ROHM BCX70J, BCX70K Schematic [ru]
Transistors
NPN small signal transistor
BCX70J, K
zFeatures zDimensions (Unit : mm)
1) Ideal for switching and AF amplifi er applications.
2) Complements the BCX71.
zPackaging specifications
Type
BCX71J, K
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
∗
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
C
I
P
C
Tj
Tstg
45 V
45
5
0.2
0.2
0.35
150
−55 to 150
BCX70J,K
(1)Emitter
(2)Base
(3)Collector
V
V
A
W
W
°C
°C
2.9
0.4
(3)
(2)
(1)
0.95
0.95
1.9
Abbreviated symbol : GAJ (BCX70J)
∗
BCX70J, K
0.95
0.45
0.2Min.
2.4
1.3
0.15
Each lead has same dimensions
GAK (BCX70K)
1/2
Transistors
T
.
zElectrical characteristics (T a=25°C)
Typ. Max. Unit Conditions
Parameter Symbol
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter cutoff current
Emitter-base cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
BV
BV
CE(sat)1
V
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
I
I
DC current transfer ratio
Transition frequency
Collector output capacitance
Cob −−4.5 V
Noise figure
Collector-base cutoff current
ICBO
his parts are classified into the categories below and given hFE item
Part. No BCX70J
FE1
FE2
250 to 460
90 or more
h
h
BCX70K
380 to 630
125 or more
Min.
CEO
45
EBO
5
CES
EBO
−
−
−
−
−
−
BE(on)
0.55
h
FE1
250
h
FE2
90 −−
f
T
125
NF −−6V
−
BCX70J, K
C
−
−
−
−
0.1
0.1
20
µA
µA
MHz
−
µA
−
−
0.35
−
0.55
−
0.85
−
1.05
−
0.75
−
−
630
−
−
= 2mA
VI
C
= 10µA
V
I
V
CE
EB
V
I
C/IB
C/IB
I
V
I
C/IB
I
C/IB
V
CE
CE
V
−
CE
V
V
CE
CB
CE
V
CB
= 45V
= 4V
= 10mA/ 0.25mAV
= 50mA/ 1.25mA
= 10mA/ 0.25mAV
= 50mA/ 1.25mAV
= 5V, IC= 2mAV
= 5V, IC= 2mA
= 5V, IC= 50mA
= 5V, IE= 10mA, f=100MHz
= 10V, f=1MHz, IE=0ApF
= 5V, IC= 200µA, f=1kHz,Rg=2kΩdB
= 45V, Ta=150°C
2/2
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