ROHM BC546, BC549 Technical data
查询BC546A供应商
BC 546 ... BC 549 General Purpose Transistors
NPN Si-Epitaxial PlanarTransistors NPN
Power dissipation – Verlustleistung 500 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Maximum ratings (T
= 25/C) Grenzwerte (TA = 25/C)
A
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Collector-Emitter-voltage B open V
Collector-Emitter-voltage B shorted V
Collector-Base-voltage E open V
Emitter-Base-voltage C open V
Power dissipation – Verlustleistung P
Collector current – Kollektorstrom (DC) I
Peak Coll. current – Kollektor-Spitzenstrom I
Peak Base current – Basis-Spitzenstrom I
Peak Emitter current – Emitter-Spitzenstrom - I
Junction temp. – Sperrschichttemperatur T
Storage temperature – Lagerungstemperatur T
C
CM
BM
CE0
CES
CB0
EB0
tot
j
S
EM
BC 546 BC 547 BC 548/549
65 V 45 V 30 V
85 V 50 V 30 V
80 V 50 V 30 V
6 V 6 V 5 V
500 mW 1)
100 mA
200 mA
200 mA
200 mA
150/C
- 65…+ 150/C
Characteristics, Tj = 25/C Kennwerte, Tj = 25/C
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis
= 5 V, IC = 10 :Ah
V
CE
= 5 V, IC = 2 mA h
V
CE
= 5 V, IC = 100 mA h
V
CE
h-Parameters at V
= 5V, IC = 2 mA, f = 1 kHz
CE
Small signal current gain – Stromverst. h
Input impedance – Eingangsimpedanz h
Output admittance – Ausgangsleitwert h
Reverse voltage transfer ratio
Spannungsrückwirkung
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
FE
FE
FE
fe
ie
oe
h
re
6
typ. 90 typ. 150 typ. 270
110...220 200...450 420...800
typ. 120 typ. 200 typ.400
typ. 220 typ. 330 typ. 600
1.6...4.5 kS 3.2...8.5 kS 6...15 kS
18 < 30 :S 30 < 60 :S 60 < 110 :S
typ.1.5 *10
-4
typ. 2 *10
-4
typ. 3 *10
01.11.2003
-4
General Purpose Transistors BC 546 ... BC 549
Characteristics, T
= 25/C Kennwerte, Tj = 25/C
j
Min. Typ. Max.
Collector saturation voltage – Kollektor-Sättigungsspannung
= 10 mA, IB = 0.5 mA V
I
C
I
= 100 mA, IB = 5 mA V
C
CEsat
CEsat
– 80 mV 200 mV
– 200 mV 600 mV
Base saturation voltage – Basis-Sättigungsspannung
I
= 10 mA, IB = 0.5 mA V
C
I
= 100 mA, IB = 5 mA V
C
BEsat
BEsat
– 700 mV –
– 900 mV –
Base-Emitter voltage – Basis-Emitter-Spannung
V
= 5 V, IC = 2 mA V
CE
V
= 5 V, IC = 10 mA V
CE
BE
BE
580 mV 660 mV 700 mV
– – 720 mV
Collector-Emitter cutoff current – Kollektorreststrom
V
= 80 V BC 546 I
CE
V
= 50 V BC 547 I
CE
V
= 30 V BC 548 I
CE
V
= 30 V BC 549 I
CE
CES
CES
CES
CES
– 0.2 nA 15 nA
– 0.2 nA 15 nA
– 0.2 nA 15 nA
– 0.2 nA 15 nA
Collector-Emitter cutoff current – Kollektorreststrom
V
= 80 V, Tj = 125/C BC 546 I
CE
V
= 50 V, Tj = 125/C BC 547 I
CE
V
= 30 V, Tj = 125/C BC 548 I
CE
V
= 30 V, Tj = 125/C BC 549 I
CE
CES
CES
CES
CES
––4 :A
––4 :A
––4 :A
––4 :A
Gain-Bandwidth Product – Transitfrequenz
V
= 5 V, IC = 10 mA, f = 100 MHz f
CE
T
– 300 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
= 10 V, f = 1 MHz C
CB
CB0
– 3.5 pF 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
= 0.5 V, f = 1 MHz C
EB
EB0
– 9 pF –
Noise figure – Rauschmaß
V
= 5 V, IC = 200 :A BC 547 F – 2 dB 10 dB
CE
R
= 2 kS f = 1 kHz, BC 548 F – 1.2 dB 4 dB
G
) f = 200 Hz BC 549 F – 1.2 dB 4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
250 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 546A
BC 547A
BC 548A
BC 556 ... BC 559
BC 546B
BC 547B
BC 548B
BC 549B
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
BC 547C
BC 548C
BC 549C
7
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