ROHM 2SD2170 Schematic [ru]
*
*
*
*
*
Medium Power Transistor
+20
(Motor, Relay drive) (90 , 2A)
2SD2170
zFeatures
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to "L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1
Single pulse Pw=10ms,Duty=1/2
∗2
When mounted on a 40 x 40 x 0.7 mm ceramic board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
zPackaging specifications and hFE zEquivalent circuit
Type 2SD2170
Package
h
FE
Marking
Basic ordering unit (pieces)
Code
MPT3
1k to 10k
DM
T100
1000
Limits
+20
90
−10
+20
90
−10
6
2
3
∗1
0.5
∗2
2
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
−10
zDimensions (Unit : mm)
ROHM : MPT3
EIAJ : SC-62
B
E
: Emitter
B
: Base
C
: Collector
0.4
1.5
3.0
1.5
0.4
R
2
R
1
R
1
3.5kΩ
2
300 Ω
R
4.0
1.0
2.5
0.5
(1)
(2)
1.6
0.5
(3)
0.4
4.5
(1) Base
1.5
(2) Collector
(3) Emitter
C
E
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
1 Measured using pulse current.
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
BV
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
f
T
Cob
2 Transition frequency of the device.
80
80
-
-
- - 1.5 V IC/IB = 1A/1mA
1000
FE
-
-
110
110
-
-
-
10000
-
80
25
V
I
C
= 50µA
V
I
C
= 1mA
µA
10
3
-
-
mA
MHz
pF
V
CB
= 70V
V
EB
= 5V
-
V
CE
= 2V , IC = 1A
V
CE
= 5V , IE = −0.1A , f = 30MHz
V
CB
= 10V , IE = 0A , f = 1MHz
1
1
2
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c
○
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.02 - Rev.B
V)
n
F
nt
V)
e
)
0
)
e
Fig.6 Safe operating area
0
2SD2170
zElectrical characteristic curves
2.0
Ta=25°C
(A)
1.6
C
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter output
characteristics
5
(
CE(sat)
2
1
0.5
0.2
0.1
COLLECTOR SATURATION VOLTAGE : V
Fig.4 Collector-emitter saturation voltag
vs. collector current
1.0mA
0.9mA
0.8mA
0.7mA
COLLECTOR CURRENT : I
0.6mA
0.5mA
0.4mA
IB=0.3mA
Ta=25°C
IC/IB=1000
C
(A)
523410
CE
(
500
5120.05 0.1 0.2 0.50.020.01
5
2
1
(A)
C
0.5
0.2
0.1
0.05
0.02
0.01
0.005
COLLECTOR CURRENT : I
0.002
0.001
BASE TO EMITTER VOLTAGE : V
Ta=25°C
VCE=2V
BE
Fig.2 Grounded emitter propagatio
characteristics
200
100
50
20
10
5
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
COLLECTOR TO BASE VOLTAGE : V
Fig.5 Collector output capacitanc
vs. collector-base voltage
10 200.5 1 2 50.1
31.51 2 2.50.50
(V)
Ta=25°C
f=1MHz
IE=0A
CB
(V
5
10000
Ta=25°C
5000
2000
FE
1000
500
200
100
DC CURRENT GAIN : h
50
20
ig.3 DC current gain vs. collector curre
10
1
0.1
IC (A)
0.01
Ta=25°C
∗Single
Nonrepetitive
Pulse
0.001
VCE=4V
COLLECTOR CURRENT : I
1m
10ms
P
w
=
1
0
0
m
s
DC
∗
10 10010.1
V
CE
(V)
Data Sheet
2V
5120.02 0.05 0.1 0.2 0.50.010.005
C
(A)
s
∗
∗
100
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.02 - Rev.B
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