ROHM BC857B Technical data
PNP small signal transistor
BC857B
Features Dimensions (Unit : mm)
1) Ideal for switching and AF amplifier applications.
2) High current gain.
Packaging specifications
Type
BC857B
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
∗
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
C
I
P
C
Tj
Tstg
−65 to 150
Electrical characteristics (Ta=25C)
CEO
CBO
EBO
CBO
BE(on)
h
FE
f
T
CBO
Min.
−45
−50
−5
−
−
−
−0.6
210 − 480
−
−−4.5
−
Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-base cutoff current
Collector-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Transition frequency
Collector outpu capacitance
Collector-base cutoff current
BV
BV
BV
V
CE(sat1)
V
CE(sat2)
V
Cob
I
I
−50 V
−45
−5
−0.1
0.20
0.35
150
W
W
°C
V
V
A
∗
°C
Typ. Max. Unit Conditions
−
−
−
−
−
−
−
250
−
−
−
−
−0.015
−0.3
−0.65
−0.75
−
−4
MHz
C
VI
V
C
I
V
E
I
μA
V
I
V
C/IB
I
C/IB
V
V
−
V
V
V
V
μA
BC857B
(1)Emitter
(2)Base
(3)Collector
Abbreviated symbol : G3F
= −1mA
= −50μA
= −50μA
CB
= −30V
= −10mA/ −0.5mA
= −100mA/ −5mAV
CE
= −5V, IC= −10mA
CE
= 5V, IC= −2mA
CE
= −5V, IE= 20mA, f=100MHz
CB
= −10V, f=1MHzpF
CB
= −30V
0.95
2.9
0.4
(3)
(2)
(1)
0.95
1.9
0.95
0.45
0.2Min.
2.4
1.3
0.15
Each lead has same dimensions
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2011 ROHM Co., Ltd. All rights reserved.
2011.11 - Rev.B
VCE=-5V
Ta=125ºC
75ºC
25ºC
-55ºC
IB=-50uA
IB=0A
IB=-100uA
IB=-150uA
IB=-200uA
IB=-250uA
IB=-500uA
450uA
400uA
350uA
-300uA
IC/IB=20/1
Ta=125ºC
75ºC
25ºC
-55ºC
VCE=-5V
Ta=125ºC
75ºC
25ºC
-55ºC
Ta=25 ºC
IC/IB=50/1
20/1
10/1
Ta=25 ºC
VCE=-5V
3V
-1V
IB=-20uA
IB=0A
IB=-25uA
IB=-30uA
IB=-35uA
IB=-50uA
IB=-45uA
IB=-40uA
IB=-15uA
IB=-10uA
IB=-5uA
Electrical characteristics curves
-100
)Am(
C
I : TNERRUC ROTCELLOC
-10
-120
)
Am(
-100
C
I : TNERRUC ROTCELLOC
-80
-60
Data Sheet BC857B
-15
)Am(
C
I : TNERRUC ROTCELLOC
-10
Ta=25 ºC
-
-
-
-1
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1 -1.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig 1. Grounded Emitter Propagation
Characteristics
1000
EF
h : NIAG TNERRUC CD
100
10
-0.1 -1 -10 -100
COLLECTOR CURRENT : IC (mA)
Fig 4. DC Current Gain vs.
Collector Current (I)
-1
: EGATLOV NOITAR
)V(
)tas(EC
-0.1
UTA
V
S
ROTCELLOC
-40
-5
-20
0
0-2-4-6-8-10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig 2. Grounded Emitter Output
Characteristics (I)
1000
EF
h : NIAG TNERRUC CD
-
100
Ta=25 ºC
0
0 -0.4 -0.8 -1.2 -1.6 -2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig 3. Grounded Emitter Output
Characteristics (II)
-1
: EGATLOV NOITARUTAS ROTCELLOC
)V(
)tas(EC
-0.1
V
10
-0.1 -1 -10 -100
COLLECTOR CURRENT : IC (mA)
Fig 5. DC Current Gain vs.
Collector Current (II)
1000
500
MHz)
(
T
200
100
Ta=25°C
V
CE
= −12V
-0.01
-0.1 -1 -10 -100
COLLECTOR CURRENT : IC (mA)
Fig 6. Collector Saturation Voltage
vs. Collector Current (I)
20
pF)
pF)
10
5
2
Cib
Cob
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
50
-0.01
-0.1 -1 -10 -100
COLLECTOR CURRENT : IC (mA)
Fig 7. Collector Saturation Voltage
vs. Collector Current (II)
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2011 ROHM Co., Ltd. All rights reserved.
TRANSITION FREQUENCY : f
12 510
50 1000.5 20
EMITTER CURRENT : I
Fig.8 Gain bandwidth product vs.
emitter current
E
(
mA)
−0.5 −20
−1 −2 −5 −10
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
EMITTER TO BASE VOLTAGE : V
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
2011.11 - Rev.B
EB
(V)
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