ROHM BCX19 Technical data
NPN small signal transistor
BCX19
Features Dimensions (Unit : mm)
(1) High gain and low saturation voltage.
(2) Complements the BCX17.
Packaging specifications
Type
BCX19
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
Absolute maximum ratings (Ta=25C)
Parameter
Collector-emitter voltage (VBE=0)
Collector-emitter voltage (open base)
Emitter-base voltage
Collector current
Collector current (peak value)
Collector power dissipation
Junction temperature
Storage temperature
Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
∗
2
Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE
∗
Symbol Limits Unit
CES
V
V
CEO
V
EBO
C
I
I
CM
P
C
Tj
Tstg
Electrical characteristics (Ta=25C)
Parameter Symbol
CES
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cutoff current
Emitter-base cutoff current
Collector-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Transition frequency
Collector-base cutoff current
BV
BV
BV
I
I
V
CE(sat)
V
I
CEO
EBO
CBO
EBO
BE(on)
h
FE
f
T
CBO
50 V
45
5
0.5
1
0.2
0.35
0.425 W
150
−65 to 150
Min.
Typ. Max. Unit Conditions
50
45
100
70
40 −− VCE= 1V, IC= 500mA
5
−
−
−
−
−
−
−
−
−
−
0.1
−
0.62
−
1.2
−
−
600
−−
250
−
10
−
−
−
−
5
BCX19
(1)Emitter
(2)Base
(3)Collector
V
V
A
A
W
W
°C
°C
VI
V
V
μA
μA
V
−
MHz
μA
Abbreviated symbol : GU1
∗
∗2
C
= 50μA
C
= 10mA
I
I
E
= 50μA
CB
= 20V
V
EB
= 5V
V
I
C/IB
= 500mA/ 50mA
CE
= 1V, IC= 500mAV
V
V
CE
= 1V, IC= 100mA
V
CE
= 1V, IC= 300mA
V
CE
= 5V, IE= 20mA, f=100MHz
V
CB
= 20V, Ta=150°C
0.95
2.9
0.4
(3)
(2)
(1)
0.95
1.9
0.95
0.45
0.2Min.
2.4
1.3
0.15
Each lead has same dimensions
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○
2011 ROHM Co., Ltd. All rights reserved.
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2011.09 - Rev.B
BCX19
Absolute maximum ratings (Ta=25C)
=400uAIB=450uAIB=500uA
I
1000
VCE=1V
(mA)
C
100
Ta=125ºC
75ºC
25ºC
-55ºC
10
COLLE CTOR CUR REN T : I
1
0 0.2 0.4 0.6 0.8 1 1.2
BASE T O EMITT ER VOLTAGE : VBE(V)
Fi g1. Gr ounded Emi tter P ropag ati on
Char acter ist ics
1000
VCE=1V
FE
100
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
0
0 0.4 0.8 1.2 1.6 2
COLLE CTOR TO EM ITTER VOLT AGE : VCE(V)
Fi g2. Gr ounded Emi tter O utput
Char acter ist ics
1
(V)
CE(sat)
Ta= 25ºC
B
IB=350uA
IB=300uA
IB=250uA
IB=200uA
IB=150uA
IB=100uA
IB=50uA
IB=0A
Ta=25ºC
1000
FE
100
DC CURRENT GAIN : h
10
1
(V)
CE(sat)
Data Sheet
Ta= 25ºC
VCE=5V
3V
1V
1 10 100 1000
COLLECTOR CURRENT : IC(mA)
Fig3. DC Current Gain vs.
Collector Current (I)
IC/IB=10/1
100
Ta= 125ºC
75ºC
25ºC
DC CURRENT GAIN : h
-55º C
10
1 10 100 1000
COLLECTOR CURRENT : IC(mA)
Fig4. DC Current Gain vs.
Col l ector C ur r ent ( II)
50
20
10
5
0.1 0.2 0.5
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : V
Fig.7 Input-and-output capacity
vs.voltage characteristic
Ta=25 C
f=1MHz
E
=0A
Cib
Cob
12 510
I
EB
(V)
IC/IB=50/1
0.1
0.01
COLLECT OR SATU RATION VOLTAGE : V
20/1
10/1
1 10 100 1000
COLLECTOR CURRENT : IC(mA)
Fig 5. Collector Saturati on Voltage
vs. Collector Curr ent (I)
COLLECT OR SATUR ATION VOLTAGE : V
Ta=125ºC
0.1
0.01
75ºC
25ºC
-55ºC
1 10 100 1000
COLLECTOR CURRENT : IC(mA)
Fig 6. Collector Satur ation Voltage
vs. Collector Curr ent (II)
Ta=25 C
500
)
Z
(MH
T
200
TRANSITION
FREQUENCY : f
100
20
-
1
-2-5-10-20-
EMITTER CURRENT : IE (mA)
Fig.8 Transition frequency
vs.emitter current
VCE=6V
50
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c
○
2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.09 - Rev.B
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