The BAΟΟST and BAΟΟSFP series are variable, fixed output low drop-out type voltage regulators with an ON/OFF
switch.
These regulators are used to provide a stabilized output voltage from a fluctuating DC input voltage.
Fixed output voltages are 3.3V, 5V, 6V(SFP), 7V, 8V, 9V, 10V(ST), 12V(ST). The maximum current capacity is 1 A for
each of the above voltages.
2) TO220FP-5, TO252-5 standard packages can be accomodated in wide application.
3) 0µA (design value) circuit current when switch is off
4) Richly diverse lineup.
5) Low minimum I/O voltage differential.
!!!!
Product codes
Output voltage (V)Product No.Output voltage (V)Product No.
Variable
3.3BA033ST / SFP
5.0BA05ST / SFP
6.0BA06SFP
7.0BA07ST / SFP
!!!!Absolute maximum ratings (Ta=25°C)
ParameterSymbolLimitsUnit
Power supply voltageV
Power dissipationPd
Operating temperature Topr-40~+85˚C
Storage temperature Tstg-55~+150˚C
Peak applied voltageVsurge50
*1 Reduced by 16mW for each increase in Ta of 1˚C over 25˚C.
*2 Reduced by 8mW for each increase in Ta of 1˚C over 25˚C.
*3 Voltage application time : 200 msec. or less
BA00AST / ASFP8.0BA08ST / SFP
9.0BA09ST / SFP
10.0BA10ST
12.0BA12ST
CC
TO220FP-5
TO252-5
35V
*1
2000
*2
1000
*3
mW
V
Regulator ICs
!!!!Block diagram
V
CTL
GND
BAΟΟST / BAΟΟSFP series
CC
2
1
3
REFERENCE
VOLTAGE
Variable output type (BA00AST / ASFP)
−
+
OUT
4
5
+
C
CC
V
CTL
GND
2
1
3
REFERENCE
VOLTAGE
!!!!Pin descriptions
Pin No.Function
1CTLOutput ON/OFF
2V
3GND
4OUT
5
Pin name
CC
C
N.C.
Power supply input
Ground
Output
Reference power supply pin for setting voltage with
BA00AST/ASFP.
the
In the BAOOST/SFP Series, these are NC pins,
except for the
BA00AST/ASFP.
Fixed output type
−
+
OUT
4
+
BAΟΟST / BAΟΟSFP series
Regulator ICs
!!!!Recommended operating conditions
BA00AST / ASFP BA08ST / SFP
ParameterSymbol Min.
V
Input voltage
Output current
CC
I
O
4
-1
BA033ST / SFP BA09ST / SFP
ParameterSymbol Min.
Input voltage
Output current
V
CC
4.3
I
O
-
BA05ST / SFP BA10ST
ParameterSymbol Min.
Input voltage
Output current
V
6
CC
-
I
O
BA06SFP BA12ST
ParameterSymbol Min.
Input voltage
Output current
V
CC
725
I
O
-
Max.
25
Max.
25V
1
Max.
25
1
Max.
1
Unit
V
A
Unit
A
Unit
V
A
Unit
V
A
ParameterSymbol Min. Max.
Input voltage
Output current
Reference voltage
Power save current
Output voltage
Input stability
Ripple rejection ratio
Load regulation
Temperature coefficient of output voltage
Minimum I/O voltage differential
Bias current
Peak output current
Output short-circuit current
ON mode voltage
OFF mode voltage
Input high level current
V
ref
1.2001.2251.250V
Ist-010µA
O
Reg.I-20100mVFig.1
R.R.4555-dB
Reg.L-50150mVI
CVO-±0.01-% / ˚CI
T
V
I
b
O-P
I
OS-0.4-AVCC=25V
I
Vth12.0--VOutput Active mode, I
Vth2--0.8VOutput OFF mode, I
Power save current
Output voltage
Input stability
Ripple rejection ratio
Load regulation
Temperature coefficient of output voltage
Minimum I/O voltage differential
Bias current
Peak output current
Output short-circuit current
ON mode voltage
OFF mode voltage
Input high level current
Power save current
Output voltage
Input stability
Ripple rejection ratio
Load regulation
Temperature coefficient of output voltage
Minimum I/O voltage differential
Bias current
Peak output current
Output short-circuit current
ON mode voltage
OFF mode voltage
Input high level current
I
ST
V
O1
-010µAFig.4
3.133.33.47VFig.1
Reg.I-20100mVFig.1
R.R.4555-dB
Reg.L-50150mVI
CVO
T
V
I
b
I
O-P
OS
I
-
±
d
-0.30.5V
0.02-
% / ˚C
-2.55.0mAIO=0mAFig.4
1.01.5-ATj=25
-0.4-AVCC=25VFig.5
Vth12.0--V
Vth2--0.8V
I
IN
100200300µACTL=5V, IO=0mAFig.6
I
ST
O1
V
-010
4.755.05.25VFig.1
Reg.I-20100mVFig.1
R.R.4555-dB
Reg.L-50150mVI
CVO
T
d
V
b
I
I
O-P
OS
I
-
±
0.02-
% / ˚C
-0.30.5VVCC=4.75VFig.3
-2.55.0mAIO=0mAFig.4
1.01.5-ATj=25
-0.4
-
Vth12.0--VOutput Active mode, I
Vth2--0.8VOutput OFF mode, I
Power save current
Output voltage
Input stability
Ripple rejection ratio
Load regulation
Temperature coefficient of output voltage
Minimum I/O voltage differential
Bias current
Peak output current
Output short-circuit current
ON mode voltage
OFF mode voltage
Input high level current
ST
O1
V
Reg.I-20100mVFig.1
R.R.4555-dB
Reg.L-50150mVI
T
CVO
V
I
b
I
O-P
I
OS
Vth12.0--VOutput Active mode, I
Vth2--0.8VOutput OFF mode, I
Power save current
Output voltage
Input stability
Ripple rejection ratio
Load regulation
Temperature coefficient of output voltage
Minimum I/O voltage differential
Bias current
Peak output current
Output short-circuit current
ON mode voltage
OFF mode voltage
Input high level current
I
ST
O1
V
-010
6.657.07.35VFig.1
Reg.I-20100mVFig.1
R.R.4555-dB
Reg.L-50150mVI
CVO
T
V
b
I
O-P
I
OS
I
-
±
0.02-
d
-0.30.5VV
-2.55.0mAI
1.01.5-ATj=25
-0.4-AV
Vth12.0--VOutput Active mode, I
Vth2--0.8VOutput OFF mode, I
Power save current
Output voltage
Input stability
Ripple rejection ratio
Load regulation
Temperature coefficient of output voltage
Minimum I/O voltage differential
Bias current
Peak output current
Output short-circuit current
ON mode voltage
OFF mode voltage
Input high level current
I
ST
V
O1
-010
7.68.08.4VFig.1
Reg.I-20100mVFig.1
R.R.4555-dB
Reg.L-50150mVI
T
CVO
V
d
I
b
I
O-P
I
OS
-
±
0.02-
% / ˚C
-0.30.5V
-2.55.0mAIO=0mAFig.4
1.01.5-ATj=25
-0.4-AVCC=25VFig.5
Vth12.0--VOutput Active mode
Vth2--0.8VOutput OFF mode
Power save current
Output voltage
Input stability
Ripple rejection ratio
Load regulation
Temperature coefficient of output voltage
Minimum I/O voltage differential
Bias current
Peak output current
Output short-circuit current
ON mode voltage
OFF mode voltage
Input high level current
I
ST
O1
V
-010
µAFig.4
8.559.09.45VFig.1
Reg.I-20100mVFig.1
R.R.4555-dB
Reg.L-50150mVI
T
CVO
V
I
b
I
O-P
I
OS
-
±
0.02-
d
-0.30.5V
-2.55.0mAI
1.01.5-ATj=25
-0.4-AV
% / ˚C
Vth12.0--VOutput Active mode
Vth2--0.8VOutput OFF mode
Power save current
Output voltage
Input stability
Ripple rejection ratio
Load regulation
Temperature coefficient of output voltage
Minimum I/O voltage differential
Bias current
Peak output current
Output short-circuit current
ON mode voltage
OFF mode voltage
Input high level current
Power save current
Output voltage
Input stability
Ripple rejection ratio
Load regulation
Temperature coefficient of output voltage
Minimum I/O voltage differential
Bias current
Peak output current
Output short-circuit current
ON mode voltage
OFF mode voltage
Input high level current
I
ST
V
O1
-010
9.51010.5VFig.1
Reg.I-20100mVFig.1
R.R.4555-dB
Reg.L-50150mVI
T
CVO
V
I
b
I
O-P
I
OS
-
±
0.02-
d
-0.30.5VV
-2.55.0mAI
1.01.5-ATj=25
-0.4
Vth12.0--VOutput Active mode, I
Vth2--0.8VOutput OFF mode, I
I
IN
100200300
I
ST
V
O1
-010
11.41212.6VFig.1
Reg.I-20100mVFig.1
R.R.4555-dB
Reg.L-50150mVI
T
CVO
V
d
I
b
I
O-P
I
OS
-
±
0.02-
-0.30.5VV
-2.55.0mAI
1.01.5-ATj=25
-0.4-AV
Vth12.0--VOutput Active mode, I
Vth2--0.8VOutput OFF mode, I
I
IN
100200300
BAΟΟST / BAΟΟSFP series
OFF mode
µAFig.4
CC
=
11→25V
V
e
IN
=
1Vrms, f=120Hz, I
=
5mA→1AFig.1
O
% / ˚C
I
=
5mA, Tj=0~125
O
CC
=
0.95V
O
O
=
0mAFig.4
˚C
-
AV
CC
=
25VFig.5
µ
ACTL=5V, I
OFF mode
µAFig.4
V
e
O
O
% / ˚C
I
O
O
=
CC
=
13→25V
IN
=
1Vrms, f=120Hz, I
=
5mA→1AFig.1
=
5mA, Tj=0~125
CC
=
0.95V
O
=
0mAFig.4
˚C
CC
=
25VFig.5
µ
ACTL=5V, I
O
=
0mAFig.6
O
=
100mAFig.2
˚C
O
=
0mAFig.6
O
=
0mAFig.6
0mAFig.6
O
=
100mAFig.2
˚C
O
=
0mAFig.6
O
=
0mAFig.6
Measurement
circuit
Fig.1
Fig.3
Fig.1
Measurement
circuit
Fig.1
Fig.3
Fig.1
BAΟΟST / BAΟΟSFP series
Regulator ICs
!!!!Measurement circuits
( The C pin only exists on the BA00AST / ASFP, for the BA00AST / ASFP, place a 6.8kΩ resistor between the OUT and
C pins, and a 2.2kΩ resisitor between the C and pins.)
e
IN
V
10Ω5W
100µF
CC
V
0.33µF
eIN=1V
f=120Hz
Ripple rejection ratio R.R. = 20 log
V
CC
CTL
rms
OUT
GND
*C
5V
e
IN
(
e
OUT
Fig.2 Measurement circuit for ripple rejection ratio
+
22µF
OUT
e
V
IO=100mA
)
GND
OUT
*C
22µF
+
I
O
V
CC
V
V
CC
CTL
0.33µF
5V
Fig.1 Measurement circuit for output voltage, input
stability, load regulation, and temperature
coefficient of output voltage
V
GND
OUT
*C
V
0.33µF
CC=
0.95V
O
V
CC
CTL
5V
Fig.3 Measurement circuit for minimum I/O
voltage differential
GND
OUT
*C
22µF
+
I
OS
CC
0.33µF
V
CC
V
CTL
5V
Fig.5 Measurement circuit for output
short-circuit current
22µF
+
IO=500mA
A
GND
OUT
*C
22µF
+
CC
0.33µF
CC
V
V
CTL
A
Fig.4 Measurement circuit for bias current,
power save current measurement circuit
GND
OUT
+
V
22µF
*C
V
0.33µF
V
CC
CC
CTL
A
Fig.6 Measurement circuit for ON/OFF mode voltage,
input high level current
BAΟΟST / BAΟΟSFP series
Regulator ICs
!!!!Operation notes
(1) Operating power supply voltage
When operating within the normal voltage range and within the ambient operating temperature range, most circuit
functions are guaranteed. The rated values cannot be guaranteed for the electrical characteristics, but there are no
sudden changes of the characteristics within these ranges.
(2) Power dissipation
Heat attenuation characteristics are noted on a separate page and can be used as a guide in judging power dissipation.
If these ICs are used in such a way that the allowable power dissipation level is exceeded, an increase in the chip
temperature could cause a reduction in the current capability or could otherwise adversely affect the performance of the
IC. Make sure a sufficient margin is allowed so that the allowable power dissipation value is not exceeded.
(3) Output oscillation prevention and bypass capacitor
Be sure to connect a capacitor between the output pin and GND to prevent oscillation. Since fluctuations in the valve of
the capacitor due to temperature changes may cause oscillations, a tantalum electrolytic capacitor with a small internal
series resistance (ESR) is recommended.
A 22m F capacitor is recommended; however, be aware that if an extremely large capacitance is used (1000µF or
greater), then oscillations may occur at low frequencies. Therefore, be sure to perform the appropriate verifications before
selecting the capacitor.
Also, we recommend connecting a 0.33m F bypass capacitor as close as possible between the input pin and GND.
(4) Current overload protection circuit
A current overload protection circuit is built into the outputs, to prevent IC destruction if the load is shorted.
This protection circuit limits the current in the shape of a ‘7’. It is designed with a high margin, so that even if a large current
suddenly flows through the large capacitor in the IC, the current is restricted and latching is prevented.
However, these protection circuits are only good for pre-venting damage from sudden accidents. The design should take
this into consideration, so that the protection circuit is not made to operate continuously (for instance, clamping at an
output of 1V
characteristics, and the design should take this into consideration.
(5) Thermal overload circuit
A built-in thermal overload circuit prevents damage from overheating. When the thermal circuit is activated, the various
outputs are in the OFF state. When the temperature drops back to a constant level, the circuit is restored.
(6) Internal circuits could be damaged if there are modes in which the electric potential of the application’s input (V
GND are the opposite of the electric potential of the various outputs. Use of a diode or other such bypass path is
recommended.
(7) Although the manufacture of this product includes rigorous quality assurance procedures, the product may be
damaged if absolute maximum ratings for voltage or operating temperature are exceeded. If damage has occurred,
special modes (such as short circuit mode or open circuit mode) cannot be specified. If it is possible that such special
modes may be needed, please consider using a fuse or some other mechanical safety measure.
(8) When used within a strong magnetic field, be aware that there is a slight possibility of malfunction.
or greater; below 1VF, the short mode circuit operates). Note that the capacitor has negative temperature
F
) and
CC
BAΟΟST / BAΟΟSFP series
Regulator ICs
(9) When the connected load which contains a big inductance component in an output terminal is connected and the
occurrence of a reverse electromotive force can be considered at the time of and power-output OFF at the time of starting,
I ask the insertion of protection diode of you.
(Example)
(10) Although it is sure that the example of an application circuit should be recommended, in a usage, I fully ask the
validation of a property of you.
In addition, when you alter the circuit constant with outside and you become a usage, please see and decide sufficient
margin in consideration of the dispersion in an external component and IC of our company etc. not only including the static
characteristic but including a transient characteristic.
This IC is monolithic IC and has P+ isolation and P substrate for an isolation between each element.
A P-N junction is formed by these P layers and N layers of each element, and various kinds of parasitic elements are
formed. For example, when the resistor and the transistor are connected with the pin like the example of a simple
architecture,
•At a resistor, it is at the time of GND > (PIN A), at a transistor (NPN), it is at the time of GND > (PIN B),
A P-N junction operates as parasitism diode.
•At a transistor (NPN), it is at the time of GND > (PIN B),
The NPN transistor of a parasitic element operates by N layers of other elements which approach with the abovementioned parasitism diode.
A parasitic element is inevitably made according to a potential relation on the architecture of IC.
When a parasitic element operates, the interference of a circuit operation is caused and the cause of a malfunction, as a
result a destructive is obtained.
Therefore, please be fully careful of impressing a voltage lower than GND(P substrate) to an input/output terminal etc. not
to carry out usage with which a parasitic element operates.
Output
pin
(Pin A)
N
P
+
Resistor
N
P substrate
(Pin A)
GND
Transistor (NPN)
(Pin B)
P
Parasitic elements
GND
Parasitic elements
The example of a simple architecture of bipolar IC