ROHM 2SD1963 Schematic [ru]

Transistors

Power transistor (50V, 3A)

2SD1963

zFeatures zExternal dimensions (Unit : mm)

1) Low saturation voltage, typically
V

CE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A.

2) Excellent DC current gain characteristics.

3) Complements the 2SB1308.

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation
Junction temperature

Storage temperature

1 Single pulse, Pw=10ms

∗

2 When mounted on a 40×40×0.7mm ceramic board.

∗

Symbol Limits Unit

V

CBO

V

CEO

V

EBO

C

I

P

C

Tj

Tstg

zElectrical characteristics (Ta=25°C)

Parameter Symbol

CBO

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Measured using pulse current.

∗

BV
BV
BV

V

CEO

EBO

I

CBO

I

EBO

h

FE

CE(sat)

f

T

Cob

50 V
20

6
3
5

0.5

2.0

150

−55 to 150

Min.

Typ. Max. Unit Conditions

50

−

20

−

6

−

−

−

−

−

180

−

−

0.25

−

150

−

35

MPT3

(1)Base
(2)Collector
(3)Emitter

A(DC)

A(Pulse)

−

−

−

0.5

0.5

560

0.45

−

−

V
V

W
W

°C
°C

VI
V
V

µA
µA

−

V

MHz

pF

4.5

1.6

(1)

1

∗

2

∗

(3)(2)

0.5

1.51.5

3.0

C

=50µA

C

= 1mA

I

E

= 50µA

I

CB

=40V

V

EB

=5V

V

CE

=2V, IC=0.5A

V
I

C/IB

=1.5A/ 0.15A

CE

=6V, IE= −50mA, f=100MHz

V

CB

=20V, IE=0A, f=1MHz

V

0.40.4

2SD1963

1.5

0.5

2.5

4.0

1.0

0.4

∗
∗

Rev.A 1/2

Transistors

zPackaging specifications and h

Type

Package

FE

h

Marking

Code

Basic ordering unit (pieces)

∗ Denotes h

FE

zElectrical characteristic curves

10

V

CE

=

−2V

5
2

(A)

C

COLLECTOR CURRENT : I

Fig.1 Grounded emitter propagation

Ta=100

1

0.5

0.2

0.1

0.05

0.02

0.01
5m

2m
1m

0 1.41.21.00.80.60.4

BASE TO EMITTER VOLTAGE : VBE

°C

25

°C

−

25°C

0.2

characteristics

2SD1963

MPT3

FE

RS

DG∗
T100
1000

(V)

5000

2000

FE

1000

500

200
100

50

DC CURRENT GAIN : h

20
10

5

1m 5m 0.01 0.05 1 2 5 102m

Ta=100

0.02 0.1 0.50.2

COLLECTOR CURRENT : I

Fig.2 DC current gain vs.

collector current

−

25

2SD1963

2

V

CE

=

2V

°C

°C

25

°C

C

(A)

(V)

CE(sat)

1

0.5

0.2

0.1

0.05

0.02

0.01

COLLECTOR SATURATION VOLTAGE : V

0.01 0.02 0.1 0.2 0.50.052m 5m

COLLECTOR CURRENT : I

°C

100

=

Ta

25

= −

Ta

°C

25

=

Ta

12 510

Fig.3 Collector-emitter saturation

voltage vs. collector current

lC/lB=40

C

°

C

(A)

Rev.A 2/2