ROHM BC848BW, BC848B Technical data
BC848BW / BC848B
)
Transistors
NPN General Purpose Transistor
BC848BW / BC848B
zFeatures
1) BV
CEO
minimum is 30V (IC=1mA)
2) Complements the BC858B / BC858BW.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
CBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
BC848BW
BC848B
Junction temperature
Storage temperature
∗ When mounted on a 7×5×0.6mm ceramic board.
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
Limits
30
30
5
0.1
0.2
0.2
0.35
150
−65~+150
Unit
V
V
V
A
W
W
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Collector output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
CE(sat)
V
BE(on)
h
FE
f
T
Cob
Cib
Min.
30
30
5
−
−
−
−
0.58
200
−
−
−
Typ.
Rev.A 1/5
zExternal dimensions (Unit : mm)
BC848BW
ROHM : UMT3
EIAJ : SC-70
BC848B, BC848C
(1)
ROHM : SST3
∗
Max.
Unit
V
−
−
−
−
−
−
−
−
−
200
3
8
−
−
−
100
5
0.25
0.6
0.77
450
−
−
−
IC=50µA
V
I
C
=1mA
V
I
E
=50µA
nA
CB
=30V
V
µA
V
CB
=30V, Ta=150°C
C/IB
=10mA/0.5mA
I
V
C/IB
=100mA/5mA
I
V
CE/IC
=5V/10mA
V
−
VCE/IC=5V/2mA
MHz
CE
=5V, IE=−20mA, f=100MHz
V
pF
V
CB
=10V, IE=0, f=1MHz
pF
VEB=0.5V, IE=0, f=1MHz
2.0±0.2
1.3±0.1
0.65 0.65
(2)(1)
0.1
0.1
±
±
2.1
1.25
(3)
+0.1
0.3
−0
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(3)
+0.1
0.4
−0.05
All terminals have same dimensions
0.15±0.05
0.2
0.1
0.2
−
+
±
1.3
2.4
0.15
Conditions
0.9±0.1
0.7±0.1
0.2
0.95
0.45±0.1
+0.1
−0.06
(SPEC-C22
0~0.1
(1) Emitter
0.1~0.4
(2) Base
(3) Collector
+0.2
−0.1
0~0.1
0.2Min.
(1) Emitter
(2) Base
(3) Collector
Transistors
.0
.0
0
0
zPackaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
BC848BW
UMT3
zElectrical characteristic curves
100
Ta=25°C
80
60
40
20
−COLLECTOR CURRENT (mA)
C
I
0
0
VCE−COLLECTOR-EMITTER VOLTAGE (V)
1.2
1.0
0.8
0.6
0.4
0.2
0.1
IB=0mA
1.0
Fig.1 Grounded emitter output
characteristics ( )
1000
G1K
T106
3000
2
BC848B
SST3
G1K
T116
3000
10.0
8.0
6.0
4.0
2.0
-COLLECTOR CURRENT (mA)
C
I
0
0
VCE-COLLECTOR-EMITTER VOLTAGE (V)
Fig.2 Grounded emitter output
35
30
25
20
15
10
5
IB=0µA
1.0
characteristics ( )
Ta=25°C
BC848BW / BC848B
Ta=25°C
2
VCE=10V
5V
100
-DC CURRENT GAIN
FE
h
10
0.1 101.0 100 100
IC-COLLECTOR CURRENT (mA)
Fig.3 DC current gain vs. collector current ( )
1V
1000
Ta=125°C
Ta=25°C
100
-DC CURRENT GAIN
FE
h
10
0.1 101.0 100 100
Ta=−55°C
IC-COLLECTOR CURRENT (mA)
Fig.4 DC current gain vs. collector current ( )
VCE=5V
Rev.A 2/5
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