ROHM BAV70, BAV99, BAW56 Schematic [ru]

Diodes

Switching diode

BAV70 / BAW56 / BAV99

∗This product is available only outside of Japan.

z

zApplication

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Ultra high speed switching

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Features

1) Small surface mounting type. (SSD3)

2) High speed. (t

3) Four types of circuit configurations are available.

z

zConstruction

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Silicon epitaxial planar

=1.5ns Typ.)

rr

BAV70 / BAW56 / BAV99

z

zExternal dimensions (Units : mm)

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±0.2

2.9

±0.2

1.9

0.95

0.95

0.1

0.2

−

+

1.3

2.4±0.2

(All leads have the

ROHM : SSD3
EIAJ : −
JEDEC : SOT-23

same dimensions.)

+0.1

0.4

−0.05

0.15

0.95

+0.1

−0.69

0.45

+0.2

−0.1

±0.1

0~0.1

0.2Min.

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Marking

BAV70
BAW56
BAV99

(Ex.) BAV70

z

zCircuits

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(Type No.)

Product name Type No.

RA4

BAV70 BAW56

RA4
RA1
RA7

BAV99

Diodes

z

zAbsolute maximum ratings (T a=25°C)

zz

Peak

Type

BAV70
BAW56
BAV99

z

zElectrical characteristics (T a=25°C)

zz

reverse

voltage

RM

(V)

V

75
85
85

DC

reverse

voltage

R

(V)

V

70
70
75

Forward voltage

Type

BAV70
BAW56
BAV99

V

Max.

F

(V)

1.25

1.25

1.25

Cond.

F

(mA)

I

150
150
150

Peak

forward

current

FM

(mA)

I

450
450
450

Reverse current

R

(µA)

I

Max.

2.5

1.0

1.0

Mean

rectifying

current

O

(mA)

I

−

−

−

Surge
current

(1µs)

surge

I

4
4
4

Capacitance between terminals

Cond.

R

V

70
75
75

(V)

C

Max.

T

(pF)

1.5

2.0

1.5

V

Power

dissipation

(TOTAL)

(A)

Pd (mW)

300
225
300

Cond.

R

(V) f (MHz)
0
0
0

BAV70 / BAW56 / BAV99

Storage

temperature

)

Tstg (°C)

~+150

−55

~+150

−55

−55

~+150

Reverse recovery time

Cond.

R

(V) IF (mA)

V

10
10
10

P / N Type

N
P
N

10
10
10

1
1
1

Junction

temperature

Tj (°C

150
150
150

rr

(ns)

t

Max.

4
4
4

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Electrical characteristic curves

125

(%)

Max.

100

75

50

25

POWER DISSIPATION : Pd / Pd

0

0 25 50 75 100 125 150

AMBIENT TEMPERATURE : T

Fig.1 Power attenuation curve

50

20

(mA)

Ta=85°C

10

F

0.5

FORWARD CURRENT : I

0.2

0.1

50°C

5

25°C

0°C

−30°C

2
1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

FORWARD VOLTAGE : VF (V)

Fig.4 Forward characteristics

(N Type)

a (

°C)

(Ta=25°C)

50

20

(mA)

Ta=85°C

10

F

0.5

FORWARD CURRENT : I

0.2

0.1

50°C

5

25°C

0°C

−30°C

2
1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

FORWARD VOLTAGE : VF (V)

Fig.2 Forward characteristics

(P Type)

1000

(nA)

100

R

10

1

0.1

REVERSE CURRENT : I

0.01
10 20 30 40 80706050

0

REVERSE VOLTAGE : VR (V)

Fig.5 Reverse characteristics

(N Type)

Ta=100°C

75°C
50°C

25°C

0°C

−25°C

1000

100

(nA)

R

10

1

0.1

REVERSE CURRENT : I

0.01
10 20 30 40 50

0

REVERSE VOLTAGE : VR (V)

Fig.3 Reverse characteristics

(P Type)

(pF)

T

4

2

CAPACITANCE BETWEEN TERMINALS : C

0

024681012 1614 18 20

REVERSE VOLTAGE : VR (V)

Fig.6 Capacitance between

terminals characteristics

Ta=100°C

75°C

50°C
25°C

0°C

−25°C

f=1MHz

P Type

N Type