ROHM 2SD2098, 2SD2118 Schematic [ru]
2SD2098 / 2SD2118
Transistors
Low VCE(sat) transistor (strobe flash)
2SD2098 / 2SD21 18
zFeatures
1) Low V
CE(sat).
V
CE(sat) = 0.25V (Typ.)
(I
C/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1386 / 2SB1412.
zStructure
Epitaxial planar type
NPN silicon transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
Collector power
dissipation
Junction temperature Tj 150
Storage temperature Tstg −55 to +150
∗1 Single pulse Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
2SD2098
2SD2118
I
P
CBO
CEO
EBO
I
C
CP
50 V
20 V
6V
5 A(DC)
10
0.5
C
2
1
10
zDimensions (Unit : mm)
2SD2098
ROHM : MPT3
EIAJ : SC-62
Abbreviated symbol : DJ∗
2SD2118
ROHM : CPT3
EIAJ : SC-63
∗ Denotes h
W(Tc=25°C)
A(Pulse)
W
°C
°C
FE
∗1
∗2
(1) Base
(2) Collector
(3) Emitter
(1) Base
(2) Collector
(3) Emitter
Rev.B 1/4
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
zPackaging specifications and hFE
Package Taping
Code
Type
2SD2098
2SD2118QRQR
h
FE values are classified as follows :
Item
FE
h
FE
Q
120 to 270
Basic ordering unit (pieces)
R
180 to 390
2SD2098 / 2SD2118
Min.
Typ. Max. Unit Conditions
CBO
BV
BV
BV
V
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
Cob
50
20
120
6
−
−
−
−
−
T100
1000h
−
−
−
−
−
0.3
−
150
35
−
−
−
0.5
0.5
1.0
390
−
−
TL
2500
−
−
VI
I
V
I
V
V
µA
V
µA
V
I
V
−
V
MHz
V
pF
C
=50µA
C
=1mA
E
=50µA
CB
=40V
EB
=5V
C/IB
=4A/0.1A
CE
=2V, IC=0.5A
CE
=6V, IE=−50mA, f=100MHz
CE
=20V, IE=0A, f=1MHz
∗
∗
Rev.B 2/4
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