ROHM’s BD48xxx and BD49xxx series are highly
accurate, low-current Voltage Detector IC series. The
family includes BD48xxx devices with N-channel open
drain output and BD49xxx devices with CMOS output.
The devices are available for specific detection voltages
ranging from 2.3V to 6.0V in increments of 0.1V.
●Features
High accuracy detection
Ultra-low current consumption
Two output types (Nch open drain and CMOS output)
Wide Operating temperature range
Very small and low height package
Package SSOP5 is similar to SOT-23-5 (JEDEC)
Package SSOP3 is similar to SOT-23-3 (JEDEC)
●Key Specifications
Detection voltage: 2.3V to 6.0V (Typ.),
0.1V steps
High accuracy detection voltage: ±1.0%
Ultra-low current consumption: 0.9µA (Typ.)
Operating temperature range: -40°C to +105°C
●Package
SSOP5: 2.90mm x 2.80mm x 1.25mm
SSOP3: 2.92mm x 2.80mm x 1.25mm
VSOF5: 1.60 mm x 1.60mm x 0.60mm
●Applications
Circuits using microcontrollers or logic circuits that
require a reset.
●Typical Application Circuit
V
BD48xxx
(Open Drain Output type)
BD48xxx series
RL
R
L
C
(
noise filtering
Micro
controller
)
DD2
V
GND
GND
Micro
BD49xxx
(CMOS Output type)
BD49xxx series
CL
(
RST
)
○Product structure:Silicon monolithic integrated circuit ○This product is not designed for protection against radioactive rays
.
●Lineup
Table 1. Lineup for VSOF5 and SSOP5 Package
Package Type
Output Type Open Drain CMOS Open Drain CMOS
VSOF5 or SSOP5 SSOP5
Voltage
6.0V
5.9V
5.8V
5.7V
5.6V
5.5V
5.4V
5.3V
5.2V
5.1V
5.0V
4.9V
4.8V
4.7V
4.6V
4.5V
4.4V
4.3V
4.2V
4.1V
4.0V
3.9V
3.8V
3.7V
3.6V
3.5V
3.4V
3.3V
3.2V
3.1V
3.0V
2.9V
2.8V
2.7V
2.6V
2.5V
2.4V
2.3V
Marking
EW BD4860 GW BD4960 Cm BD48E60 Ff BD49E60
EV BD4859 GV BD4959 Ck BD48E59 Fe BD49E59
EU BD4858 GU BD4958 Ch BD48E58 Fd BD49E58
ET BD4857 GT BD4957 Cg BD48E57 Fc BD49E57
ES BD4856 GS BD4956 Cf BD48E56 Fb BD49E56
ER BD4855 GR BD4955 Ce BD48E55 Fa BD49E55
EQ BD4854 GQ BD4954 Cd BD48E54 Ey BD49E54
EP BD4853 GP BD4953 Cc BD48E53 Er BD49E53
EN BD4852 GN BD4952 Cb BD48E52 Ep BD49E52
EM BD4851 GM BD4951 Ca BD48E51 En BD49E51
EL BD4850 GL BD4950 By BD48E50 Em BD49E50
EK BD4849 GK BD4949 Br BD48E49 Ek BD49E49
EJ BD4848 GJ BD4948 Bp BD48E48 Eh BD49E48
EH BD4847 GH BD4947 Bn BD48E47 Eg BD49E47
EG BD4846 GG BD4946 Bm BD48E46 Ef BD49E46
EF BD4845 GF BD4945 Bk BD48E45 Ee BD49E45
EE BD4844 GE BD4944 Bh BD48E44 Ed BD49E44
ED BD4843 GD BD4943 Bg BD48E43 Ec BD49E43
EC BD4842 GC BD4942 Bf BD48E42 Eb BD49E42
EB BD4841 GB BD4941 Be BD48E41 Ea BD49E41
EA BD4840 GA BD4940 Bd BD48E40 Dy BD49E40
DV BD4839 FV BD4939 Bc BD48E39 Dr BD49E39
DU BD4838 FU BD4938 Bb BD48E38 Dp BD49E38
DT BD4837 FT BD4937 Ba BD48E37 Dn BD49E37
DS BD4836 FS BD4936 Ay BD48E36 Dm BD49E36
DR BD4835 FR BD4935 Ar BD48E35 Dk BD49E35
DQ BD4834 FQ BD4934 Ap BD48E34 Dh BD49E34
DP BD4833 FP BD4933 An BD48E33 Dg BD49E33
DN BD4832 FN BD4932 Am BD48E32 Df BD49E32
DM BD4831 FM BD4931 Ak BD48E31 De BD49E31
DL BD4830 FL BD4930 Ah BD48E30 Dd BD49E30
DK BD4829 FK BD4929 Ag BD48E29 Dc BD49E29
DJ BD4828 FJ BD4928 Af BD48E28 Db BD49E28
DH BD4827 FH BD4927 Ae BD48E27 Da BD49E27
DG BD4826 FG BD4926 Ad BD48E26 Cy BD49E26
DF BD4825 FF BD4925 Ac BD48E25 Cr BD49E25
DE BD4824 FE BD4924 Ab BD48E24 Cp BD49E24
DD BD4823 FD BD4923 Aa BD48E23 Cn BD49E23
Power Supply Voltage VDD-GND -0.3 to +10 V
Output Voltage
Nch Open Drain Output
CMOS Output GND-0.3 to VDD+0.3
V
OUT
Output Current Io 70 mA
*1*4
*2*4
*3*4
Pd
Power
Dissipation
SSOP5
VSOF5
Operating Temperature Topr -40 to +105 °C
Ambient Storage Temperature Tstg -55 to +125 °C
*1 Reduced by 5.4mW/°C when used over 25°C.
*2 Reduced by 7.0mW/°C when used over 25°C.
*3 Reduced by 2.1mW/°C when used over 25°C.
*4 When mounted on ROHM standard circuit board (70mm×70mm×1.6mm, glass epoxy board).
●Electrical Characteristics (Unless Otherwise Specified, Ta=-40 to 105°C)
Parameter Symbol Condition
RL=470kΩ, VDD=HL
*1
Ta=+25°C2.475 2.5 2.525
VDET=2.5V
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C2.970 3.0 3.030
VDET=3.0V
Ta=-40°C to 85°C
Ta=85°C to 105°C
Detection Voltage V
DET
VDET=3.3V
Ta=+25°C3.267 3.3 3.333
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C4.158 4.2 4.242
VDET=4.2V
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C4.752 4.8 4.848
VOL≤0.4V, Ta=25 to 105°C, RL=470kΩ0.95 - VOL≤0.4V, Ta=-40 to 25°C, RL=470kΩ1.20 - -
-0.2V *1
*1
+2.0V
V
=2.3-3.1V - 0.51 1.53
DET
V
=3.2-4.2V - 0.56 1.68
DET
V
=4.3-5.2V - 0.60 1.80
DET
V
=5.3-6.0V - 0.66 1.98
DET
V
=2.3-3.1V - 0.75 2.25
DET
V
=3.2-4.2V - 0.80 2.40
DET
V
=4.3-5.2V - 0.85 2.55
DET
V
=5.3-6.0V - 0.90 2.70
DET
*2
RL:Pull-up resistor to be connected between VOUT and power supply.
CL:Capacitor to be connected between VOUT and GND.
Design Guarantee. (Outgoing inspection is not done on all products.)
*1 Guaranteed at Ta=25°C.
RL:Pull-up resistor to be connected between VOUT and power supply.
CL:Capacitor to be connected between VOUT and GND.
Design Guarantee. (Outgoing inspection is not done on all products.)
*1 Guaranteed at Ta=25°C.
Limit
×0.05 V
DET
×0.08 V
DET
Unit
V
V VDD=6.0V,ISOURCE=0.9mA,VDET(4.3V to 5.2V) VDD-0.5 - -
For both the open drain type (Fig.12) and the CMOS output type (Fig.13), the detection and release voltages are used as
threshold voltages. When the voltage applied to the VDD pins reaches the appropriate threshold voltage, the V
OUT
voltage switches from either “High” to “Low” or from “Low” to “High”. Please refer to the Timing Waveform and Electrical
Characteristics for information on hysteresis.
Because the BD48xxx series uses an open drain output type, it is necessary to connect a pull-up resistor to VDD or another
power supply if needed [The output “High” voltage (V
) in this case becomes VDD or the voltage of the other power
OUT
supply].
V
DD
R1
R2
R3
Q1
R
L
V
OUT
GND
R1
R2
R3
Q2
Q1
Fig.12 (BD48xxx series Internal Block Diagram) Fig.13 (BD49xxx series Internal Block Diagram)
Reference Data
Examples of Leading (t
Part Number t
) and Falling (t
PLH
) Output
PHL
(µs) t
PLH
PHL
(µs)
BD48x45 39.5 87.8
BD49x45 32.4 52.4
VDD=4.3V5.1V VDD=5.1V4.3V
*These data are for reference only.
The figures will vary with the application, so please check actual operating conditions before use.
Timing Waveform
Example: the following shows the relationship between the input voltages VDD and the output voltage V
when the
OUT
input power supply voltage VDD swept up and down (the circuits are those in Fig.12 and 13).
When the power supply is turned on, the output is unstable
V
DD
VDET+ΔVDET
V
OUT
0V
VOH
VOL
VDET
VOPL
tPHL
tPLH
tPHL
①
③
Fig.14 Timing Waveform
⑤
tPLH
from after over the operating limit voltage (VOPL) until tPHL.
Therefore it is possible that the reset signal is not outputted when
the rise time of VDD is faster than tPHL.
When VDD is greater than V
voltage (V
If VDD exceeds the reset release voltage (V
V
switches from L to H.
OUT
If VDD drops below the detection voltage (V
DET
+ ∆V
), the output voltages will switch to Low.
DET
but less than the reset release
OPL
+ ∆V
DET
) when the power
DET
supply is powered down or when there is a power supply
fluctuation, V
The potential difference between the detection voltage and the
switches to L (with a delay of t
OUT
PHL
).
release voltage is known as the hysteresis width (∆V
system is designed such that the output does not toggle with
power supply fluctuations within this hysteresis width, preventing
malfunctions due to noise.
1) Examples of a common power supply detection reset circuit.
DD1
L
R
BD48xxx
C
L
(
Micro
ST
R
)
DD2
GND
Application examples of BD48xxx series (Open Drain
output type) and BD49xxx series (CMOS output type)
are shown on the left.
CASE1: Power supply of the microcontroller (V
differs from the power supply of the reset detection IC
(V
).
DD1
Use an open drain output type (BD48xxx) device with a
load resistance RL attached as shown in figure 15.
CASE2: Power supply of the microcontroller (V
Fig.15 Open Drain Output Type
same as the power supply of the reset detection IC
(V
).
DD1
Use a CMOS output type (BD49xxx) device or an open
DD1
V
drain device with a pull up resistor between output and
VDD1.
When a capacitance CL for noise filtering is connected to
the V
pin (the reset signal input terminal of the
OUT
BD49xxx
Micro
ST
R
microcontroller), please take into account the rise and
GND
C
L
(
filtering
fall waveform of the output voltage (V
)
The Electrical characteristics were measured using
OUT
).
RL= 470kΩ and CL = 100pF.
Fig.16 CMOS Output Type
2) The following is an example of a circuit application in which an OR connection between two types of detection voltage
resets the microcontroller.
VDD2VDD1VDD3
BD48xxx
BD48xxx
Microcontroller
RST
Fig.17
GND
To reset the microcontroller when many independent power supplies are used in the system, OR connect an open drain
output type (BD48xxx series) to the microcontroller’s input with pull-up resistor to the supply voltage of the microcontroller
) as shown in Fig. 17. By pulling-up to V
(V
DD3
, output “High” voltage of micro-controller power supply is possible.
3) Examples of the power supply with resistor dividers
In applications wherein the power supply voltage of an IC comes from a resistor divider circuit, an in-rush current will flow
into the circuit when the output level switches from “High” to “Low” or vice versa. In-rush current is a sudden surge of
current that flows from the power supply (VDD) to ground (GND) as the output logic changes its state. This current flow
may cause malfunction in the systems operation such as output oscillations, etc.
I1
CIN
VDD
BD48xxx
BD49xxx
VOUT
CL
GND
Fig.18
When an in-rush current (I1) flows into the circuit (Refer to Fig. 18) at the time when output switches from “Low” to “High”,
a voltage drop of I1×R2 (input resistor) will occur in the circuit causing the VDD supply voltage to decrease. When the
VDD voltage drops below the detection voltage, the output will switch from “High” to “Low”. While the output voltage is at
“Low” condition, in-rush current will stop flowing and the voltage drop will be reduced. As a result, the output voltage will
switches again from “Low” to “High” which causes an in-rush current and a voltage drop. This operation repeats and will
result to oscillation.
Fig.19 Current Consumption vs. Power Supply Voltage
14/15
TSZ02201-0R7R0G300030-1-
Datasheet
BD48xxx series BD49xxx series
2
22.May.2013.Rev.008
www.rohm.com
●Operational Notes
1) Absolute maximum ratings
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit
between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such
as adding a fuse, in case the IC is operated over the absolute maximum ratings.
2) Ground Voltage
The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no
pins are at a voltage below the ground pin at any time, even during transient condition.
3) Recommended operating conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
4) Bypass Capacitor for Noise Rejection
To help reject noise, put a 1µF capacitor between V
Be careful when using extremely big capacitor as transient response will be affected.
5) Short between pins and mounting errors
Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong
orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins.
6) Operation under strong electromagnetic field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
7) The VDD line impedance might cause oscillation because of the detection current.
8) A VDD to GND capacitor (as close connection as possible) should be used in high VDD line impedance condition.
9) Lower than the mininum input voltage puts the VOUT in high impedance state, and it must be VDD in pull up (VDD)
condition.
10) External parameters
The recommended parameter range for R
characteristics. Please verify and confirm using practical applications.
11) Power on reset operation
Please note that the power on reset output varies with the VDD rise time. Please verify the behavior in the actual
operation.
12) Testing on application boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
13) Rush current
When power is first supplied to the IC, rush current may flow instantaneously. It is possible that the charge current to
the parasitic capacitance of internal photo diode or the internal logic may be unstable. Therefore, give special
consideration to power coupling capacitance, power wiring, width of GND wiring, and routing of connections.
14) This IC has extremely high impedance terminals. Small leak current due to the uncleanness of PCB surface might
cause unexpected operations. Application values in these conditions should be selected carefully. If 10M
assumed between the CT terminal and the GND terminal, 1M connection between the CT terminal and the VDD
terminal would be recommended. Also, if the leakage is assumed between the Vout terminal and the GND terminal, the
pull up resistor should be less than 1/10 of the assumed leak resistance.
is 10k to 1M. There are many factors (board layout, etc) that can affect
L
DD pin and GND and 1000pF capacitor between VOUT pin and GND.
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
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damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ
CLASSⅣ CLASSⅢ
CLASSⅢ
CLASSⅡb
CLASSⅢ
(Note 1)
, transport
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H
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For details, please refer to ROHM Mounting specification
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