ROHM BC848BW, BC848B Technical data

BC848BW / BC848B

)

Transistors

NPN General Purpose Transistor

BC848BW / BC848B

zFeatures

1) BV

CEO

minimum is 30V (IC=1mA)

2) Complements the BC858B / BC858BW.

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

CBO

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power
dissipation

BC848BW

BC848B
Junction temperature
Storage temperature

∗ When mounted on a 7×5×0.6mm ceramic board.

V
V

CEO

V

EBO

I

P

Tj

Tstg

C

C

Limits

30
30

5

0.1

0.2

0.2

0.35
150

−65~+150

Unit

V
V
V
A

W
W
W

°C
°C

zElectrical characteristics (Ta=25°C)

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage

Collector cutoff current

Collector-emitter saturation voltage
Base-emitter saturation voltage

DC current transfer ratio
Transition frequency
Collector output capacitance
Collector output capacitance

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

V

CE(sat)

V

BE(on)

h

FE

f

T

Cob

Cib

Min.

30
30

5

−

−

−

−

0.58
200

−

−

−

Typ.

Rev.A 1/5

zExternal dimensions (Unit : mm)

BC848BW

ROHM : UMT3
EIAJ : SC-70

BC848B, BC848C

(1)

ROHM : SST3

∗

Max.

Unit

V

−

−

−

−

−

−

−

−

−

200

3
8

−

−

−

100

5

0.25

0.6

0.77
450

−

−

−

IC=50µA

V

I

C

=1mA

V

I

E

=50µA

nA

CB

=30V

V

µA

V

CB

=30V, Ta=150°C

C/IB

=10mA/0.5mA

I

V

C/IB

=100mA/5mA

I

V

CE/IC

=5V/10mA

V

−

VCE/IC=5V/2mA

MHz

CE

=5V, IE=−20mA, f=100MHz

V

pF

V

CB

=10V, IE=0, f=1MHz

pF

VEB=0.5V, IE=0, f=1MHz

2.0±0.2

1.3±0.1

0.65 0.65
(2)(1)

0.1

0.1

±

±

2.1

1.25

(3)

+0.1

0.3

−0

All terminals have same dimensions

2.9±0.2

1.9±0.2

0.95

0.95

(2)

(3)

+0.1

0.4

−0.05

All terminals have same dimensions

0.15±0.05

0.2

0.1

0.2

−

+

±

1.3

2.4

0.15

Conditions

0.9±0.1

0.7±0.1

0.2

0.95

0.45±0.1

+0.1

−0.06

(SPEC-C22

0~0.1

(1) Emitter

0.1~0.4

(2) Base
(3) Collector

+0.2

−0.1

0~0.1

0.2Min.

(1) Emitter
(2) Base
(3) Collector

Transistors

.0

.0

0

0

zPackaging specifications

Part No.

Packaging type

Marking

Code

Basic ordering unit (pieces)

BC848BW

UMT3

zElectrical characteristic curves

100

Ta=25°C

80

60

40

20

−COLLECTOR CURRENT (mA)

C

I

0

0

VCE−COLLECTOR-EMITTER VOLTAGE (V)

1.2

1.0

0.8

0.6

0.4

0.2

0.1

IB=0mA

1.0

Fig.1 Grounded emitter output

characteristics ( )

1000

G1K
T106
3000

2

BC848B

SST3

G1K

T116

3000

10.0

8.0

6.0

4.0

2.0

-COLLECTOR CURRENT (mA)

C

I

0

0

VCE-COLLECTOR-EMITTER VOLTAGE (V)

Fig.2 Grounded emitter output

35
30

25

20

15

10

5

IB=0µA

1.0

characteristics ( )

Ta=25°C

BC848BW / BC848B

Ta=25°C

2

VCE=10V

5V

100

-DC CURRENT GAIN

FE

h

10

0.1 101.0 100 100
IC-COLLECTOR CURRENT (mA)

Fig.3 DC current gain vs. collector current ( )

1V

1000

Ta=125°C

Ta=25°C

100

-DC CURRENT GAIN

FE

h

10

0.1 101.0 100 100

Ta=−55°C

IC-COLLECTOR CURRENT (mA)

Fig.4 DC current gain vs. collector current ( )

VCE=5V

Rev.A 2/5