BC858BW / BC858B
.0
.0
Transistors
PNP General Purpose Transistor
BC858BW / BC858B
zFeatures
1) BV
CEO
< -30V (IC=-1mA)
2) Complements the BC848B / BC848BW.
zPackage, marking and packaging specifications
Paet No.
Pakaging type
Marking
Code
Basic ordering unit (pieces)
BC858BW
UMT3
G3K
T106
3000
BC858B
SST3
G3K
T116
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
When mounted on 7 × 5 × 0.6 mm ceramic board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
Tj
Tstg
C
Limits
−30
−30
−5
−0.1
0.2
0.35
150
−65 to +150
Unit
V
V
V
A
∗
W
˚C
˚C
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency
Output capacitance
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
−30
BV
BV
I
CBO
CE(sat)
BE(on)
Cob
−30
CEO
−5
EBO
FE
f
T
−−
−
−−−0.3 V IC/IB= −10mA/−0.5mA
−−−0.65 V I
−0.6 −−0.75 V
210 − 480 −
−−250
−
−
−
−
−
4.5−−
−100
−
−
−
4
zElectrical characteristics curves
100
(mA)
C
COLLECTOR CURRENT : I
0.7
Ta=25˚C
0.5
0.6
80
0.4
60
0.3
40
0.2
20
0
0
COLLECTOR-EMITTER VOLTAGE : V
0.1
IB=0mA
1.0
Fig.1 Grounded emitter output
characteristics ( I )
10.0
8.0
(mA)
C
6.0
4.0
2.0
COLLECTOR CURRENT : I
2
CE
(
V)
0
0
COLLECTOR-EMITTER VOLTAGE : VCE
Fig.2 Grounded emitter output
characteristics ( II )
Rev.A 1/4
zExternal dimensions (Unit : mm)
BC858BW
2.0±0.2
1.3±0.1
0.65 0.65
(2)(1)
(3)
ROHM : UMT3
EIAJ : EC-70
BC858B
ROHM : SST3
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(1)
All terminals have same dimensions
I
V
C
= −50µA
V
I
C
= −1mA
V
I
E
= −50µA
VCB= −30V
nA
µA
V
CB
MHzpFV
50
C/IB
CE/IC
V
V
CE/IC
CE
CB
V
= −30V, Ta=150
= −100mA/−5mA
= −5V , IE=20mA , f=100MHz
= −10V , IE=0 , f=1MHz
Ta=25˚C
= −5V/−10mA
= −5V/−2mADC current transfer ratio h
°C
45
40
35
30
25
20
15
10
5
1B=0µA
1.0
2
(V)
0.9±0.1
0.7±0.1
0.2
0.1
0.1
±
±
2.1
1.2
+0.1
0.3
0
-
0.2
±
- 0.1
+0.2
1.3
2.4
(3)
+0.1
0.4
−0.05
0.15±0.05
+0.1
0.15
−0.06
0.95
+0.2
−0.1
0.45±0.1
00.1
0~0.1
0.2Min.
0.1~0.4
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
Transistors
0
0
0
500
FE
100
DC CURRENT GAIN : h
10
5
0.1 101.0 100 100
COLLECTOR CURRENT : IC(mA)
VCE=10V
5V
1V
Fig.3 DC current gain vs. collector current ( I )
500
FE
100
Ta=125˚C
Ta=25˚C
Ta=-55˚C
Ta=25˚C
VCE=5V
BC858BW / BC858B
DC CURRENT GAIN : h
10
5
0.1 101.0 100 100
Fig.4 DC current gain vs. collector current ( II )
COLLECTOR CURRENT : I
C
(mA)
500
FE
100
AC CURRENT GAIN : h
10
5
0.01 1.00.1 10 10
COLLECTOR CURRENT : I
C
(mA)
Fig.5 AC current gain vs. collector current
Ta=25˚C
V
CE
=5V
f=1kHz
Rev.A 2/4
Transistors
0
)
0
)
0
n
0
nt
0
t
0
t
0
t
0
0
(V
CE(sat)
0.3
0.2
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
0.1 1.0 10 10
COLLECTOR CURRENT : I
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta=25˚C
C
/
IB=10
I
C
(mA)
1000
(ns)
on
100
TURN ON TIME : t
15V
VCC=3V
40V
Ta=25˚C
C
/
IB=10
I
1.8
(V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1 1.0 10 10
BASE EMITTER SATURATION VOLTAGE : VBE(sat)
COLLECTOR CURRENT : I
Fig.7 Base-emitter saturation voltage
vs. collector current
1000
(ns)
r
100
RISE TIME : t
Ta=25
I
C
/
C
(mA)
Ta=25˚C
V
CC
=40V
C
/
IB=10
I
IB=10
BC858BW / BC858B
1.8
˚C
1.6
(V)
1.4
BE(ON)
1.2
1.0
0.8
0.6
0.4
0.2
BASE EMITTER VOLTAGE : V
0
0.1 1.0 10 10
COLLECTOR CURRENT : I
C
Ta=25˚C
V
CE
=10V
(mA)
Fig.8 Grounded emitter propagatio
characteristics
1000
(ns)
S
100
STORAGE TIME : t
15V
VCE=3V
40V
Ta=25˚C
IC=10IB1=10I
B2
10
1.0
COLLECTOR CURRENT : I
10 10
C
(mA)
Fig.9 Turn-on time vs. collector curre
10
1.0
COLLECTOR CURRENT : I
10 10
C
(mA)
Fig.10 Rise time vs. collector curren
10
1.0
COLLECTOR CURRENT : IC(mA)
10 10
Fig.11 Storage time vs. collector curren
1000
(ns)
100
FALL TIME : tf
10
1.0
COLLECTOR CURRENT : IC
Ta=25˚C
V
CC
=40V
C
=10IB1=10I
I
10 10
(mA)
Fig.12 Fall time vs. collector curren
100
B2
Ta=25˚C
f=1MHz
pF)
10
CAPACITANCE (
1
0.5
Cib
Cob
1105
REVERSE BIAS VOLTAGE
(V)
Fig.13 Input/output capacitance
vs. voltage
50
(V)
CE
100MHz
200MHz
10
1.0
COLLECTOR-EMITTER VOLTAGE : V
0.5
0.5
COLLECTOR CURRENT : I
300MHz
101 100 50
200MHz
Ta=25˚C
300MHz
100MHz
C
(mA)
Fig.14 Gain bandwidth product
Rev.A 3/4
Transistors
0
0
0
)
k
0
)
0
)
0
)
0
)
1000
(MHz)
T
100
10
CURRENT GAIN-BANDWIDTH PRODUCT : f
0.5 1
COLLECTOR CURRENT : I
10
Ta=25˚C
V
100
C
(mA)
CE
Fig.15 Gain bandwidth product
vs. collector current
=5V
100
10
hie
hre
1
hoe
h-PARAMETERS NORMALIZED TO 1mA
0.1
50
0.1
COLLECTOR CURRENT : I
Fig.16 h parameter vs.
collector current
10
9
8
(dB)
7
6
5
4
3
NOISE FIGURE : NF
2
1
0
10 1k100 10k 100
Fig.18 Noise vs. collector curren
FREQUENCY : f(Hz)
t
100k
(Ω)
S
10k
NF=1dB
3dB
5dB
Ta=25˚C
V
f=30Hz
8dB
CE
12dB
=5V
100k
(Ω)
S
10k
Ta=25˚C
V
CE=5V
f=1kHz
Ta=25°C
V
CE
=6V
f=270Hz
hoe
hfe
11010
Ta=25˚C
V
CE
=5V
C
=100µA
I
R
S
=10kΩ
hre
IC=1mA
hie=8.75kΩ
hfe=270
hre=6.25×10
hoe=17.7µS
C
(mA)
(A
CBO
5
-
COLLECTOR CUTOFF CURRENT : I
100k
(Ω)
S
10k
1k
SOURCE RESISTANCE : R
100
0.01
12dB
NF=1dB
3dB
8dB
5dB
BC858BW / BC858B
10n
V
CB
=
30V
1n
100p
10p
1p
0.1p
0
AMBIENT TEMPERATURE : Ta
Fig.17 Noise characteristics ( I )
NF=1dB
COLLECTOR CURRENT : I
Fig.19
Noise characteristics ( II
100k
Ta=25˚C
(Ω)
S
V
CE
=5V
f=10kHz
10k
7525 50 100 125 15
3dB
0.1 1 1
1dB
5dB
8dB
Ta=25˚C
V
CE
f=10Hz
12dB
C
(mA)
8dB
3dB
(°C)
=5V
NF=12dB
5dB
1k
SOURCE RESISTANCE : R
100
0.01
Fig.20
0.1 1 1
COLLECTOR CURRENT : I
Noise characteristics ( III
C
(mA)
1k
SOURCE RESISTANCE : R
100
0.01
Fig.21
0.1 1 1
COLLECTOR CURRENT : I
Noise characteristics ( IV
C
(mA)
1k
SOURCE RESISTANCE : R
100
0.01
Fig. 22
0.1 1 1
COLLECTOR CURRENT : I
Noise characteristics ( V
C
(mA)
Rev.A 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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