ROHM 2SD1949, 2SD1484K Technical data
Medium Power Transistor (50V,0.5A)
Medium Power Transistor (50V,0.5A)
2SD1949 / 2SD1484K
2SD1484K
2SD1949
Features Dimensions (Unit : mm)
1) High current.(I
2) Low saturation voltage, typically V
C=0.5A)
CE(sat)=0.1V at IC / IB=150mA / 15mA.
UMT3
(SC-70)
<SOT-323>
(1) Emitter
(2) Bace
(3) Collector
Absolute maximum rationgs (Ta=25 C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
PC
Tj
Tstg
Limits
50
50
5
0.5
0.2
150
−55 to +150
Unit
V
V
V
A
W
C
C
SMT3
(SC-59)
<SOT-346>
(1) Emitter
2.9
(3)
(2)
0.95 0.95
1.9
0.4
(2) Bace
(3) Collector
Data Sheet
1.1
0.8
1.6
2.8
(1)
0.15
0.3Min.
Electrical characteristics (Ta=25 C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
DC current rransfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Packaging specifications and h
Type
Package
h
FE
Marking
Code
Basic ordering unit (pleces)
Danotes hFE
FE values are classified as follows :
h
Item Q R
h
FE 120 to 270 180 to 390
2SD1949
UMT3
QR
Y Y
T106
3000
Symbol Min. Typ. Max.
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
FE
50
50
120
−
−
5
−
−
−
−
−
−
−−
250
−
6.5
−
2SD1484K
SMT3
QR
T146
3000
Unit Conditions
−
−
−
0.5
0.5
390
0.4
−
−
I
V
C
V
I
C
I
V
E
V
µA
µA
V
V
−
VI
V
MHz
V
pF
=
100µA
=
1mA
=
100µA
=
30V
CB
=
4V
EB
=
CE/IC
=
150mA/15mA
C/IB
=
5V , I
CE
=
10V , I
CB
3V/10mA
=
−20mA , f=100MHz
E
=
0A , f=1MHz
E
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 -
Rev. E
2SD1949
2SD1949 / 2SD1484K
2SD1484K
Electrical characteristic curves
Electrical characteristic curves
200
100
VCE=6V
50
20
10
5
2
Ta= 100 C
25 C
25 C
-
1
0.5
COLLECTOR CURRENT : IC (mA)
0.2
0.1
0.20 0.4 0.80.6 1.21.0
BASE TO VOLTAGE : V
Fig.1 Ground emitter propagation
characteristics
BE (V)
100
VCE=6V
80
60
40
20
COLLECTOR CURRENT : IC (mA)
0
102435
COLLECTOR TO EMITTER VOLTAGE : V
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
IB=0mA
CE (V)
Fig.2 Ground emitter output characteristics
Data Sheet
1000
500
200
100
DC CURRENT GAIN hFE
50
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500
COLLECTOR CURRENT I
Fig.3 DC current gain vs. Collector current ( )
Ta=25 C
VCE=3V
1V
C (mA)
1000
500
200
Ta=75 C
25 C
-
25 C
VCE=10V
100
50
DC CURRENT GAIN hFE
20
12 5
10 20 50 100
200 500 1000
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
Fig.4 DC current gain vs. Collector currnet ( )
Ta=25 C
50
Cib
20
10
Cob
5
f=1MHz
I
E=0A
0.5
0.2
=100/1
CE (sat) (V)
0.1
0.05
VOLTAGE : V
COLLECTOR SATURATION
0.02
B
/I
C
I
50/1
20/1
10/1
5 10 20 50 100 200 500
Fig.5 Collector-emitter saturation voltage
vs. Collector current
500
T (MHZ)
200
TRANSITION
FREQUENCY : f
Ta=25 C
Ta=25 C
VCE=6V
0.5
0.2
CE (sat) (V)
0.1
0.05
VOLTAGE : V
COLLECTOR SATURATION
0.02
Ta=75 C
10 20 50 100
5
-
25 C
25 C
200 500 1000
COLLECTOR CURRENT IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
IC/IB=10
0.1 0.2 0.5
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : V
12 510
EB (V)
20
Fig.7 Input-and-output capacity
vs.voltage characteristic
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
100
-
1
-2-5-10-20-
EMITTER CURRENT : IE (mA)
Fig.8 Transition frequency
vs.emitter current
2/2
50
2011.06 -
Rev. E
Loading...