ROHM DAN217, BAV99U Datasheet

DAN217U / BAV99U / DAN217

Diodes

Switching diode

1

DAN217U / BAV99U

∗1 BAV99U is only sold in countries other than Japan.

!!!!Application

Ultra high speed switching

!!!!Features

1) Small surface mounting type. (UMD3,SMD3)

2) Two diode elements are connected in series
(V

F × 2) per circuit.

!!!!Construction
Silicon epitaxial planar

!!!!Circuit

∗∗∗∗

/ DAN217

!!!!External dimensions (Units : mm)

DAN217U / BAV99U

ROHM : UMD3
EIAJ : SC−70
JEDEC : SOT−323

DAN217

ROHM : SMD3
EIAJ : SC−59
JEDEC : SOT−346

2.0±0.2

1.3±0.1

0.65

0.65

0.1

A 7

0.1

±

±

2.1

1.25

+0.1

0.3

−0

(All leads have the same dimensions)

2.9±0.2

1.9±0.2

0.95 0.95

B A

0.2

0.2−0.1

±

+

2.8

1.6

+

0.1

0.4

−

0.05

(All leads have the same dimensions)

0.15±0.05

0.15

0.2

1.1

+

−

0.9±0.1

0.1

0.06

0.7

+

0.2

−

0.1

0.8±0.1

±

0.1

0∼0.1

0.1

0∼0.1

0.6

∼

0.3

!!!!Absolute maximum ratings (Ta=25°C)

Type

DAN217U
BAV99U
DAN217

Peak
reverse
voltage

RM

(

V

80
80

80 80 300 100 4000 200 150

DC
reverse
voltage

V

R

V)

(

80
80

V) I

Peak

forward

current

FM

300
300

(

mA) I

Mean

rectifying

current

O

(

mA)

100
100

Surge

current

Power

dissipation

(1µs) (TOTAL)

I

surge

(

mA)

Pd(mW) Tj(°C) Tstg(°C)

4000
4000

200
200

Junction

temperature

150
150

Storage

temperature

−55 ∼ +150

−55 ∼ +150

−55 ∼ +150

1/2

DAN217U / BAV99U / DAN217

Diodes

!!!!Electrical characteristics (Ta=25°C)

Forward voltage

Type

DAN217U
BAV99U
DAN217

V

F

Max.

1.2

1.2

1.2

(

V)

F

(

mA)

I

100
100
100

!!!!Electrical characteristic curves (Ta=25°C)
(DAN217U,BAV99U)"""Fig.1∼3

1.0

100m

10m

FORWARD CURRENT : IF(A)

100µ

10µ

1m

125°C

0

−25°C

25°C

75°C

0.6 0.8 1.0 1.2 1.4

0.40.2

FORWARD VOLTAGE : VF(V)

Fig.1 Forward characteristics

(DAN217) """Fig.4∼6

50

20

(mA)

10

F

5

2
1

0.5

FORWARD CURRENT : I

0.2

0.1

0.2 0.4 0.6 0.8 1.0 1.2

0

FORWARD VOLTAGE : V

Ta=85°C
50°C
25°C

0°C

−30°C

F

1.4 1.6

(V)

Fig.4 Forward characteristics

Reverse current

I

R

(µ

A)

Max.

0.2

0.2

0.1 70

1.0

100m

(A)

R

10m

1m

100µ

10µ

REVERSE CURRENT : I

1µ

0 50 100

REVERSE VOLTAGE : V

Fig.2 Reverse characteristics

1000

100

(nA)

R

10

1

0.1

REVERSE CURRENT : I

0.01
10 20 30 40 80706050

0

REVERSE VOLTAGE : V

Fig.5 Reverse characteristics

FigCond. Cond.

V

R

(

V)
70
70

R

(V)

1 ∼ 3
1 ∼ 3
4 ∼ 6

125°C

−25°C

75°C

25°C

2.0

(pF)

T

1.8

1.6

1.4

1.2

1.0
0 5 10 15 20 25 30 35

CAPACITANCE BETWEEN TERMINALS : C

REVERSE VOLTAGE : V

R

(V)

f=1MHz

Fig.3 Capacitance between terminals

characteristics

Ta=100°C

75°C
50°C

25°C

0°C

−25°C

R

(V)

(pF)

T

0.7

0.6

0.5

0.4

0.3

0.2
0 5 10 15 20 25 30 35

CAPACITANCE BETWEEN TERMINALS : C

REVERSE VOLTAGE : V

R

(V)

f=1MHz

0.8

Fig.6 Capacitance between terminals

characteristics

2/2