ROHM BA3662CP-V5 Technical data

A
Standard Variable Output LDO Regulators
BA3662CP-V5
No.10023EAT05
Description
The BA3662CP-V5 is low-saturation regulator. The output voltage can be arbitrarily configured using the external resistance. This IC has a built-in over-current protection circuit that prevents the destruction of the IC due to output short circuits and a thermal shutdown circuit that protects the IC from thermal damage due to overloading.
Features
1) Output Current: 300mA
2) High Output Voltage Precision : ±2%
3) Low saturation with PNP output
4) Built-in over-current protection circuit that prevents the destruction of the IC due to output short circuits
5) Built-in thermal shutdown circuit for protecting the IC from thermal damage due to overloading
6) Built-in over- voltage protection circuit that prevents the destruction of the IC due to power supply surges
7) TO220CP-V5 packaging
Applications
Audiovisual equipments, FPDs, televisions, personal computers or any other consumer device
Absolute Maximum Ratings (Ta=25℃)
Parameter Symbol Ratings Unit
1
Supply Voltage
Output Control Voltage V
Vcc -0.3+35.0 V
-0.3+Vcc V
CTL
2
Power Dissipation
Pd 2000 mW
Operating Temperature Range Topr -40~+125
Storage Temperature Range Tstg -55~+150
Maximum Junction Temperature
Peak Supply Voltage
1 Not to exceed Pd. 2 TO220CP-V5:Derating in done at 16mW/ for operating above Ta≧25℃.(without heat sink) 3 Applied voltage : 200msec or less (tr1msec)
NOTE : This product is not designed for protection against radioactive rays.
Tjmax +150
Vcc
3
peak
+50 V
tr1msec
50V
35V
0V
MAX200msec
(Voltage Supply more than 35V)
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BA3662CP-V5
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Operating conditions (Ta=-40+125)
Parameter Symbol Min. Max. Unit
Supply Voltage Vcc 4.0 25.0 V
Technical Note
Output Control Voltage V
0 Vcc V
CTL
Output Current Io 0 0.3 A
Output Voltage Vo 3.0 15.0 V
Protect features
Parameter Symbol Min. Typ. Max. Unit
Over Voltage protection Vcc 26 28 30 V
Electrical characteristics (Unless otherwise specified, Ta=25, Vcc=10V,VCTL=5V,Io=200mA,R1=2.2kΩ, R2=6.8kΩ)
Parameter Symbol Min. Typ. Max. Unit Conditions
Shut Down Current Isd 0 10 µA VCTL=0V
Bias Current Ib 2.5 5.0 mA VCTL=2V, Io=0mA
C Terminal Voltage Vc 1.200 1.225 1.250 V Io=50mA
Dropout Voltage ⊿Vd 0.3 0.5 V Vcc=Vo×0.95
Ripple Rejection R.R. 45 55 dB
f=120Hz, ein Io=100mA
1
=1Vrms,
Line Regulation Reg.I 20 100 mV Vcc=6→25V
Load Regulation Reg.L 40 80 mV Io=5mA→200mA
Temperature Coefficient of Output Voltage
Tcvo ±0.02 %/ Io=5mA,Tj=0125
Short Current Ios 0.1 A Vcc=25V,Vo=0V
ON Mode Voltage VthH 2.0 V ACTIVE MODE, Io=0mA
OFF Mode Voltage VthL 0.8 V OFF MODE, Io=0mA
Input High Current ICTL 100 200 300 µA VCTL=5V, Io=0mA
1 ein : Input Voltage Ripple
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2/11
2010.10 - Rev.
BA3662CP-V5
A
Reference data BA3662CP-V5(5.0V preset voltage) (Unless otherwise specified, Ta=25, Vcc=10V,VCTL=5V,Io=200mA,R1=2.2kΩ, R2=6.8kΩ)
3.0
]
mA
[
2.5
2.0
FEEDBACK_R
Ib+I
1.5
1.0
0.5
CIRCUIT CURRENT
0.0
02 46 81012141618202224
SUPPLY VOLTAGE : Vcc
Fig.1 Circuit Current
[V]
6
5
Vo [V]
4
3
2
OUTPU T VOLTAGE
1
0
0 100 200 300 400 500 600
OUTPUT CURRENT : IO[mA]
Fig.4 Load Regulation
6.0
5.5
Vo [V]
5.0
4.5
OUT PUT VO LTAGE
4.0
3.5
-40 -20 0 20 40 60 80 100
AMBIENT TEM PERATU RE : Ta
[℃]
6
5
Vo [V]
4
3
2
OUT PUT VO LTAGE
1
0
0 2 4 6 8 10 12 14 16 18 20 22 24
SUPPLY VOLT AGE : Vcc [V]
Fig.2 Line Regulation
300
250
Vd [mV]
Δ
200
150
100
50
DROPOU T VOLTAGE
0
0 50 100 150 200 250 300
OUTPUT CURRENT : IO [mA]
Fig.5 Dropout Voltage Io-Vd Characteristics
(Vcc=4.75V)
20
[mA]
16
FEEDBACK_R
12
Ib+I
8
4
CIRCUIT CURRENT
0
0 50 100 150 200 250 300
OUTPUT CURRENT : Io [mA]
Fig.8 Circuit Current (Io=0mA→300mA)
(IFEEDBACK_R555µA)
6
5
Vo [V]
4
3
2
OUT PUT VO LTAGE
1
0
0 2 4 6 8 1012141618202224
Fig.10 CTL Voltage vs Output Voltage
CONTROL VOLTAGE : V
[V]
CTL
6
5
Vo [V]
4
3
2
OUT PUT VOLTAG E
1
0
0 5 10 15 20 25 30 35
SUPPLY VOLT AGE : Vcc [V]
Fig.11 Overvoltage Operating
(lo = 200mA)
Technical Note
6
5
Vo [V]
4
3
2
OUT PUT VOLT AGE
1
0
0 2 4 6 8 1012141618202224
SUPPLY VOLTAGE : Vcc [V]
Fig.3 Line Regulation
(Io=200mA)
80
70
60
R.R. [dB]
50
40
30
20
RIPPLE REJECTION
10
0
10 100 1000 10000 100000 1000000
FREQUENCY : f [Hz]
Fig.6 Ripple Rejection
(lo=100mA)
1000
900
800
[µA]
CTL
700
I
600
500
400
300
200
CIRCUIT CURRENT
100
0
0 2 4 6 8 10 12 14 16 18 20 22 24
CONTROL VOLTAGE :V
Fig.9 CTL Voltage vs CTL Current Fig.7 Output Voltage
6
5
Vo [V]
4
3
2
OUT PUT VOLT AGE
1
0
130 140 150 160 170 180 190
AMBIENT TEM PERATU RE : Ta [℃]
Fig.12 Thermal Shutdown
Circuit Characteristics
CTL
[V]
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3/11
2010.10 - Rev.
BA3662CP-V5
A
Measurement Circuit for Reference Data
1µF
A
5V
Vo
Vcc
6.8k
Ω
CTL
ADJ
GND
IFEEDBACK _R
+
22µF
2.2k
Ω
Measurement Circuit of Fig.1
Vo
1µ F
Vcc
6.8kΩ
CTL
ADJ
GND
2.2k
5V
Ω
A A
+
22µF
10V
Measurement Circuit of Fig.4
Vo
1µF
10V 10V
Vcc
6.8k
Ω
CTL
ADJ
GND
5V
+
V
22µF
2.2k
Ω
Measurement Circuit of Fig.7
Vo
1µ F
Vcc
6.8kΩ
CTL
ADJ
GND
+
V
22µF
2.2k
Ω
10V
Measurement Circuit of Fig.10
Technical Note
Vo
Vcc
6.8k
1µF
CTL
ADJ
GND
Ω
+
V
22µF
2.2k
Ω
1µF
5V
Measurement Circuit of Fig.2
V
Vo
Vcc
6.8kΩ
ADJ
+
22µF
2.2k
Ω
4.75V
1µ F
CTL
GND
5V
Measurement Circuit of Fig.5
1µF
Vcc
CTL
5V
GND
A
Vo
ADJ
IFEEDBACK _R
6.8k
2.2kΩ
Ω
+
22µF
Measurement Circuit of Fig.8
Vo
Vcc
6.8k
2.2kΩ
Ω
+
22µ F
1µ F
CTL
ADJ
10V
GND
5V
Measurement Circuit of Fig.11
200mA
1Vrms
1µ F
10V
5V
Measurement Circuit of Fig.6
1µF
10V
Measurement Circuit of Fig.9
V
1µ F
10V
Measurement Circuit of Fig.12
Vo
Vcc
CTL
ADJ
GND
Measurement Circuit of Fig.3
Vcc
CTL
ADJ
GND
Vcc
A
CTL
GND
Vcc
CTL
GND
5V
6.8k
Ω
+
V
22µF
2.2k
Ω
Vo
6.8k
Ω
+
22µF
2.2k
Ω
Vo
6.8k
Ω
ADJ
2.2k
Ω
Vo
6.8k
Ω
ADJ
2.2kΩ
+
22µF
+
22µ F
200mA
100mA
V
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4/11
2010.10 - Rev.
BA3662CP-V5
A
Block Diagrams
Vcc
Vref
2
1
CTL
Pin No. Pin Name Function
1 CTL Output Control Pin
2 Vcc Power Supply Pin
3 GND GND
4 Vo Output Pin
5 C Adjustable Pin
To p Vi e wPackage dimension
OVP
TSD OCP
3
GND
Fig.13
Driver
Vref OVP OCP
TSD
Driver
:Bandgap Reference :Over Voltage pro tection :Over Current pr otection :Thermal Shut Down :Power Transistor Driver
5
R1
4
C
R2
Technical Note
VO
+
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BA3662CP-V5
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Technical Note
Input / Output equivalent circuit diagrams
Pin CTL Pin Vo Pin C Pin
Vcc
Vcc
CTL
IC
25kΩ
25kΩ
10
k
Ω
Vcc
Vo
5.5 k
Ω
Output voltage configuration method
Please connect resistors R1 and R2 (which determines the output voltage) as shown in Fig.14. Please be aware that the offset due to the current that flows from the C terminal becomes large when resistors with large values are used. The use of resistors with R1=2kΩ to 15kΩ is recommended.
Vo
R2
Vo ≒ Vc × (R1+R2) / R1
IC
Vc1.225V
(TYP.)
C pin
R1
Fig.14
C
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BA3662CP-V5
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Technical Note
Thermal design
W)
25
20
15
(1) 20.0
(1)When using a maximum heat sick : θjc=6.25(℃/W) (2)When using an IC alone : θja=62.5(℃/W )
10
Power Diss ipation Pd
5
(2) 2.0
0
0 25 50 75 100 125 150
Ambient Temperature Ta(℃)
Fig.15
When using at temperatures over Ta=25, please refer to the heat reducing characteristics shown in Fig.15. The IC characteristics are closely related to the temperature at which the IC is used, so it is necessary to operate the IC at temperatures less than the maximum junction temperature Tjmax.
Fig.15 shows the acceptable loss and heat reducing characteristics of the TO220CP-V5 package. Even when the ambient temperature Ta is a normal temperature (25), the chip (junction) temperature Tj may be quite high so please operate the IC at temperatures less than the acceptable loss Pd.
The calculation method for power consumption Pc(W) is as follows.
Pc=(VccVo)×Io+Vcc×Ib Acceptable loss Pd≧Pc
Solving this for load current Io in order to operate within the acceptable loss,
Io
PdVcc×Ib
VccVo
Vcc:
Vo:
Io: Ib:
Ishort:
Input voltage Output voltage Load current Circuit current Short current
(Please refer to Figs.8 for Ib.) It is then possible to find the maximum load current Io
Max with respect to the applied voltage Vcc at the time of thermal
design.
Calculation Example)
When Ta=85℃,Vcc=10V,Vo=5V
Io
Io192mA (Ib:8mA)
1.0410×Ib
5
With the IC alone :θja=62.5/W -16mW/
=2.0W 85=1.04W
25
Please refer to the above information and keep thermal designs within the scope of acceptable loss for all operating temperature ranges. The power consumption Pc of the IC when there is a short circuit (short between Vo and GND) is :
Pc=Vcc×(Ib+Ishort) (Please refer to Fig.4 for Ishort.)
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Notes for use
1. Absolute maximum ratings Use of the IC in excess of absolute maximum ratings (such as the input voltage or operating temperature range) may result in damage to the IC. Assumptions should not be made regarding the state of the IC (e.g., short mode or open mode) when such damage is suffered. If operational values are expected to exceed the maximum ratings for the device, consider adding protective circuitry (such as fuses) to eliminate the risk of damaging the IC.
2. Electrical characteristics described in these specifications may vary, depending on temperature, supply voltage, external circuits and other conditions. Therefore, be sure to check all relevant factors, including transient characteristics.
3. GND potential The potential of the GND pin must be the minimum potential in the system in all operating conditions. Ensure that no pins are at a voltage below the GND at any time, regardless of transient characteristics.
4. Ground wiring pattern When using both small-signal and large-current GND traces, the two ground traces should be routed separately but connected to a single ground potential within the application in order to avoid variations in the small-signal ground caused by large currents. Also ensure that the GND traces of external components do not cause variations on GND voltage. The power supply and ground lines must be as short and thick as possible to reduce line impedance.
5. Inter-pin shorts and mounting errors Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result in damage to the IC. Shorts between output pins or between output pins and the power supply or GND pins (caused by poor soldering or foreign objects) may result in damage to the IC.
6. Operation in strong electromagnetic fields Using this product in strong electromagnetic fields may cause IC malfunction. Caution should be exercised in applications where strong electromagnetic fields may be present.
7. Testing on application boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from a jig or fixture during the evaluation process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage.
8. Thermal consideration Use a thermal design that allows for a sufficient margin in light of the Pd in actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions. (Pd≧Pc)
Tjmax : Maximum junction temperature=150[], Ta : Peripheral temperature[℃] , θja : Thermal resistance of package-ambience[/W], Pd : Package Power dissipation [W], Pc : Power dissipation [W], Vcc : Input Voltage,
Vo : Output Voltage, Io : Load, Ib : Bias Current
Package Power dissipation : Pd (W)=(Tjmax-Ta) /θja Power dissipation : Pc (W)=(Vcc-Vo)×Io+Vcc×Ib
9. Vcc pin Insert a capacitor(capacitor≧0.33µF~) bet application. Be sure to allow a sufficient margin for input voltage levels.
ween the Vcc and GND pins. The appropriate capacitance value varies by
Technical Note
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BA3662CP-V5
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(
)
Technical Note
10. Vo Terminal Please attach an anti-oscillation capacitor between Vo and GND. The capacitance of the capacitor may significantly change due to factors such as temperature changes, which may cause oscillations. Please use a tantalum capacitor or aluminum electrolytic capacitor with favorable characteristics and small external series resistance (ESR) even at low temperatures. The output oscillates regardless of whether the ESR is large or small. Please use the IC within the stable operating region while referring to the ESR characteristics reference data shown in Fig.16. In cases where there are sudden load fluctuations, the large capacitor is recommended. Below figure, it is ESR-to-Io stability Area characteristics, measured by 22µF-ceramic-capacitor and resistor connected in series. This characteristic is not equal value perfectly to 22µF-aluminum electrolytic capacitor in order to measurement method. Note, however, that the stable range suggested in the figure depends on the IC and the resistance load involved, and can vary with the board’s wiring impedance, input impedance, and/or load impedance. Therefore, be certain to ascertain the final status of these items for actual use. Keep capacitor capacitance within a range of 22µF1000µF. It is also recommended that a 0.33µF bypass capacitor be connected as close to the input pin-GND as location possible. However, in situations such as rapid fluctuation of the input voltage or the load, please check the operation in real application to determine proper capacitance.
Vcc=10V Vo=5V Ta =2 5 R1=2kΩ~15kΩ Cin=0.33µF Cout=22µF
100
10
(Ω)
1
Cout_ESR
0.1 0
Fig.16 Cout_ESR vs Io (reference data)
Unstable operating region
Stable operating region
Unstable operating region
Io[mA]
Cout(22µF)
(0.001Ω~)
Vcc
10V
200 100
300
Cin
(0.33µF)
Vcc
CTL
VCTL
(5V)
GND
Operation Note 10 Measurement circuit
Vo
ADJ
ESR
R2
R1
(2k15kΩ)
Io (ROUT)
11. Over current protection circuit (OCP) The IC incorporates an integrated over-current protection circuit that operates in accordance with the rated output capacity. This circuit serves to protect the IC from damage when the load becomes shorted. It is also designed to limit output current (without latching) in the event of a large and instantaneous current flow from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous or transitive operation of the protection circuits.
12. Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit, which is designed to turn the IC off completely in the event of thermal overload. It is not designed to protect the IC from damage or guarantee its operation. ICs should not be used after this function has activated, or in applications where the operation of this circuit is assumed.
13. Applications or inspection processes where the potential of the Vcc pin or other pins may be reversed from their normal state may cause damage to the IC's internal circuitry or elements. Use an output pin capacitance of 1000µF or lower in case Vcc is shorted with the GND pin while the external capacitor is charged. Insert a diode in series with Vcc to prevent reverse current flow, or insert bypass diodes between Vcc and each pin.
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BA3662CP-V5
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Technical Note
14. Positive voltage surges on VCC pin A power zener diode should be inserted between VCC and GND for protection against voltage surges of more than 50V on the VCC pin.
Vcc
GND
15. Negative voltage surges on VCC pin A schottky barrier diode should be inserted between VCC and GND for protection against voltages lower than GND on the VCC pin.
Vcc
GND
16. Output protection diode Loads with large inductance components may cause reverse current flow during startup or shutdown. In such cases, a protection diode should be inserted on the output to protect the IC.
17. Regarding input pins of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. PN junctions are formed at the intersection of these P layers with the N layers of other elements, creating parasitic diodes and/or transistors. For example (refer to the figure below):
When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode When GND > Pin B, the PN junction operates as a parasitic transistor
Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided.
(Pin A)
Resistor
(Pin B)
P+
N
P
P
N
GND GND
P+
N
Parasitic elements
Parasitic elements or transistors
Example of Simple Monolithic IC Architecture
Transistor (NPN)
C
P+
N
B
E
N
P
N
P substrate
P+
(Pin B)
C
B
E
GND
N
(Pin A)
Parasitic elements or transistors
Parasitic elements
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2010.10 - Rev.
BA3662CP-V5
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Technical Note
Ordering part number
B A 3 6 6 2 C P - V 5 E 2
Part No. Part No.
TO220CP-V5
+0.4
0.2
-
15.2
12.0± 0.2
8.0± 0.2
4.92± 0.2
1.0± 0.2
+0.3
10.0
-
0.82± 0.1
0.92
0.1
φ3.2± 0.1
1.7781.444
4.5±0.1
2.8
(2.85)
4.12
+0.2
-
0.1
0.42± 0.1
1.58
13.60
(1.0)
(Unit : mm)
16.92
Package
CP-V5: TO220CP-V5
<Tape and Reel information>
Embossed carrier tapeTape
Quantity Direction
of feed
500pcs E2
The direction is the 1pin of product is at the lower left when you hold
()
reel on the left hand and you pull out the tape on the right hand
Reel
Packaging and forming specification E2: Embossed tape and reel
1pin
Order quantity needs to be multiple of the minimum quantity.
Direction of feed
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Notes
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Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, of ce-automation equipment, commu­nication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes effor ts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injur y, re or any other damage caused in the event of the failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
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R1010
A
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