High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K
Features Dimensions (Unit : mm)
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low V
V
(I
CE (sat).
CE (sat) = 0.18V (Typ.)
C / IB = 500mA / 20mA)
Structure
Epitaxial planar type
NPN silicon transistor
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Single pulse Pw=100ms
∗
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Electrical characteristics (Ta=25C)
Parameter Symbol
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
Cob
Ron
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current
∗
25 V
20
12
0.5
0.2
150
−55 to +150
Min.
25
20
12
−
−
−
820
−
∗
−
−
A(DC)
A(Pulse)1
Typ. Max. Unit Conditions
−
−
−
0.5
−
0.5
−
0.18
0.4
2700
−
350
8.0
0.8
2SD2114K
ROHM : SMT3
EIAJ : SC-59
Denotes h
∗
V
V
∗
W
°C
°C
V
−
V
−
V
−
μA
μA
V
MHz
−
pF
−
Ω
− I
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(1)
−0.1
+0.2
2.8±0.2
1.6
(3)
+0.1
0.4
−0.05
All terminals have same dimensions
Abbreviated symbol: BB
FE
I
C
=10μA
I
C
=1mA
I
E
=10μA
V
CB
=20V
V
EB
=10V
I
C/IB
=500mA/20mA
V
CE
=3V, IC=10mA−
V
CE
=10V, IE= −50mA, f=100MHz
CB
=10V, IE=0A, f=1MHz
V
B
=1mA, Vi=100mV(rms), f=1kHz
0.15
1.1
+0.1
−0.06
∗
+0.2
−0.1
0.8±0.1
0∼0.1
0.3∼0.6
(1) Emitter
(2) Base
(3) Collector
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○c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.C
0
0
2SD2114K
Data Sheet
Packaging specifications and h
Package
Code T146
Basic ordering
Type
2SD2114K
h
FE
VW
unit (pieces)
FE values are classified as follows :
h
Item
FE
h
V
820 to 1800W1200 to 2700
Electrical characteristic curves
2.0
Ta=25°C
2.0μA
(mA)
1.6
C
1.8μA
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
0 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter output
characteristics ( )
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : I
1.6μA
1.4μA
1.2μA
1.0μA
0.8μA
0.6μA
0.4μA
0.2μA
I
B
Ta=25°C
Measured using
pulse current.
CE
=5V
V
3V
1V
C
(mA)
=0
CE
(V)
FE
Taping
3000
1000
1.8mA 2.0mA
1.6mA
1.4mA
(mA)
800
C
600
400
200
COLLECTOR CURRENT : I
0
0246810
COLLECTOR TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter output
characteristics ( )
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
1 2 5 10 20 50 100 200 500100
Ta=100°C
−25°C
COLLECTOR CURRENT : I
I
25°C
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
B
=0mA
1.2mA
Ta=25°C
Measured using
pulse current.
VCE=3V
Measured using
pulse current.
C
(mA)
1000
500
(mA)
Ta=100°C
200
C
100
50
20
10
COLLECTOR CURRENT : I
CE
(V)
25°C
−25°C
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : V
VCE=3V
Measured using
pulse current.
BE
(V)
Fig.3 Grounded emitter propagation
2000
(mV)
1000
CE(sat)
COLLECTOR SATURATION VOLTAGE : V
characteristics
500
200
100
50
IC/IB=100
50
20
25
10
10
5
2
1
2 5 10 20 50 10 0 200 500 1000
COLLECTOR CURRENT : I
Ta=25°C
Measured using
pulse current.
C
(mA)
Fig.4 DC current gain vs. collector
current ( )
Fig.5 DC current gain vs.
collector current ( )
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
100
Ta=25°C
Pulsed
25
50
C
(mA)
10000
(mV)
5000
BE(sat)
BASE SATURATION VOLTAGE : V
Ta=−25°C
2000
1000
500
200
100
50
20
10
25°C
100°C
1 2 5 10 20 50 100 200 500100
COLLECTOR CURRENT : I
C/lB
=10
l
Measured using
pulse current.
C
(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( )
2012.01 - Rev.C
2000
(mV)
1000
CE(sat)
500
200
100
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
50
20
10
5
2
1
25°C
−25°C
2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
I
C/IB
=25
Measured using
pulse current.
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( )
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○c 2012 ROHM Co., Ltd. All rights reserved.
10000
(mV)
5000
BE(sat)
2000
1000
500
200
100
50
20
10
BASE SATURATION VOLTAGE : V
IC/IB=10
1 2 5 10 2 0 50 100 200 5 001000
COLLECTOR CURRENT : I
Fig.8 Base-emitter saturation
voltage vs. collector current ( )
0
2SD2114K
Data Sheet
10000
5000
(MHz)
T
2000
1000
500
200
100
50
20
TRANSITION FREQUENCY : f
10
−1 −2 −5 −10 −20 −50
EMITTER CURRENT : I
Ta=25°C
VCE=
10V
Measured using
pulse current.
−100 −200 −500 −100
E
(mA)
Fig.10 Gain bandwidth product vs.
emitter current
Ron measurement circuit
RL=1kΩ
Input
v
i
1kHz
100mV(rms)
Ron= ×R
vi−v
I
v
0
0
1000
(pF)
500
200
100
50
20
10
5
2
1
COLLECTOR OUTPUT CAPACITANCE : Cob
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : V
Ta=25°C
f
=1MHz
IE=0A
CB
(V)
Fig.11 Collector output capacitance
vs. collector-base voltage
100
50
(Ω)
20
10
5
2
1
0.5
ON RESISTANCE : Ron
0.2
0.1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
BASE CURRENT : I
Ta=25°C
f=1kHz
Vi=100mV(
RL=1kΩ
B
(mA)
Fig.12 Output-on resistance vs.
base current
rms)
B
L
V
Output
v
0
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○c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.C
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"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specied herein is intended only to show the typical functions of and
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R1120A
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