ROHM 2SD1980 Technical data
Power Transistor (100V, 2A)
2SD1980
Features Dimensions (Unit : mm)
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1316.
inner circuit
C
B
R1R
2
3.5kΩ
300Ω
E
B
: Base
C
: Collector
E
: Emitter
R
1
2
R
Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
1 Single pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
100
6
2
∗1
3 A(Pulse)
1
10
150
−55 to +150
Unit
V
V
V
A(DC)
W
W(Tc=25°C)
°C
°C
Packaging specifications and hFE
Type
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
Denotes h
FE
∗
2SD1980
CPT3
1k to 10k
−
TL
2500
Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltag
Base-Emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
BV
BV
BV
V
V
I
CBO
I
EBO
CE(sat)
BE(sat)
h
f
Cob
CBO
CBO
EBO
FE
T
100
−
100
−
6
−−
−
−
−
−
−−
−−
1000
−
80
−
25
−
−
−
10
3
1.5 V
2.0 V
10000
−
−
V
V
V
μA
mA
− V
MHz
pF
I
C
=
50μA
C
=
5mA
I
E
=
5mA
I
CB
=
100V
V
EB
=
5V
V
IC = 1A ,
C/IB
=
1A/1mA
I
CE
= 2V ,
CE
= 5V ,
V
CB
=
10V , IE = 0A , f =
V
IB =
1mA
IC =
1A
IE =
−0.1A , f = 30MHz
2SD1980
ROHM : CPT3
EIAJ : SC-63
∗
∗
1MHz
6.5
5.1
0.75
0.9
0.9
2.3
(1)
(3)
(2)
0.65
2.3
0.5
1.5
5.5
2.3
9.5
1.5
2.5
0.8Min.
0.5
1.0
(1) Base
(2) Collector
(3) Emitter
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2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.D
2SD1980
Data Sheet
Electrical characteristic curves
2.0
Ta=25°C
(A)
1.6
C
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
1mA
=0.3mA
B
I
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
523410
CE
(V)
Fig.1 Grounded emitter output
characteristics
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
0.001 0.002 0.005 0.01 0.02 0.05
COLLECTOR CURRENT : IC (A)
Ta=100°C
0.1 0.2 0.5 1 2 5 10
VCE=2V
25°C
−25°C
10
5
(A)
2
C
1
0.5
0.2
0.1
0.05
COLLECTOR CURRENT : I
0.02
0.01
BASE TO EMITTER VOLTAGE : V
Ta=100°C
VCE=2V
25°C
−25°C
2.6 3.01.41.0 1.8 2.20.60.2
BE
(V)
Fig.2 Grounded emitter propagation
10000
Ta=25°C
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
COLLECTOR CURRENT : I
2V
C
(A)
VCE=4V
1010.10.010.001
Fig.3 DC current gain vs. collector current
characteristics
100
(V)
50
CE(sat)
20
10
5
2
1
0.5
0.2
0.1
COLLECTOR SATURATION VOLTAGE : V
0.0.1
0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Ta=25
IC/IB=1000
500
°C
100
(V)
50
CE(sat)
20
10
5
2
1
0.5
0.2
0.1
COLLECTOR SATURATION VOLTAGE : V
0.0.1
0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
25
IC/IB=1000
Ta=−25
°C
°C
100
°C
Fig.4 DC current gain vs. collector current
1000
500
200
100
50
20
10
5
2
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1
0.1
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Ta=25°C
f=1MHz
E
=0A
I
Fig.5 Collector-emitter saturation voltage
vs.collector current
Fig.6 Collector-emitter saturation voltage
vs.collector current
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2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.D
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