BAxxDD0WT SeriesBAxxDD0HFP SeriesBAxxCC0WT SeriesBAxxCC0WFP Series
●General Description
Standard Fixed Output LDO Regulators are low-saturation regulators, available for output s up to 2A / 1A. ROHM has a
wide output voltage range and package lineup with and without shutdown switches. This IC has a built-in over-current
protection circuit that prevents the destruction of the IC due to output short circuits, a thermal shut-down circuit that protects
the IC from damage due to overloading and an over-voltage protection circuit that protects the IC from surges generated in
the power supply line of the IC.
●Features
±1% highly accurate output voltage (BAxxDD0xx)
Low saturation with PNP output
Built-in over-current protection circuit that prevents
the destruction of the IC due to output short circuits
Built-in thermal shutdown circuit for protecting the IC
from damage due to overloading
Built-in over- voltage protection circuit that prevents
the destruction of the IC due to power supply surges
●Key Specification
Input Power Supply Voltage: 25V (Max.)
Output voltage type: Fixed
Output current: BAxxDD0xx series 2A (Max.)
BAxxCC0xx series 1A (Max.)
Shutdown current: 0μA(Typ.)
Operating temperature range: -40℃ to +125℃
●Applications
Used in DSP power supplies for DVD and CD players,
FPDs, televisions, personal computers or any other
consumer device
■2A output BAxxDD0xx Series
Part Number
BAxxDD0WT ○○○○○○○○○TO220FP-5
BAxxDD0WHFP ○○ ○ ○○○○○○HRP5
BAxxDD0T
3.03.3 5.0 6.07.08.09.0 10.0 12.0 15.0
○○○-○○○○○-
1.51.8 2.5 3.03.35.09.0 12.0 16.0
○○○○○○○○○
Output voltage (V)
Output voltage (V)
●Packages W (Typ.) x D (Typ.) x H (Max.)
HRP5 9.395mm x 10.54mm x 2.005mm
TO252-3 6.50 mm x 9.50mm x 2.50 mm
TO252-5 6.50 mm x 9.50mm x 2.50 mm
TO220FP-3 10.00 mm x 30.50mm x 4.60 mm
TO220FP-5 10.00 mm x 30.50mm x 4.60 mm
HRP5
TO252-3
TO220FP-5
Package
TO220FP-3
TO252-5
TO220FP-5 TO220FP-3
Package
○Product structure : Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays.
www.rohm.com
1 CTL Output voltage ON/OFF control
2 Vcc Power supply voltage input
3 N.C./GND Unconnected terminal/GND*1
4 OUT Voltage output
5 N.C. Unconnected terminal
Fin GND GND*2
1
*
TO252-5=N.C.,TO220FP-5,HRP5=GND
2
*
TO252-5,HRP5 only
1 2 3 4 5
TO220FP-5
1 2 3 4 5
TO252-5
1 2 3 4 5
HRP5
BAxxCC0T/ BAxxCC0FP/ BAxxDD0T
TOP VIEW
1
TO252-3
FIN
2
3
1
2 3
TO220FP-3
Vref
Vcc
1
OVPTSDOCP
Fin
2
N.C.
(TO252-3)
GND
(TO220FP-3)
Fig.2
GND(TO252-3)
Vcc
Driver
R2
R1
3
OUT
PIN No. Pin NameFunction
1 Vcc Power supply voltage input
2 N.C./GND Unconnected terminal/GND*1
3 OUT Voltage output
2000(TO220FP-3,5)
Operating Temperature Range Topr -40 to +125 ℃
Ambient Storage Temperature Tstg -55 to +150 ℃
Junction Temperature Tj
+150 ℃
MAX.
Output Control Terminal Voltage*3 Vctl -0.3 to +Vcc V
Voltage Applied to the Tip *4 VCC peak +50 V
*1 Must not exceed Pd
*2 HRP5 : In cases in which Ta≧25℃ when a 70mm×70mm×1.6mm glass
epoxy board is used, the power is reduced by 18.4 mW/℃. TO252FP-3 : In cases in which Ta≧25℃ when a 70mm×70mm×1.6mm glass
epoxy board is used, the power is reduced by 9.6 mW/℃. TO252FP-5 : In cases in which Ta≧25℃ when a 70mm×70mm×1.6mm glass
epoxy board is used, the power is reduced by 10.4 mW/℃. TO220FP-5 : No heat sink. When Ta≧25℃, the power is reduced by 16 mW/℃.
*3 Only for models with shutdown switches.
*4 Applied voltage : 200msec or less (tr≥1msec)
50V
35V
0V
●Recommended Operating Ratings (Ta=25℃)
Parameter Symbol
Input
Power Supply
Voltage
Output Current
BAxxCC0xx
BAxxDD0xx 3.0 ― 25.0 V
BAxxCC0xx
BAxxDD0xx ―
BAxxCC0 Series (Unless otherwise specified, Ta=25℃, V
Parameter Symbol
Output Voltage *6 Vo
Min. Typ. Max.
Vo(T)×
0.98
CTL=5V, Io=500mA Setting
Limit
Vo(T)
Vo(T)×
1.02
Unit Conditions
V
*5)
Shut Down Current Isd - 0 10 μA VCTL=0V
Bias Current Ib
-
2.5 5.0 mA VCTL=2V, Io=0mA
Dropout Voltage ΔVd - 0.3 0.5 V Vcc=Vo×0.95
Peak Output Current Io 1.0
Ripple Rejection R.R. 45 55 - dB
Line Regulation Reg.I
-
- -
A
f=120Hz,
Io=100mA
20 100 mV
Vcc=Vo(T)+1→25V
ein
=1Vrms,
Load Regulation Reg.L - 50 150 mV Io=5mA→1A
Temperature Coefficient of
Output Voltage
*8
Tcvo
-±0.02-%/℃ Io=5mA,Tj=0 to 125℃
Output Short Current Ios - 0.40 - A Vcc=25V
ON Mode Voltage VthH 2.0
--
V ACTIVE MODE, Io=0mA
OFF Mode Voltage VthL - -0.8 V OFF MODE, Io=0mA
Input High Current ICTL 100 200 300 μA VCTL=5V, Io=0mA
BAxxDD0 series (Unless otherwise specified, Ta=25℃, VCTL=3V, Vcc=VCCT*9)
Parameter Symbol
Shut Down Current Isd
Bias Current Ib - 0.9 2.0 mA Io=0mA
Output Voltage
Dropout Voltage 1
Dropout Voltage 2
Peak Output Current Io 2.0
Ripple Rejection R.R. - 55 - dB f=120Hz, ein*7=-20dBV, Io=100mA
Line Regulation Reg.I
Load Regulation Reg.L - 50 200 mV Io=0mA→2A
Temperature Coefficient of
Output Voltage
CTL ON Mode Voltage Von 2.0 -Vcc V ACTIVE MODE, Io=0mA
CTL OFF Mode Voltage Voff - -0.8 V OFF MODE, Io=0mA
CTL Input Current ICTL- 60 120 μA VCTL=3V, Io=0mA
When using at temperatures over Ta=25℃, please refer to the heat reducing characteristics shown in Fig.29 through 31.
The IC characteristics are closely related to the temperature at which the IC is used and if the temperature exceeds the
maximum junction temperature Tj
MAX., the elements may be damaged or destroyed. From the standpoints of instantaneous
destruction and long-term operating reliability, it is necessary give sufficient consideration to IC heat. In order to protect the
IC from thermal damage, it is necessary to operate it at temperatures lower than the maximum junction temperature TjMAX
of the IC.
Fig.30 shows the acceptable loss and heat reducing characteristics of the TO220FP package The portion shown by the
diagonal line is the acceptable loss range that can be used with the IC alone. Even when the ambient temperature Ta is a
normal temperature (25℃), the chip (junction) temperature Tj may be quite high so please operate the IC at temperatures
less than the acceptable loss Pd.
The method of calculating the power consumption Pc (W) is as follows.
Pc = (Vcc-Vo) × Io + Vcc × Icca
Acceptable loss Pd≦Pc
Vcc:
Input voltage
Vo:
Output voltage
Io:
Load current
Vcca:
Circuit current
Solving this for load current I
Io≦
(Please refer to Fig.10 and 22 for Icca.)
Pd – Vcc×Icca
Vcc-Vo
It is then possible to fin d the maxi mu m load cu r rent Io
in order to operate within the acceptable loss:
O
MAX with respect to the applied volt age Vcc at the ti me of therma l design .
・Calculation Example
Example 1) When Ta=85℃, Vcc=8.3V, Vo=3.3V, BA33DD0WT
1.04-8.3×Icca
Io≦ With the IC alone : θja=62.5℃/W → -16mW/℃
5
Io≦200mA (Icca : 2mA) 25℃=2000mW → 85℃=1040mW
Please refer to the above information and keep thermal designs within the scope of acceptable loss for all oper ating
temperature ranges.
The power consumption Pc of the IC when there is a short circuit (short between Vo and GND) is:
Pc=Vcc×(Icca+Ishort)
*Ishort: Short circuit current
●Peripheral Circuit Considerations
・Vcc Terminal
Please attach a capacitor (greater than 0.33µF) between the Vcc and GND.
The capacitance values will differ depending on the application, so please t ake this in to acco unt w hen configuring the termin al.
・GND Terminal
Please be sure to keep the set ground and IC ground at the same potential lev el so that a potential difference does not
arise between them.
If a potential difference arises between the set ground and the IC ground, the preset voltage will not be outputted,
causing the system to become unstable. Therefore, please reduce the impedance b y making the grou nd patterns as wide
as possible and by reducing the distance between the set ground and the IC ground as much as possible.
・CTL Terminal
The CTL terminal is turned ON at 2.0V and higher and OFF at 0.8V and low er wi thin the operating pow er supply volt age range.
The power supply and the CTL terminal may be started up and shut down in any order without problems.
Please attach an anti-oscillation capacitor between V
o and GND. The capacitance of the capacitor may significantly change
due to factors such as temperature changes, making it impossible to completely stop oscillations. Please use a tantalum
capacitor or aluminum electrolysis capacitor with favorable characteristics and small internal series resistance (ESR) even
at low temperatures. The output fluctuates regardless of whether the ESR is large or small. Please use the IC within the
stable operating region while referring to the ESR characteristics reference data shown in Fig.32 through 34. In applications
where there are sudden load fluctuations, the use of a capacitor with large capacitance is recommended.
A built-in over-current protection circuit correspond ing to the current capacity pr events the destruction of the IC when there
are load shorts. This protection circuit is a “7”-shap ed curren t control circuit that is designed such that the current is restricted
and does not latch even when a large current momentarily flows through the system with a high-capacitance capacitor.
However, while this protection circuit is e ffective f or the prevention of destruction due to unexpected accidents, it is not
suitable for continuous operation or transient use. Please be aware when creating thermal designs that the overcurrent
protection circuit has negative current capacity characteristics with regard to temperature (Refer to Fig.6 and 18).
Thermal Shutdown Circuit (Thermal Protection)
This system has a built-in temperature protection circuit for the purpose of protecting the IC from thermal damage.
As shown above, this must be used within the range of acceptable loss, but if the acceptable loss happens to be
continuously exceeded, the chip temperature Tj increases, causing the temperature protection circuit to operate.
When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes op eration
immediately after the chip temperature Tj decreases, so the output repeats the ON and OFF states (Please refer to
Fig.14 and 26 for the temperatures at which the temperature protection circuit operates).
There are cases in which the IC is destroyed due to thermal runaway when it is left in the ov erloaded state. Be sure to
avoid leaving the IC in the overloaded state.
Reverse Current
In order to prevent the destruction of the IC when a reverse current flows through the IC, it is recommended that a diode
be placed between the Vcc and Vo and a pathway be created so that the current can escape (Refer to Fig.35).
Reverse current
Vcc
CTL
OUT
GND
Fig.35 Bypass diode
2) This IC is bipolar IC that has a P-board (substrate) and P+ isolation la yer between each devise, as shown in Fig.36. A
P-N junction is formed between this P-layer and the N-layer of each device, and the P-N junction operates as a parasitic
diode when the electric potential relationship is GND> Pin A, GND> Pin B, while it operates as a parasitic transistor when
the electric potential relationship is Pin B GND> Pin A. Parasitic devices are structurally inevitable in the IC. The
operation of parasitic devices induces mutual interference between circuits, causing malfunctions and eventually the
destruction of the IC. It is necessary to be careful not to use the IC in ways that would cause parasitic elements to
operate. For example, applying a voltage that is lower than the GND (P-board) to the input terminal.
(Pin A)
Resistor
P+
N
P
N
P+
P
Parasitic element
GND
N
Fig.36 Example of the basic structure of a bipolar IC
Transistor (NPN)
(Pin B)
C
P+
N
Parasitic element
or transistor
B
E
P
N
N
P
GND
GND
P+
N
(Pin B)
(Pin A)
C
B
E
GND
GND
Parasitic element
or transistor
Parasitic element
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this doc
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H
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