ROHM 2SD2114S, 2SD2114K Datasheet

2SD2114K / 2SD2144S

Transistors

High-current Gain Medium
Power T ransistor (20V, 0.5A)

2SD21 14K / 2SD2144S

zFeatures

1) High DC current gain.
h

FE

= 1200 (Typ.)

2) High em i tter-base vol tage.
V

EBO

=12V (Min.)

3) Low V

CE (sat).

VCE

(sat)

= 0.18V (Typ.)

(I

C

/ IB = 500mA / 20mA)

zStructure

Epitaxial planar ty pe
NPN silicon transistor

zExternal dimensions (Units : mm)

2SD2144S

2SD2114K

(1) Emitter
(2) Collector
(3) Base

ROHM : SPT
EIAJ : SC-72

0∼0.1

2.8±0.2

1.6

0.3∼0.6

1.1

0.8±0.1

0.15

0.4

2.9±0.2

1.9±0.2

0.95

0.95

+0.2

−0.1

−0.1

+0.2

+0.1

−0.06

+0.1

−0.05

(2)

(1)

(3)

(1) Emitter
(2) Base
(3) Collector

ROHM : SMT3
EIAJ : SC-59

Abbreviated symbol: BB

∗

All terminals have same dimensions

∗

Denotes h

FE

3

±

0.2(15Min.)

4±0.2 2±0.2

0.45

0.5

0.45

5

(1)

(2) (3)

−

0.05

+

0.15

+

0.15

−

0.05

2.5

+

0.4

−

0.1

3Min.

zAbsolute maximum ratings (T a=2 5°C)

Parameter

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj

Tstg

25 V

V
V

A(DC)

W

°C
°C

20
12

0.5
A(Pulse)1

∗

0.2

0.3

150

−55∼+150

Symbol Limits Unit

∗

Single pulse Pw=100ms

2SD2114K
2SD2144S

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power
dissipation

Junction temperature
Storage temperature

2SD2114K / 2SD2144S

Transistors

zElectrical c har acteri stics (Ta=25°C)

Parameter Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

f

T

∗

Cob

Min.

25
20
12

−

−

560

−

−

−

−

−

−

−

−

−

0.18

350

8.0

−

−

−

0.5

0.5

2700

0.4

−

−

VI

C

=10µA

I

C

=1mA

I

E

=10µA

V

CB

=20V

V

EB

=10V

I

C/IB

=500mA/20mA

V

CE

=10V, IE=−50mA, f=100MHz

V

CB

=10V, IE=0A, f=1MHz

V
V

µA
µA

−

h

FE

820

2SD2144S

2SD2114K − 2700

V

CE

=3V, IC=10mA

−

V

MHz

pF

Ron − 0.8 − I

B

=1mA, Vi=100mV(rms), f=1kHzpF

Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency
Output capacitance
Output On-resistance

∗

Measured using pulse current

z

Packaging specifications and h

FE

Package
Code T146 TP

3000 5000

−

−

Taping

Basic ordering
unit (pieces)

VW

h

FE

UVW

2SD2114K
2SD2144S

Type

h

FE

values are classified as follows :

Item U

h

FE

560∼1200V820∼1800W1200∼2700

zElectrical c har acteri stic curv es

0

0.4

0.8

1.2

1.6

2.0

0 0.1 0.2 0.3 0.4 0.5

Ta=25˚C

0.2µA

0.4µA

0.6µA

0.8µA

1.0µA

1.2µA

1.4µA

1.6µA

I

B

=0

1.8µA

2.0µA

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.1 Grounded emitter output

characteristics(Ι)

0

200

400

600

800

1000

0246810

Ta=25°C

Measured using
pulse current.

0.2mA

0.4mA

0.6mA

0.8mA

1.0mA

1.2mA

1.4mA

1.6mA

1.8mA 2.0mA

I

B

=0mA

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.2 Grounded emitter output

characteristics(ΙΙ)

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

1

2

5

10

20

50

100

200

500

1000

COLLECTOR CURRENT : I

C

(mA)

BASE TO EMITTER VOLTAGE : V

BE

(V)

Fig.3 Grounded emitter propagation

characteristics

VCE=

3V

Measured using
pulse current.

25°C

−25°C

Ta=100°C