ROHM 2SD1898, 2SD1733 Technical data

Power Transistor (80V, 1A)
2SD1898 / 2SD1733
Features Dimensions (Unit : mm)
1) High V
2) High I
3) Good h
4) Low V
5) Complements the 2SB1260 / 2SB1181
Structure
Epitaxial planer type NPN silicon transistor
Absolute maximum ratings (Ta=25C)
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
Collector power dissipation
Junction temperature Tj 150 °C
Storage temperature Tstg 55 to +150 °C
1 Pw=20ms, duty=1 / 22 When mounted on a 40×40×0.7mm ceramic board.
CEO, VCEO=80V
C, IC=1A (DC)
FE linearity
CE (sat)
Parameter Symbol
CBO
CEO
EBO
C
I
2SD1898
P
2SD1733
+0.2
4.0±0.3
ROHM : MPT3 EIAJ : SC-62
0.3
±
1.5
0.1
0.3
+
5.5
0.75
Limits
Unit
120 V
80 V
5V
1 A (DC)
2 A (Pulse)
0.5
2
C
10
1
W (Tc=25°C)
1
W
W
2
W
+0.2
4.5
0.1
1.6±0.1
0.5±0.1
0.1
2.5
1.0±0.2
ROHM : CPT3 EIAJ : SC-63
(3)(2)(1)
0.5±0.1
0.4±0.1
1.5±0.1
6.5±0.2
5.1
0.9
(1)
+
(2)
0.4±0.1
1.5±0.1
3.0±0.2
Abbreviated symbol : DF
C0.5
0.2
0.1
0.9
0.65
±
0.1
2.3±0.22.3±0.2
(3)
±0.1
1.5
+0.1
0.4
0.05
(1) Base (2) Collector (3) Emitter
+
0.2
2.3
0.1
0.5
±
0.1
0.5
±
1.5
9.5
2.5
0.55
±
0.1
±
0.2
1.0
(1) Base (2) Collector (3) Emitter
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○c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.E
2SD1898 / 2SD1733
Absolute maximum ratings (Ta=25C)
Parameter Symbol
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
CBO 120 V
CEO 80 V
EBO 5V
C
I
2SD1898
Collector power dissipation
C
P
2SD1733
Junction temperature Tj 150 °C
Storage temperature Tstg 55 to +150 °C
1 Pw=20ms, duty=1 / 22 When mounted on a 40×40×0.7mm ceramic board.
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Measured using pulse current
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Packaging specifications and h
Package Taping
Code
Basic ordering unit (pieces)
Type
2SD1898
2SD1733
FE
QR
QR
FE
FE values are classified as follows :
h
Item
h
FE
Q
120 to 270
R
180 to 390
Limits
1 A (DC)
2 A (Pulse)
0.5
2
1
10
Min.
Typ. Max. Unit Conditions
120
80
5
120
0.15
100
T100
1000h
20
W (Tc=25°C)
1
0.5
390
0.4
TL
2500
Unit
W
W
W
MHz
1
2
C
VI
C
I
V
E
I
V
V
μA
V
μA
V
I
C/IB
V
V
V
pF
=50μA
=1mA
=50μA
CB
=100V
EB
=4V
CE
=3V, IC=0.5A
=500mA/50mA
CE
=10V, IE=50mA, f=100MHz
CB
=10V, IE=0A, f=1MHz
Data Sheet
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○c 2012 ROHM Co., Ltd. All rights reserved.
2012.01 - Rev.E
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