ROHM 2SD1818, 2SD1857A Technical data
*
Power Transistor (160V , 1.5A)
2SD1918 / 2SD1857A
Features Dimensions (Unit : mm)
1) High breakdown voltage.(BV
2) Low collector output capacitance.
(Typ. 20pF at VCB=10V)
3) High transition frequency.(f
4) Complements the 2SB1275.
Absolute maximum ratings (Ta = 25C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 Pw=200msec duty=1/2
∗
∗
2
2SD1857A
2SD1918
Printed circuit board 1.7mm thick, collector plating 1cm2 or larger
V
V
V
Tstg
CBO
CEO
EBO
I
C
P
C
Tj
Packaging specifications and h
Type 2SD1918
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
CPT3
QR
−−
TL
2500
Electrical characteristics (Ta = 25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
2SD1918
2SD1857A
T=80MHZ)
Limits
160
160
5
1.5
3
1
10
150
−55 ∼+150
2SD1857A
ATV
PQ
TV2
2500
BV
BV
BV
V
V
CEO=160V)
Unit
A(DC)
A(Pulse)
W(Tc=25°C)
°C
°C
.
FE
CBO
160
CEO
160
EBO
I
CBO
I
EBO
CE(sat)
BE(sat)
h
Cob
120
FE
f
T
2SD1918
0.75
0.9
)
1
(
)
2.3
2
(
)
3
(
2.3
0.65
0.8Min.
1.5
1.0
0.5
2.5
V
V
V
∗1
W
∗2
W1
−
−
V
−
−
V
−
−
1.5
390
270
V
1
μA
1
μA
V
2
V
−
−
−
MHz
−
pF
5
−
−
−
−
−
−
−
−
−
−
82
−
80
−
20
2SD1857A
C
=
50μA
I
I
C
=
1mA
I
E
=
50μA
V
CB
=
120V
EB
=
4V
V
I
C/IB
=
1A/0.1A
C/IB
=
1A/0.1A
I
V
CE/IC
=
V
CE
=
5V , I
CB
=
10V , I
V
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
5V/0.1A
E
= −
0.1A , f = 30MHz
E
=
0A , f = 1MHz
0.65Max.
6.8
0.5
(2)
(3)
(1)
2.54
2.54
1.5
5.5
5.1
0.9
C0.5
0.5
9.5
2.5
4.4
0.9
1.0
14.5
1.05
Taping specifications
∗
∗
6.5
2.3
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
0.45
(1) Emitter
(2) Collector
(3) Base
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2010 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.C
1.0
F
cs
F
cs
10
1000
DC CURRENT GAIN : h
)
1000
)
)
F
e
vs. collector current
V)
F
nt
1000
F
nt
0
)
F)
)
1)
10
Electrical characteristic curves
Ta=25°C
(A)
0.8
C
0.6
0.4
0.2
COLLECTOR CURRENT : I
0
012345
COLLECTOR TO EMITTER VOLTAGE : V
ig.1 Ground emitter output characteristi
500
Ta=
100
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
°C
25°C
−25°C
COLLECTOR CURRENT : I
Fig.4 DC current gain vs. collector current ( ΙΙ
500
(MHz)
T
200
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1
−1 −2 −5 −10 −20 −50 −100 −200 −500 −1000
EMITTER CURRENT : I
ig.7 Gain bandwidth products vs. emitter curre
C
(A)
E
(mA)
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
=1mA
B
I
CE
V
CE
=
5V
Ta=25°C
V
CE
=
5V
(V)
5
(A)
C
2
1
Ta=
100
0.5
0.2
0.1
0.05
COLLECTOR CURRENT : I
0.02
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
ig.2 Ground emitter propagation characteristi
10
(V
5
CE(sat)
2
1
0.5
0.2
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
ig.5 Collector-emitter saturation voltag
1000
(p
ob
500
200
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 10
COLLECTOR OUTPUT CAPACITANCE : C
COLLECTOR TO BASE VOLTAGE : V
Fig.8 Collector output capacitance
vs. collector-base voltage
°C
BASE TO EMITTER VOLTAGE : V
IC/IB=20
COLLECTOR CURRENT : I
Ta=25°C
Ta= −25°C
10
VCE=5V
BE
Ta=25°C
C
(A)
Ta=25°C
f=1MHz
E
=
0A
I
CB
(V)
(V
Data Sheet 2SD1918 / 2SD1857A
500
FE
200
100
50
20
10
5
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : I
Ta=25°C
V
CE
C
(A)
=
10V
5V
Fig.3 DC current gain vs. collector current ( Ι
(
10
5
CE(sat)
(V)
2
BE(sat)
Ta= −25°C
1
0.5
V
BE(sat)
0.2
0.1
0.05
0.02
V
CE(sat)
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
ig.6 Collector-emitter saturation voltage
Base-emitter saturation voltage
5
Ic
Max
(Pulse∗)
2
(A)
C
1
500m
200m
100m
50m
20m
10m
5m
COLLECTOR CURRENT : I
2m
Recommended land
1m
0.1 0.2 0.5 2 5 10 20 50 100 200 500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V
25°C
DC
100°C
Pw=100ms∗
−25°C
vs. collector curre
Ta=25°C
∗Single
Pw=10ms∗
nonrepetitive
pulse
C
(A)
Fig.9 Safe operating area (2SD221
IC/IB=10
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2010 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.C
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