Datasheet 2SD2098, 2SD2118 Datasheet (ROHM) [ru]

2SD2098 / 2SD2118

Transistors

Low VCE(sat) transistor (strobe flash)

2SD2098 / 2SD21 18

zFeatures

1) Low V

CE(sat).

V

CE(sat) = 0.25V (Typ.)

(I

C/IB = 4A / 0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SB1386 / 2SB1412.

zStructure

Epitaxial planar type
NPN silicon transistor

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V

Collector current

Collector power
dissipation

Junction temperature Tj 150
Storage temperature Tstg −55 to +150

∗1 Single pulse Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.

2SD2098

2SD2118

I

P

CBO

CEO

EBO

I

C

CP

50 V
20 V

6V
5 A(DC)

10

0.5

C

2
1

10

zDimensions (Unit : mm)

2SD2098

ROHM : MPT3
EIAJ : SC-62

Abbreviated symbol : DJ∗

2SD2118

ROHM : CPT3
EIAJ : SC-63

∗ Denotes h

W(Tc=25°C)

A(Pulse)

W

°C
°C

FE

∗1

∗2

(1) Base
(2) Collector
(3) Emitter

(1) Base
(2) Collector
(3) Emitter

Rev.B 1/4

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

∗ Measured using pulse current.

zPackaging specifications and hFE

Package Taping
Code

Type
2SD2098
2SD2118QRQR

h

FE values are classified as follows :

Item

FE

h

FE

Q

120 to 270

Basic ordering unit (pieces)

R

180 to 390

2SD2098 / 2SD2118

Min.

Typ. Max. Unit Conditions

CBO

BV
BV
BV

V

CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

Cob

50
20

120

6

−

−

−

−

−

T100
1000h

−

−

−

−

−

0.3

−

150

35

−

−

−

0.5

0.5

1.0

390

−

−

TL

2500

−

−

VI

I

V

I

V

V

µA

V

µA

V

I
V

−

V

MHz

V

pF

C

=50µA

C

=1mA

E

=50µA

CB

=40V

EB

=5V

C/IB

=4A/0.1A

CE

=2V, IC=0.5A

CE

=6V, IE=−50mA, f=100MHz

CE

=20V, IE=0A, f=1MHz

∗

∗

Rev.B 2/4

Transistors

zElectrical characteristic curves

10

5
2

(A)

C

0.05

0.02

0.01

COLLECTOR CURRENT : I

Ta=100°C

1

0.5

0.2

0.1

5m
2m

1m

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

25°C

−25°C

BASE TO EMITTER VOLTAGE : V

Fig.1 Grounded emitter propagation

characteristics

5000

2000

FE

1000

500

200

100

50

DC CURRENT GAIN : h

20
10

5

1m

Ta=100°C

25°C

−25°C

2m5m0.010.020.050.10.2 0.5 1 2 5 10

COLLECTOR CURRENT : I

Fig.4 DC current gain vs.

collector current ( ΙΙ )

VCE=2V

BE

VCE=1V

C

(A)

(V)

5

50mA
45mA

(A)

C

4

3

2

1

COLLECTOR CURRENT : I

0

0 0.4 0.8 1.2 1.6 2.0

COLLECTOR TO EMITTER VOLTAGE : V

35mA

30mA

40mA

Fig.2 Grounded emitter output

characteristics

5000

2000

FE

1000

500

200
100

50

DC CURRENT GAIN : h

20
10

5

1m

Ta=100°C

25°C

−25°C

2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 5 10

COLLECTOR CURRENT : I

Fig.5 DC current gain vs.

collector current ( ΙΙΙ )

25mA

20mA

Ta=25°C

15mA

10mA

5mA

B

=0mA

I

VCE=2V

C

(A)

2SD2098 / 2SD2118

5000

2000

FE

1000

500

200
100

50

DC CURRENT GAIN : h

20
10

5
1m

2m 5m 0.010.02 0.050.1 0.2 0.5 1 2 5 10

CE

(V)

COLLECTOR CURRENT : I

Fig.3 DC current gain vs.

collector current ( Ι )

2

(V)

CE(sat)

1

0.5

0.2

0.1

0.05

IC/IB=50

0.02

0.01

COLLECTOR SATURATION VOLTAGE : V

40
30
10

5m 0.010.02 0.0 5 0.2 0.5 12m

COLLECTOR CURRENT : I

0.1

Fig.6 Collector-emitter

saturation voltage vs.
collector current ( Ι )

2V

Ta=25°C

C

Ta=25°C

VCE=5V

1V

C

(A)

2510

(A)

2

CE(sat) (V)

1

0.5

0.2

0.1

0.05

0.02

0.01

COLLECTOR SATURATION VOLTAGE : V

2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

COLLECTOR CURRENT : I

Ta=100°C

25°C

−25°C

lC/lB=10

C

(A)

Fig.7 Collector-emitter

saturation voltage vs.
collector current ( ΙΙ )

2

(V)

1

CE(sat)

0.5

0.2

0.1

0.05

0.02

0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Ta=100°C

−25°C

Fig.8 Collector-emitter

saturation voltage vs.
collector current ( ΙΙΙ )

25°C

lC/lB=30

C

(A)

2

(V)

1

CE(sat)

0.5

0.2

0.1

0.05

0.02

0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Ta=100°C

25°C

−25°C

Fig.9 Collector-emitter

saturation voltage vs.
collector current (IV)

lC/lB=40

C (A)

Rev.B 3/4

Transistors

2

(V)

1

CE(sat)

0.5
Ta=100°C

Pw=10ms

DC

−25°C

Pw=100µs

Pw=1ms

25°C

Ta=25(°C)
Single pulse
Recommended land
pattern

0.2

0.1

0.05

0.02

0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.10 Collector-emitter

saturation voltage vs.
collector current (V)

50
20

(A)

C

Ic max (Pulse)

10

500m
200m

100m

50m

COLLECTOR CURRENT : I

20m
10m

Pw=100ms

5
2

1

0.2 0.5 1 2 5 10 20 50100 500200

COLLECTOR TO EMITTER VOLTAGE : V

lC/lB=50

C (A)

1000

500

(MHz)

T

200
100

50

20
10

5

2

TRANSITION FREQUENCY : f

1

−1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1
EMITTER CURRENT : I

Fig.11 Gain bandwidth product vs.

emitter current

50
20

(A)

Ic max (Pulse)

C

10

Ic max (Pulse)

5
2

1

500m
200m

100m

50m

COLLECTOR CURRENT : I

20m
10m

0.2 0.5 1 2 5 10 20 50100 500200

CE

(V)

COLLECTOR TO EMITTER VOLTAGE : V

Pw=100ms

DC

Pw=10ms

Ta=25°C

V

CE

E

(A)

Ta=25 (°C)
Single pulse

=6V

2SD2098 / 2SD2118

1000

500

200

100

50

20

10

0.1 0.2 0.5 1 2 5 10 20 50

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER INPUT CAPACITANCE : Cib (pF)

COLLECTOR TO BASE VOLTAGE : VCB
EMITTER TO BASE VOLTAGE : VEB

Fig.12 Collector output capacitance vs.

collector-base voltage
Emitter input capacitance vs.
emitter-base voltage

CE

(V)

Ta=25°C
f=1MHz

IC

=0A

IE

=0A

Cib

Cob

(V)
(V)

Fig.13 Safe operating area

(2SD2098)

Fig.14 Safe operating area

(2SD2118)

Rev.B 4/4

Appendix

Notes

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Appendix1-Rev2.0