PNP small signal transistor
BCX71H
Features Dimensions (Unit : mm)
1) Ideal for switching and AF amplifier applications.
2) Complements the BCX70.
Packaging specifications
Type
BCX70H
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
∗
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
−45 V
−45
−5
−0.2
0.2
0.35
150
−55 to 150
Electrical characteristics (Ta=25C)
V
V
A
W
W
°C
°C
BCX71H
2.9
0.4
(3)
(2)
(1)
0.95
0.95
1.9
(1)Emitter
(2)Base
(3)Collector
Abbreviated symbol : GBH
∗
0.95
0.45
0.2Min.
2.4
1.3
0.15
Each lead has same dimensions
Parameter Symbol
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter cutoff current
Emitter-base cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Noise figure
Collector-base cutoff current
Typ. Max. Unit Conditions
Min.
BV
CEO
BV
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
BE(sat)2
V
V
EBO
I
CES
I
EBO
BE(on)
h
FE
f
T
−45
−5
−0.6
140
80 −−
−
−
−
−
−0.1
−
−
−0.1
−
−
−
−
−
−
−
−
−
−
−
180
−0.25
−0.55
−0.85
−1.05
−0.75
310
Cob −−6V
NF −−6V
I
CBO
−
−20
−
−
−
−
VI
V
I
V
μ
A
V
μ
A
I
I
V
I
I
V
V
−
V
V
MHz
μ
A
V
C
= −2mA
C
= −10μA
CE
= −45V
EB
= −4V
C/IB
= −10mA/ −0.25mAV
C/IB
= −50mA/ −1.25mA
C/IB
= −10mA/ −0.25mAV
C/IB
= −50mA/ −1.25mAV
CE
= −5V, IC= −2mAV
CE
= −5V, IC= −2mA
CE
= −5V, IC= −50mA
CE
= −5V, IE= −10mA, f=100MHz
CB
= −10V, f=1MHzpF
CE
= −5V, IC= −200μA, f=1kHz,Rg=2kΩdB
CB
= −45V, Ta=150
°C
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c
○
2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.11 - Rev.B
VCE=-5V
Ta=125ºC
75ºC
25ºC
-55ºC
IB=-50uA
IB=0A
Ta=25 ºC
Ta=25 ºC
VCE=-5V
3V
-1V
Ta=25 ºC
IC/IB=40/1
20/1
10/1
VCE=-5V
Ta=125ºC
75ºC
25ºC
-55ºC
IC/IB=40/1
Ta=125ºC
75ºC
25ºC
-55ºC
IC/IB=40/1
Ta=-5 5ºC
25ºC
75ºC
125ºC
BCX71H
Electrical characteristics
-100
)Am(
C
I : TNERRUC ROTCELLOC
-10
-1
-100
-80
)Am(
C
I : TNERRUC ROTC
-60
-40
E
LLOC
-20
IB=-500uA
-450uA
-400uA
IB=-350uA
IB=-300uA
IB=-250uA
IB=-200uA
IB=-150uA
IB=-100uA
h : NIAG TNERRUC CD
1000
EF
100
Data Sheet
-
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1 -1.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig1. Grounded Emitter Propagation
Characteristics
1000
EF
h : NIAG TNERRUC CD
100
10
-1 -10 -100 -1000
COLLECTOR CURRENT : IC (mA)
Fig4. DC Current Gain vs.
Collector Current (II)
-10
)t
a
s(EB
V :
E
GAT
LO
V
)V(
N
-1
OITA
R
UTAS
ESAB
-0.1
-1 -10 -100
COLLECTOR CURRENT : IC (mA)
Fig7. Base Satura tion Voltage
vs. Collector Current
0
0 -1-2-3-4-5-6-7-8-9-10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig2. Grounded Emitter Outpu t
Characteristics
-1
)tas(EC
V : EGATLOV NOITARUTAS ROTCELLOC
-0.1
)V(
-0.01
-0.1 -1 -10 -100 -1000
COLLECTOR CURRENT : IC (mA)
Fig5. Collector Saturation Voltage
vs. Collector Current (I)
1000
)z
H
500
M
(
T
f
:
YC
N
E
200
UQ
ERF NOI
100
T
ISNART
50
12 510
EMITTER CURRENT : I
Fig.8 Gain bandwidth product vs.
emitter current
Ta=25˚C
V
E
(
mA)
10
-1 -10 -100 -1000
COLLECTOR CURRENT : IC (mA)
Fig3. DC Current Gain vs.
Collector Current (I)
1
)tas(EC
V : EGATLOV NOITARUTAS ROTCELLOC
0.1
)V(
0.01
-0.1 -1 -10 -100 -1000
COLLECTOR CURRENT : IC (mA)
Fig6. Collector Saturation Voltage
vs. Collector Current (II)
20
)Fp
CE
= −
12V
50 1000.5 20
)Fp
( boC
( biC : ECNATICAPAC TUPNI RETTIME
10
: ECNATICAPAC TUPTUO
5
2
R
OTCELL
−0.5 −20
O
COLLECTOR TO BASE VOLTAGE : VCB (V)
C
EMITTER TO BASE VOLTAGE : V
Fig.9
biC
boC
−1 −2 −5 −10
Collector output capacitance vs.
Ta=25˚C
f=1MHz
I
E
=
0A
I
C
=
0A
EB
(V)
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
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c
○
2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.11 - Rev.B
Notes
Notice
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