ROHM 2SD2211, 2SD1918, 2SD1857A Datasheet

2SD2211 / 2SD1918 / 2SD1857A

Transistors

Power Transistor (160V , 1.5A)

2SD2211 / 2SD1918 / 2SD1857A

Features

!

1) High breakdown voltage.(BV

CEO

= 160V)

2) Low collector output capacitance.
(Typ. 20pF at V

3) High transition frequency.(f

CB

= 10V)

T

= 80MHZ)

4) Complements the 2SB1275 / 2SB1236A.

Absolute maximum ratings

!

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector
power
dissipation

Junction temperature

Storage temperature

1 Single pulse Pw=100ms

∗
∗

2
3

∗

!

Denotes h

*

2SD1857A
2SD2211

2SD1918

Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.

When mounted on a 40 x 40 x 0.7mm ceramic board.

Packaging specifications and h

Type 2SD2211

Package

FE

h

Marking

Code

Basic ordering unit (pieces)

FE

MPT3

QR

DQ*
T100
1000

(Ta = 25°C)

CBO

V
V

CEO

V

EBO

I

C

P

C

Tj

Tstg

2SD1918

CPT3

Q

−−

TL

2500

Limits

160
160

1.5

10

150

−55 ∼+150

FE

2SD1857A

5

3
1
2
1

ATV

PQ

TV2

2500

Unit

V
V
V

A(DC)

A(Pulse)

W
W

W(Tc=25°C)

°C
°C

External dimensions

!

2SD2211

ROHM : MPT3
EIAJ : SC-62

2SD1918

∗1
∗2

∗3

ROHM : CPT3
EIAJ : SC-63

2SD1857A

ROHM : ATV

0.65Max.

0.4

1.5

3.0

1.5

0.4

)
1

(
)

2.3

2

(
)

3

(

2.3

0.8Min.

1.0

0.5

6.8

(2)

(1)

2.54

(Units : mm)

4.0

1.0

2.5

(1)

(2)

0.5

(3)

0.4

5.5

0.75

0.9

0.9

0.65

1.5

2.5

9.5

0.9

1.0

0.5

(3)

2.54

Taping specifications

0.5

1.6

4.5

1.5

1.5

5.1

C0.5

0.5

2.5

4.4

14.5

1.05

6.5

2.3

0.45

(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)

(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)

(1) Emitter
(2) Collector
(3) Base

Electrical characteristics

!

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current

transfer ratio

Transition frequency

Output capacitance

∗

Measured using pulse current.

Parameter Symbol Min. Typ. Max. Unit Conditions

2SD2211,2SD1918
2SD1857A

(Ta = 25°C)

BV

CBO

I

CBO

I

EBO

CE(sat)

BE(sat)

h

Cob

160

CEO

160

EBO

120

FE

82

f

T

BV
BV

V
V

−

−

−

−

5

−

−

−

−

−

−

−

−

−

−

−

80

−

20

V

C

=

50µA

MHz

I

C

=

1mA

I

V
V

I

E

=

50µA

V

CB

=

µA
µA

pF

120V

EB

=

4V

V

C/IB

=

1A/0.1A

I

V

C/IB

=

1A/0.1A

I

V

−

V

CE/IC

=

−

5V/0.1A

V

CE

=

5V , I

E

= −

=

10V , I

0.1A , f = 30MHz

E

=

0A , f = 1MHz

V

CB

∗

∗

−

−

1
1
2

1.5
390
270

−

−