ROHM BA33D15HFP Technical data

Secondary LDO Regulators

Dual Output
Secondary Fixed Output LDO Regulators

BA3258HFP, BA33D15HFP, BA33D18HFP

●Description

The BA3258HFP, BA33D15HFP, BA33D18HFP are fixed 2-output low-saturation regulators with a voltage accuracy at both
outputs of 2%. These series incorporate both overcurrent protection and thermal shutdown (TSD) circuits in order to
prevent damage due to output short-circuiting and overloading, respectively.

●Features

1) Output voltage accuracy: 2%.

2) Output current capacity: 1A (BA3258HFP), 0.5A (BA33D□□ Series)

3) A ceramic capacitor can be used to prevent output oscillation (BA3258HFP).

4) High Ripple Rejection (BA33D□□ Series)

5) Built-in thermal shutdown circuit

6) Built-in overcurrent protection circuit

●Applications

FPDs, TVs, PCs, DSPs in DVDs and CDs

●Product Lineup

Part Number

BA3258HFP 3.3 V 1.5 V 1 A 1 A HRP5

BA33D15HFP 3.3 V 1.5 V 0.5 A 0.5 A HRP5

BA33D18HFP 3.3 V 1.8 V 0.5 A 0.5 A HRP5

●Absolute Maximum Ratings
BA3258HFP BA33D□□ Series

Parameter

Output voltage

Vo1

Symbol Ratings Unit

Output voltage

Vo2

Current capability

Io1

Parameter

Current capability

Io2

Symbol Ratings Unit

No.11026EBT01

Package

Applied voltage VCC 15*1 V Applied voltage VCC 18*1 V

Power dissipation Pd 2300*2 mW Power dissipation Pd 2300*2 mW

Operating
temperature range

Ambient storage
temperature

Maximum junction
temperature

*1 Must not exceed Pd
*2. Derated at 18.4 mW/℃ at Ta>25℃ when mounted on a glass epoxy board (70 mm  70 mm  1.6 mm)

●Recommended Operating Conditions
BA3258HFP BA33D□□Series

Parameter

Input power supply
voltage

3.3 V output current Io1 - - 1 A 3.3 V output current Io1 - - 0.5 A

1.5 V output current Io2 - - 1 A 1.5V output current Io2 - - 0.5 A

T

−30 to 85 ℃

opr

T

−55 to 150 ℃

stg

T

jmax

Symbol

4.75 - 14.0 V

V

CC

150 ℃

Ratings

Min. Typ. Max. Min. Typ. Max.

Unit

Operating
temperature range

Ambient storage
temperature

Maximum junction
temperature

Parameter

Input power supply
voltage

1.8 V output current Io2 - - 0.5 A

T

−25 to 105 ℃

opr

T

−55 to 150 ℃

stg

T

150 ℃

jmax

Symbol

4.1 - 16.0 V

V

CC

Ratings

Unit

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© 2011 ROHM Co., Ltd. All rights reserved.

1/8

2011.03 - Rev.B

BA3258HFP,BA33D15HFP,BA33D18HFP

●Electrical Characteristics

BA3258HFP (Unless otherwise specified, Ta = 25℃, Vcc = 5 V)

Parameter Symbol

Bias current IB - 3 5 mA Io1 = 0 mA, Io2 = 0 mA

[3.3 V Output Block]

Output voltage1 Vo1 3.234 3.300 3.366 V Io1 = 50 mA

Minimum output voltage difference 1 ∆Vd1 - 1.1 1.3 V Io1 = 1 A, Vcc = 3.8 V

Output current capacity 1 Io1 1.0 - - A

Ripple rejection 1 R.R.1 46 52 - dB f=120 Hz,ein=0.5Vp-p,Io1=5mA
Input stability 1 Reg.I1 - 5 15 mV Vcc = 4.75→14 V, Io1 = 5 mA
Load stability 1 Reg.L1 - 5 20 mV Io1 = 5 mA→1A

Temperature coefficient of output voltage 1*3 Tcvo1 -

[1.5 V Output Block]

Output voltage 2 Vo2 1.470 1.500 1.530 V Io2 = 50 mA

Output current capacity 2 Io2 1.0 - - A

Ripple rejection 2 R.R.2 46 52 - dB f=120 Hz,ein=0.5Vp-p,Io2=5mA
Input stability 2 Reg.I2 - 5 15 mV Vcc = 4.1→14 V, Io2 = 5 mA
Load stability 2 Reg.L2 - 5 20 mV Io2 = 5 mA→1 A

Temperature coefficient of output voltage 2*3 Tcvo2 -

*3: Design is guaranteed within these parameters. (No total shipment inspection is made.)

BA33D□□ Series (Unless otherwise specified, Ta = 25℃, Vcc = 5 V)

Parameter Symbol

Bias current Ib - 0.7 1.6 mA Io1 = 0 mA, Io2 = 0 mA

[3.3V Output Block]

Output voltage 1 Vo1 3.234 3.300 3.366 V Io1 = 250 mA
Minimum output voltage difference 1 ∆Vd1 － 0.25 0.50 V Io1 = 250 mA, Vcc = 3.135 V

Output current capacity 1 Io1 0.5 - - A

Ripple rejection 1 R.R.1 - 68 - dB f=120 Hz,ein =1Vp-p,Io1=100mA
Input stability 1 Reg.I1 - 5 30 mV Vcc=4.1V→16V,Io1=250mA
Load stability 1 Reg.L1 - 30 75 mV Io1= 0 mA→0.5 A

Temperature coefficient of output voltage 1*3

BA33D15HFP Vo2 output

[1.5V Output Block]

Output voltage 2 Vo2 1.470 1.500 1.530 V Io2 = 250 mA

Output current capacity 2 Io2 0.5 - - A

Ripple rejection 2 R.R.2 - 74 - dB f=120 Hz,ein=1Vp-p,Io2=100mA
Input stability 2 Reg.I2 - 5 30 mV Vcc =4.1V→16 V,Io2=250mA
Load stability 2 Reg.L2 - 30 75 mV Io2 = 0 mA→0.5A

Temperature coefficient of output voltage 2*3 Tcvo2 -

BA33D18HFP Vo2 output

[1.8V Output Block]

Output voltage 2 Vo2 1.764 1.800 1.836 V Io2=250 mA

Output current capacity 2 Io2 0.5 - - A

Ripple rejection 2 R.R.2 - 72 - dB f =120Hz,ein =1Vp-p,Io2=100mA
Input stability 2 Reg.I2 - 5 30 mV Vcc = 4.1V→16V,Io2=250mA
Load stability 2 Reg.L2 - 30 75 mV Io2 = 0 mA→0.5 A

Temperature coefficient of output voltage 2*3 Tcvo2 -

*3: Design is guaranteed within these parameters. (No total shipment inspection is made.)

Tcvo1 - 0.01 - %/℃ Io1 = 5 mA, Tj=0℃ to 125℃

Limits

Min. Typ. Max.

0.01

0.01

Limits

Min. Typ. Max.

0.01

0.01

- %/℃ Io1 = 5 mA, Tj = 0℃ to 85℃

- %/℃ Io2 = 5 mA, Tj = 0℃ to 125℃

- %/℃ Io2 = 5 mA,Tj = 0℃ to 125℃

- %/℃ Io2 = 5 mA, Tj = 0℃ to 125℃

Unit Conditions

Unit Conditions

Technical Note

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2/8

2011.03 - Rev.B

BA3258HFP,BA33D15HFP,BA33D18HFP

●BA3258HFP Electrical Characteristics Curves (Unless otherwise specified, Ta = 25℃, Vcc = 5V)

4.0

3.5

］

mA

［

3.0

Icc

：

2.5

2.0

1.5

1.0

CIRCUIT CURRENT

0.5

0.0
0 2 4 6 8 10 12 14

SUPPLY VOLT AGE：Vcc［V

］

Fig.1 Circuit Current

(with no load)

5

］

4

mA

［

IB

：

3

2

1

CIRCUIT CURRENT

0

0.0 0.2 0.4 0.6 0.8 1.0

OUTPUT CURRENT：Io1［A

］

Fig. 2 Circuit Current vs Load Current Io2

(Io1 = 0 1 A)

5

］

4

mA

［

IB

：

3

2

1

CIRCUIT CURRENT

0

0.0 0.2 0.4 0.6 0.8 1.0

Fig. 3 Circuit Current vs Load Current Io2

4.0

3.5

］

V

［

3.0

Vo1

：

2.5

2.0

1.5

1.0

OUT PUT VOLT AGE

0.5

0.0
02468101214

SUPPLY VOLTAGE：Vcc［V

］

Fig. 4 Input Stability

(3.3 V output with no load)

1.6

1.4

］

V

［

1.2

Vo2

：

1.0

0.8

0.6

0.4

OUTPU T VOLTAGE

0.2

0.0
02468101214

SUPPLY VOLT AGE：Vcc［V

Fig. 5 Input Stability

(1.5 V output with no load)

］

4.0

3.5

］

V

［

3.0

Vo1

：

2.5

2.0

1.5

1.0

OUT PUT VOLTAGE

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5

1.6

1.4

］

V

［

1.2

Vo2

：

1.0

0.8

0.6

0.4

OUT PUT VOLTAGE

0.2

0.0

0.0 0. 5 1.0 1.5 2. 0 2.5
OUTPUT CURRENT：Io2［A

］

Fig. 7 Load Stability

3.325

3.315

］

V

［

3.305

Vo1

：

3.295

3.285

3.275

3.265

OUTPU T VOLTAGE

3.255

3.245

-30-150 1530 456075
TEMPERATURE：Ta

［℃］

Fig. 10 Output Voltage vs Temperature

(3.3 V output)

1.4

1.2

Vd [V]

1.0

Δ

0.8

0.6

INPUT /OUTPU T

0.4

0.2

VOLTAGE D IFFER ENCE:

0.0

0.0 0.2 0.4 0. 6 0.8 1.0
OUTPUT CURRENT：Io1［A

］

Fig. 8 I/O Voltage Difference (3.3 V output)

(Vcc = 3.8 V, Io1 = 0  1 A)

1.506

1.504

］

V

［

1.502

Vo2

：

1.500

1.498

1.496

1.494

OUTPU T VOLTAGE

1.492

1.490

-30-1501530456075

TEMPERATURE：Ta

［℃］

Fig. 11 Output Voltage vs Temperature

(1.5 V output)

80

70

］

dB

［

60

R.R.

：

50

40

30

20

RIPPLE REJECTION

10

0

10 100 1000 10000

Fig. 9 R.R. Characteristics

(ein = 0.5 Vp-p, Io = 5 mA)

5.5

5.0

］

mA

4.5

［

IB

：

4.0

3.5

3.0

2.5

CIRCUIT CURRENT

2.0

1.5

-30-150 1530456075

Fig. 12 Circuit Current vs Temperature

Technical Note

OUTPUT CURRENT：Io2［A

(Io2 = 0  1 A)

OUTPUT CURRENT：Io1［A

Fig. 6 Load Stability

(3.3 V output)

R.R.(1.5 V output)

R.R.(3.3 V output)

FREQUENCY

TEMPERATURE：Ta

(Io = 0 mA)

：f［Hz］

［℃］

］

］

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© 2011 ROHM Co., Ltd. All rights reserved.

3/8

2011.03 - Rev.B

)

)

BA3258HFP,BA33D15HFP,BA33D18HFP

●BA33D15HFP Electrical Characteristics Curves (Unless otherwise specified, Ta = 25℃, Vcc = 5V)

1.4

1.2

］

mA

［

1.0

Icc

：

0.8

0.6

0.4

CIRCUIT CURRENT

0.2

0.0
0 2 4 6 8 1012141618

SUPPLY VOLTAGE：Vcc［V

］

Fig. 13 Circuit Current

(with no load)

40

35

］

mA

30

［

Icc

：

25

20

15

10

CIRCUIT CURRENT

5

0

0.0 0.1 0.2 0.3 0.4 0.5

OUTPUT CURRENT：Io1［A

］

Fig. 14 Circuit Current vs Load Current Io1

(Io1 = 0  500 mA)

40

35

］

mA

30

［

Icc

：

25

20

15

10

CIRCUIT CURRENT

5

0

0.0 0.1 0.2 0.3 0.4 0.5

Fig. 15 Circuit Current vs Load Current Io2

4.0

3.5

］

V

［

3.0

Vo1

：

2.5

2.0

1.5

1.0

OUTPU T VOLTAGE

0.5

0.0
0 2 4 6 8 1012141618

SUPPLY VOLTAGE：Vcc［V

Fig. 16 Input Stability

(3.3 V output, Io1 = 250 mA）

］

1.6

1.4

］

V

［

1.2

Vo2

：

1.0

0.8

0.6

0.4

OUT PUT VOLTAGE

0.2

0.0
0 2 4 6 8 10 12 14 16 18

SUPPLY VOLTAGE：Vcc［V

Fig. 17 Input Stability

(1.5 V output, Io2 = 250 mA)

4.0

3.5

］

V

［

3.0

OUT

V

：

2.5

2.0

1.5

1.0

OUT PUT VOLTAGE

0.5

0.0

］

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

1.6

1.4

］

V

［

1.2

OUT

V

：

1.0

0.8

0.6

0.4

OUTPU T VOLTAGE

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

OUTPUT CURRENT：Io1［A

］

Fig. 19 Load Stability

(1.5 V output)

0.5

］

V

［

Vd

0.4

Δ

：

0.3

0.2

INPUT /OUTPUT

0.1

VOLTAGE D IFFER ENC E

0.0

0.0 0.1 0.2 0.3 0.4 0.5

OUTPUT CURRENT：Io1［A

Fig. 20 I/O Voltage Difference

(Vcc = 3.135 V, 3.3 V output)

］

80

70

］

dB

［

60

R.R.

：

50

40

30

20

RIPPLE REJECTION

10

0

100 1000 10000

Fig. 21 R.R. Characteristics

(ein = 1 Vp-p, Io = 100 mA)

3.45

3.40

］

V

［

Vo1

3.35

：

3.30

3.25

OUT PUT VOLT AGE

3.20

3.15

-25-105 203550658095

TEMPERATURE：Ta

［℃］

Fig. 22 Output Voltage vs Temperature

(3.3 V output)

1.60

］

V

［

1.55

Vo2

：

1.50

1.45

OUTPU T VOLTAGE

1.40

-25-105 20 3550658095

TEM PERATUR E：Ta

［℃］

Fig. 23 Output Voltage vs Temperature

(1.5 V output)

1050

950

］

mA

［

850

Icc

：

750

650

550

450

CIRCUIT CURRENT

350

250

-25-51535557595

Fig. 24 Circuit Current vs Temperature

Technical Note

OUTPUT CURRENT：Io2［A

(Io2 = 0  500 mA)

OUTPUT CURRENT：Io1［A

Fig. 18 Load Stability

(3.3 V output)

Vo1(3.3V output

FREQUENCY：f［Hz

TEM PERATU RE：Ta

(Io = 0 mA)

］

］

Vo2(1.5V output

］

［℃］

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4/8

2011.03 - Rev.B

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BA3258HFP,BA33D15HFP,BA33D18HFP

Technical Note

●Block Diagrams / Standard Example Application Circuits

BA3258HFP

GND

FIN

Shutdown

Fig.25 BA3258HFP Block Diagram

Thermal

Current

Limit

Current

Limit

V

REF

V

5

V

4

GND

3

2

V02_S

Vcc

1

O1

3.3V

C

O1

1μF

Pin No. Pin name Function

1 Vcc Power supply pin

2 V02_S Output voltage monitor pin

3 GND GND pin

O2

1.5V

C

O2

1μF

4 Vo2 1.5 V output pin

5 Vo1 3.3 V output pin

FIN GND GND pin

TOP VIEW

PIN

V

IN

C

3.3μF

Vcc (1 Pin) Approximately 3.3µF

Vo1 (5 Pin) 1µF to 1000µF

Vo2 (4 Pin) 1µF to 1000µF

IN

External capacitor
setting range

1 2 3 4 5

BA33D□□Series

Reference

Voltage

GND(Fin)

Vcc

Current

Limit

Sat.

Prevention

Vcc

Pin No. Pin name Function

1 Vcc Power supply pin

2 N.C. N.C. pin

3 GND GND pin

4 Vo1 3.3 V output pin

5 Vo2 1.5 V/1.8 V output pin

FIN GND GND pin

Vcc

Vcc

*The N.C. pin is not electrically connected internally

Thermal

Shut Down

Current

Limit

Sat.

Prevention

PIN

External capacitor

Vcc (1 Pin) Approximately 3.3µF

Vo1 (4 Pin) 10µF to 1000µF

Vo2 (5 Pin) 10µF to 1000µF

1

Vcc Vo2

1μF

2

3 4

GND Vo1 N.C.

Co

10μF

5

Co

10μF

setting range

TOP VIEW

1 2 3 4 5

Fig.26 BA33D□□ Series Block Diagram

●Input / Output Equivalent Circuits
BA3258HFP BA33D□□Series

Vcc

Vcc

Vo1

Vo2

Vo2_S

Fig. 27 BA3258HFP Input / Output Equivalent Circuit Fig. 28 BA33D□□Series Equivalent Circuit

Vcc

Vo1/Vo2

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5/8

2011.03 - Rev.B

r

r

r

BA3258HFP,BA33D15HFP,BA33D18HFP

Technical Note

●Thermal Design
If the IC is used under excessive power dissipation conditions, the chip temperature will rise, which will have an adverse
effect on the electrical characteristics of the IC, such as a reduction in current capability. Furthermore, if the temperature
exceeds T

, element deterioration or damage may occur. Implement proper thermal designs to ensure that the power

jmax

dissipation is within the permissible range in order to prevent instantaneous IC damage resulting from heat and maintain the
reliability of the IC for long-term operation. Refer to the power derating characteristics curves in Fig. 29.

・Power Consumption (Pc) Calculation Method

・Power consumption of 3.3V power transistor:

Pc1 = (Vcc − 3.3)  Io1

・Power consumption of Vo2 power transistor:

Pc2 = (Vcc − Vo2)  Io2

・Power consumption due to circuit current:

Pc3 = Vcc  Icc

Vcc

P

I

Controlle

Icc

GND

Vcc

Power T

Power Tr

3.3 V output

Vo1

Vcc

Vo2

*Vcc: Applied voltage
Io1: Load current on Vo1 side

O1

I

Io2: Load current on Vo2 side
Icc: Circuit current
* The Icc (circuit current) varies with the load.

I

O2

1.5 V output o

1.8 V output

(See reference data in Figs. 2, 3, 14, and 15.)

→Pc = Pc1 + Pc2 + Pc3

Refer to the above and implement proper thermal designs so that the IC will not be used under excessive power dissipation
conditions under the entire operating temperature range.

・Calculation example (BA33D15HFP)

Example: Vcc = 5V, Io1 = 200mA, and Io2 = 100mA

・Power consumption of 3.3V power transistor: Pc1 = (Vcc − 3.3)  Io1 = (5 − 3.3)  0.2 = 0.34W
・Power consumption of 1.5V power transistor: Pc2 = (Vcc − 1.5)  Io2 = (5 − 1.5)  0.2 = 0.35W
・Power consumption due to circuit current: Pc3 = Vcc  Icc = 5  0.0085 = 0.0425 (W) (See Figs. 14 and 15)

Implement proper thermal designs taking into consideration the dissipation at full power consumption
(i.e., Pc1 + Pc2 + Pc3 = 0.34 + 0.35 + 0.0425 = 0.7325W).

●Explanation of External Components
○BA3258HFP

1) Pin 1 (Vcc pin)

Connecting a ceramic capacitor with a capacitance of approximately 3.3F between Vcc and GND as close to the pins
as possible is recommended.

2) Pins 4 and 5 (Vo pins)

Insert a capacitor between the Vo and GND pins in order to prevent output oscillation. The capacitor may oscillate if
the capacitance changes as a result of temperature fluctuations. Therefore, it is recommended that a ceramic
capacitor with a temperature coefficient of X5R or above and a maximum capacitance change (resulting from
temperature fluctuations) of 10% be used. The capacitance should be between 1F and 1,000µF. (Refer to Fig. 30)

○BA33D□□Series

1) Pin 1 (Vcc pin)

Insert a 1F capacitor between Vcc and GND. The capacitance will vary depending on the application. Check the
capacitance with the application set and implement designing with a sufficient margin.
Pins 4 and 5 (Vo pins)

2)

Insert a capacitor between the Vo and GND pins in order to prevent oscillation. The capacitance may vary greatly with
temperature changes, thus making it impossible to completely prevent oscillation. Therefore, use a tantalum aluminum
electrolytic capacitor with a low ESR (Equivalent Serial Resistance). The output will oscillate if the ESR is too high or too
low, so refer to the ESR characteristcs in Fig. 31 and operate the IC within the stable operating region. If there is a
sudden load change, use a capacitor with higher capacitance. A capacitance between 10F and 1,000F is
recommended.

200 400 600 800 10000

Unstable region

不安定領域

Stable region

安定領域

Io [mA]

10.0

5.0

4.0

2.0

]

1.0

Ω

0.5

0.2

ESR [

0.15

0.1

0.05

Unstable region

不安定領域

Stable region

安定領域

Unstable region

不安定領域

0.02

0.01
200 400 600 800 10000

Io [mA]

10

9

(3) 7.3 W

8

7

(2) 5.5 W

6
5

4

(1) 2.3 W

3
2
1
0

PO W ER D I SSI PAT ION ：Pd ［W］

0

AMBIENT TEMPERATURE：Ta ［℃］

Board size: 70 mm  70  1.6 mm (with a thermal via incorpo rated by the board)

Board surface area: 10.5 mm  10.5 mm

(1) 2-layer board (Backside copper foil area: 15 mm  15mm)

(2) 2-layer board (Backside copper foil area: 70 mm  70 mm)

(3) 4-layer board (Bac kside copper foil area: 70 mm  70mm)

25 50 75 100 125 150

10.0

5.0

2.0

]

1.0

Ω

0.5

0.2

ESR [

0.1

0.05

0.02

0.01

Fig. 29 Thermal Derating Curves Fig. 30 BA3258HFP ESR characteristics Fig. 31 BA33D□□ Series ESR

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6/8

2011.03 - Rev.B

© 2011 ROHM Co., Ltd. All rights reserved.

～

～

～

～

(

)

(

)

BA3258HFP,BA33D15HFP,BA33D18HFP

Technical Note

●Notes for use

1) Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break
down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated
values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.

2) GND voltage
The potential of GND pin must be minimum potential in all operating conditions.

3) Thermal Design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.

4) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.

5) Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.

6) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting or storing the IC.

7) Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.

8) Ground Wiring Pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the
GND wiring pattern of any external components, either.

9) Thermal Shutdown Circuit (TSD)
This IC incorporates a built-in thermal shutdown circuit for protection against thermal destruction. Should the junction
temperature (Tj) reach the thermal shutdown ON temperature threshold, the TSD will be activated, turning off all output
power elements. The circuit will automatically reset once the chip's temperature Tj drops below the threshold temperature.
Operation of the thermal shutdown circuit presumes that the IC's absolute maximum ratings have been exceeded.
Application designs should never make use of the thermal shutdown circuit.

10) Overcurrent protection circuit
An overcurrent protection circuit is incorporated in order to prevention destruction due to short-time overload currents. Continued
use of the protection circuits should be avoided. Please note that the current increases negatively impact the temperature.

11) Damage to the internal circuit or element may occur when the polarity of the Vcc pin is opposite to that of the other pins in
applications. (I.e. Vcc is shorted with the GND pin while an external capacitor is charged.) Use a maximum capacitance of
1000 mF for the output pins. Inserting a diode to prevent back-current flow in series with Vcc or bypass diodes between
Vcc and each pin is recommended.

Bypass diode

Diode for preventing back current flow

VCC

Output pin

（端子A）

（Pin A）

＋

P

N N

P substrate

P 基板

Resistor

抵抗

P

N

GND

＋

P

寄生素子

Parasitic elements

（端子B）

（Pin B）

N

Transistor (NPN)

トランジスタ

B

C

＋

NPN

E

N

Ｐ

P

N

Ｎ

x

P 基板

GND

(Pin B)

C

B

～

～

GND

＋

P

P

N

Ｎ

Pin A

E

GND

Parasitic elements or

transistors

～

Parasitic elements

GND

Fig32 Bypass diode F

ig. 33 Example of Simple Bipolar IC Architecture

～

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7/8

2011.03 - Rev.B

© 2011 ROHM Co., Ltd. All rights reserved.

BA3258HFP,BA33D15HFP,BA33D18HFP

●Ordering part number

B A 3 5 2 8 H F P - T R

Technical Note

Part No. Part No.

3528
33D15
33D18

HRP5

9.395±0.125

(MAX 9.745 include BURR)

8.82 ± 0.1
(6.5)

8.0±0.13 1.017±0.2

1.2575

54321

0.08±0.05

1.72

0.08 S

(7.49)

0.73±0.1

1.905±0.1

S

0.835±0.2

1.523±0.15

+5.5°

4.5°

−4.5°
+0.1

0.27

−0.05

(Unit : mm)

10.54±0.13

Package

HFP:HRP5

<Tape and Reel information>

Embossed carrier tapeTape

Quantity

Direction
of feed

2000pcs
TR

The direction is the 1pin of product is at the upper right when you hold

( )

reel on the left hand and you pull out the tape on the right hand

Reel

Packaging and forming specification
TR: Embossed tape and reel
(HRP5)

1pin

Direction of feed

Order quantity needs to be multiple of the minimum quantity.

∗

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© 2011 ROHM Co., Ltd. All rights reserved.

8/8

2011.03 - Rev.B

Notes

No copying or reproduction of this document, in par t or in whole, is permitted without the
consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.

The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes effor ts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machiner y, nuclear-reactor controller, fuel­controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.

Notice

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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

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A