ROHM 2SD1866, 2SD2143, 2SD2212 Schematic [ru]
2SD2212 / 2SD2143 / 2SD1866
Transistors
Medium Power Transistor
(Motor, Relay drive) (60±10V, 2A)
2SD2212 / 2SD2143 / 2SD1866
zFeatures
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
1 Single pulse Pw=100ms
∗
2 When mounted on a 40×40×0.7mm ceramic board.
∗
3 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
2SD2212
2SD2143
2SD1866
Symbol
CBO
V
V
CEO
V
EBO
I
C
P
Tj
Tstg
C
Limits
60
±
10
60
±
10
6
2
∗1
3 A (Pulse)
0.5
∗2
2
1
10
∗3
1
150
−55 to +150
A (DC)
W (Tc=25
zPackaging specifications and h
Type
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
2SD2212
MPT3
1k to 10k
DR
T100
1000
FE
2SD2143
CPT3
1k to 10k
TL
2500
2SD1866
ATV
1k to 10k
−−
TV2
2500
zEquivalent circuit
C
B
R
2
R
E :
B :
C :
Emitter
Base
Collector
1
R
R
E
1
3.5kΩ
2
300Ω
Unit
V
V
V
W
W
°C)
W
°C
°C
zExternal dimensions (Unit : mm)
2SD2212
ROHM : MPT3
EIAJ : SC-62
2SD2143
ROHM : CPT3
EIAJ : SC-63
2SD1866
ROHM : ATV
)
1
(
)
2
(
)
3
(
1.0
0.65Max.
2.3
2.3
0.8Min.
0.5
(1)
4.0
1.0
2.5
(1)
0.4
1.5
(2)
3.0
0.5
(3)
1.5
0.4
0.4
5.5
0.75
0.9
0.9
0.65
1.5
2.5
9.5
6.8
0.5
(2)
(3)
2.54
2.54
0.5
1.6
4.5
1.5
1.5
5.1
C0.5
0.5
4.4
0.9
1.0
14.5
Taping specifications
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
6.5
2.3
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2.5
0.451.05
(1) Emitter
(2) Collector
(3) Base
Rev.A 1/3
2SD2212 / 2SD2143 / 2SD1866
Transistors
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
zElectrical characteristics curves
2.0
1.8
1.6
(A)
C
1.4
1.2
1.0
0.8
0.6
0.4
COLLECTOR CURRENT : I
0.2
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Groundede emitter output
characteristics ( Ι )
10000
5000
FE
2000
1000
500
200
100
DC CURRENT GAIN : h
50
20
10
0.001 0.01 0.1 0.2 0.5 1 2 5 10
Rev.A 2/3
Parameter
250µA
=200
B
I
Ta=25°C
A
µ
Ta=25°C
VCE=4V
VCE=2V
500µA
450µA
400µA
COLLECTOR CURRENT : IC (A)
300µA
Fig.4 DC current gain
vs. collector current ( Ι )
Symbol Min. Typ. Max. Unit Conditions
BV
BV
V
I
I
CE(sat)
h
Cob
52341
CBO
CEO
CBO
EBO
FE
f
T
50
−
70
50
−
−
−
−
−
−
1000
2.0
1.8
1.6
(A)
C
1.4
1.2
1.0
0.8
0.6
0.4
COLLECTOR CURRENT : I
0.2
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
−
−
10000
80
−−
−
25
500µA
450µA
400µA
350µA
A
µ
300
µA
250
I
24681
70
1.0
1.5
=200
B
V
V
µA
3
mA
V
−
MHz
−
pF
µA
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
C
=50µA
I
I
C
=5mA
CB
=40V
V
EB
=5V
V
I
C/IB
=1A/1mA
CE
=2V, IC=1A
V
CE
=5V, IE= −0.1A, f=30MHz
V
V
CB
=10V, IE=0A, f=1MHz
Ta=25°C
0
5
VCE=2V
2
1
0.5
0.2
0.1
0.05
0.01
COLLECTOR CURRENT : Ic (A)
0.001
0.5 1 1.5 2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
FE
2000
1000
500
200
100
DC CURRENT GAIN : h
50
20
10
0.001 10
Fig.5 DC current gain
vs. collector current ( ΙΙ )
C
25°C
°
=100
Ta
°C
25
−
0.01 0.1 0.2 0.5 1 2 5
COLLECTOR CURRENT : IC (A)
VCE=2V
100
(V)
50
CE(sat)
20
10
0.5
COLLECTOR SATURATION
VOLTAGE : V
0.2
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Ta=100˚C
IC/IB=1000
0.01 0.1 0.2
∗
25˚C
0.5
25˚C
−
Ta=25°C
500
11225510
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