FUNCTION
A3, A4, B3, B4, C4, D3, D4 IN
A1, B1, C1, D1 OUT Output Voltage Pin
A2 FLGB
D2 GND Ground Pin
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
Input voltage Pin. A 1F low ESR capacitor, or larger must be connected between this pin and GND
Open-drain output pin that turns low when any protection event occurs. (overvoltage protection, thermal shut down)
3/7
2009.05 - Rev.A
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