ROHM BC858B, BC858BW Technical data

BC858BW / BC858B

.0

.0

Transistors

PNP General Purpose Transistor

BC858BW / BC858B

zFeatures

1) BV

CEO

< -30V (IC=-1mA)

2) Complements the BC848B / BC848BW.

zPackage, marking and packaging specifications

Paet No.

Pakaging type

Marking

Code

Basic ordering unit (pieces)

BC858BW

UMT3

G3K
T106
3000

BC858B

SST3

G3K

T116

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power dissipation
Junction temperature

Storage temperature

∗

When mounted on 7 × 5 × 0.6 mm ceramic board.

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

Tj

Tstg

C

Limits

−30

−30

−5

−0.1

0.2

0.35
150

−65 to +150

Unit

V
V
V
A

∗

W

˚C
˚C

zElectrical characteristics (Ta=25°C)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage

Collector cutoff current

Collector-emitter saturation voltage V
Base-emitter saturation voltage V

Transition frequency
Output capacitance

Parameter Symbol Min. Typ. Max. Unit Conditions

BV

CBO

−30
BV
BV

I

CBO

CE(sat)

BE(on)

Cob

−30

CEO

−5

EBO

FE

f

T

−−

−

−−−0.3 V IC/IB= −10mA/−0.5mA

−−−0.65 V I

−0.6 −−0.75 V
210 − 480 −

−−250

−

−

−

−

−

4.5−−

−100

−

−

−

4

zElectrical characteristics curves

100

(mA)

C

COLLECTOR CURRENT : I

0.7

Ta=25˚C

0.5

0.6

80

0.4

60

0.3

40

0.2

20

0

0

COLLECTOR-EMITTER VOLTAGE : V

0.1

IB=0mA

1.0

Fig.1 Grounded emitter output

characteristics ( I )

10.0

8.0

(mA)

C

6.0

4.0

2.0

COLLECTOR CURRENT : I

2

CE

(

V)

0

0

COLLECTOR-EMITTER VOLTAGE : VCE

Fig.2 Grounded emitter output
characteristics ( II )

Rev.A 1/4

zExternal dimensions (Unit : mm)

BC858BW

2.0±0.2

1.3±0.1

0.65 0.65
(2)(1)

(3)

ROHM : UMT3
EIAJ : EC-70

BC858B

ROHM : SST3

All terminals have same dimensions

2.9±0.2

1.9±0.2

0.95

0.95

(2)

(1)

All terminals have same dimensions

I

V

C

= −50µA

V

I

C

= −1mA

V

I

E

= −50µA

VCB= −30V

nA
µA

V

CB

MHzpFV

50

C/IB

CE/IC

V
V

CE/IC
CE
CB

V

= −30V, Ta=150

= −100mA/−5mA

= −5V , IE=20mA , f=100MHz
= −10V , IE=0 , f=1MHz

Ta=25˚C

= −5V/−10mA
= −5V/−2mADC current transfer ratio h

°C

45

40

35

30

25

20

15

10

5

1B=0µA

1.0

2

(V)

0.9±0.1

0.7±0.1

0.2

0.1

0.1

±

±

2.1

1.2

+0.1

0.3

0

-

0.2

±

- 0.1

+0.2

1.3

2.4

(3)

+0.1

0.4

−0.05

0.15±0.05

+0.1

0.15

−0.06

0.95

+0.2

−0.1

0.45±0.1

00.1

0~0.1

0.2Min.

0.1~0.4

(1) Emitter
(2) Base
(3) Collector

(1) Emitter
(2) Base
(3) Collector

Transistors

0

0

0

500

FE

100

DC CURRENT GAIN : h

10

5

0.1 101.0 100 100
COLLECTOR CURRENT : IC(mA)

VCE=10V

5V

1V

Fig.3 DC current gain vs. collector current ( I )

500

FE

100

Ta=125˚C

Ta=25˚C

Ta=-55˚C

Ta=25˚C

VCE=5V

BC858BW / BC858B

DC CURRENT GAIN : h

10

5

0.1 101.0 100 100

Fig.4 DC current gain vs. collector current ( II )

COLLECTOR CURRENT : I

C

(mA)

500

FE

100

AC CURRENT GAIN : h

10

5

0.01 1.00.1 10 10
COLLECTOR CURRENT : I

C

(mA)

Fig.5 AC current gain vs. collector current

Ta=25˚C
V

CE

=5V

f=1kHz

Rev.A 2/4