ROHM 2SD2114K Technical data
High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K
Features Dimensions (Unit : mm)
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low V
V
(I
CE (sat).
CE (sat) = 0.18V (Typ.)
C / IB = 500mA / 20mA)
Structure
Epitaxial planar type
NPN silicon transistor
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Single pulse Pw=100ms
∗
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Electrical characteristics (Ta=25C)
Parameter Symbol
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
Cob
Ron
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current
∗
25 V
20
12
0.5
0.2
150
−55 to +150
Min.
25
20
12
−
−
−
820
−
∗
−
−
A(DC)
A(Pulse)1
Typ. Max. Unit Conditions
−
−
−
0.5
−
0.5
−
0.18
0.4
2700
−
350
8.0
0.8
2SD2114K
ROHM : SMT3
EIAJ : SC-59
Denotes h
∗
V
V
∗
W
°C
°C
V
−
V
−
V
−
μA
μA
V
MHz
−
pF
−
Ω
− I
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(1)
−0.1
+0.2
2.8±0.2
1.6
(3)
+0.1
0.4
−0.05
All terminals have same dimensions
Abbreviated symbol: BB
FE
I
C
=10μA
I
C
=1mA
I
E
=10μA
V
CB
=20V
V
EB
=10V
I
C/IB
=500mA/20mA
V
CE
=3V, IC=10mA−
V
CE
=10V, IE= −50mA, f=100MHz
CB
=10V, IE=0A, f=1MHz
V
B
=1mA, Vi=100mV(rms), f=1kHz
0.15
1.1
+0.1
−0.06
∗
+0.2
−0.1
0.8±0.1
0∼0.1
0.3∼0.6
(1) Emitter
(2) Base
(3) Collector
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○c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.C
0
0
2SD2114K
Data Sheet
Packaging specifications and h
Package
Code T146
Basic ordering
Type
2SD2114K
h
FE
VW
unit (pieces)
FE values are classified as follows :
h
Item
FE
h
V
820 to 1800W1200 to 2700
Electrical characteristic curves
2.0
Ta=25°C
2.0μA
(mA)
1.6
C
1.8μA
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
0 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter output
characteristics ( )
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : I
1.6μA
1.4μA
1.2μA
1.0μA
0.8μA
0.6μA
0.4μA
0.2μA
I
B
Ta=25°C
Measured using
pulse current.
CE
=5V
V
3V
1V
C
(mA)
=0
CE
(V)
FE
Taping
3000
1000
1.8mA 2.0mA
1.6mA
1.4mA
(mA)
800
C
600
400
200
COLLECTOR CURRENT : I
0
0246810
COLLECTOR TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter output
characteristics ( )
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
1 2 5 10 20 50 100 200 500100
Ta=100°C
−25°C
COLLECTOR CURRENT : I
I
25°C
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
B
=0mA
1.2mA
Ta=25°C
Measured using
pulse current.
VCE=3V
Measured using
pulse current.
C
(mA)
1000
500
(mA)
Ta=100°C
200
C
100
50
20
10
COLLECTOR CURRENT : I
CE
(V)
25°C
−25°C
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : V
VCE=3V
Measured using
pulse current.
BE
(V)
Fig.3 Grounded emitter propagation
2000
(mV)
1000
CE(sat)
COLLECTOR SATURATION VOLTAGE : V
characteristics
500
200
100
50
IC/IB=100
50
20
25
10
10
5
2
1
2 5 10 20 50 10 0 200 500 1000
COLLECTOR CURRENT : I
Ta=25°C
Measured using
pulse current.
C
(mA)
Fig.4 DC current gain vs. collector
current ( )
Fig.5 DC current gain vs.
collector current ( )
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
100
Ta=25°C
Pulsed
25
50
C
(mA)
10000
(mV)
5000
BE(sat)
BASE SATURATION VOLTAGE : V
Ta=−25°C
2000
1000
500
200
100
50
20
10
25°C
100°C
1 2 5 10 20 50 100 200 500100
COLLECTOR CURRENT : I
C/lB
=10
l
Measured using
pulse current.
C
(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( )
2012.01 - Rev.C
2000
(mV)
1000
CE(sat)
500
200
100
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
50
20
10
5
2
1
25°C
−25°C
2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
I
C/IB
=25
Measured using
pulse current.
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( )
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○c 2012 ROHM Co., Ltd. All rights reserved.
10000
(mV)
5000
BE(sat)
2000
1000
500
200
100
50
20
10
BASE SATURATION VOLTAGE : V
IC/IB=10
1 2 5 10 2 0 50 100 200 5 001000
COLLECTOR CURRENT : I
Fig.8 Base-emitter saturation
voltage vs. collector current ( )
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