ROHM 2SD1781K Technical data
2SD1781K
z
z
z
z
Transistors
Medium Power Transistor (32V, 0.8A)
2SD1781K
Features
1) Very Low V
V
CE(sat) = 0.1V(T yp.)
CE(sat).
IC / IB= 500УA / 50mA
2) High current capacity in compactpackage.
3) Complements the 2SB1 197K.
Structure
Epitaxial planar type
NPN silicon transistor
External dimensions (Unit : mm)
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(1)
0.2
+
1.6
(3)
+
0.1
0.4
−0.05
All terminals have
ROHM : SMT3
EIAJ : SC-59
Denotes h
∗
FE
same dimensions
Abbreviated symbol : AF
+
0.2
1.1
−0.1
0.8±0.1
−0.1
2.8±0.2
+
0.1
0.15
−0.06
∗
0~0.1
0.3~0.6
(1) Emitter
(2) Base
(3) Collector
z
Absolute maximum ratings (Ta=25qC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Single pulse Pw=100ms
∗
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
40 V
32
5
0.8
200
150
+
150
−55 to
A (DC)
A (Pulse)1.5
mW
V
V
∗
°C
°C
Rev.A 1/3
Transistors
z
z
z
Electrical characteristics (T a=25qC)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
z
Packaging specifications and h
Package
Code T146
Type
2SD1781K
h
QR
FE
Basic ordering
unit (pieces)
2SD1781K
Typ. Max. Unit Conditions
Min.
CBO
CEO
EBO
CBO
EBO
CE(sat)
h
FE
f
T
40
32
120
−
−
5
−
−
−
−
−
0.1
−
−
150
−
15
BV
BV
BV
I
I
V
Cob
FE
−
Taping
3000
VI
−
−
−
0.5
0.5
0.4
390
−
−
V
V
μ
μ
V
−
MHz
pF
C
=50μA
C
=1mA
I
I
E
=50μA
CB
=20V
A
V
EB
=4V
A
V
C/IB
=500mA/50mA
I
V
CE
=3V, IC=100mA
V
CE
=5V, IE= −50mA, f=100MHz
CB
=10V, IE=0A, f=1MHz
V
hFE values are classified as follows :
Item Q
FE 120 to 270
h
180 to 390
R
z
Electrical characteristic curves
1000
500
200
C (mA)
100
50
20
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0.20 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
Ta=25°C
V
CE
Fig.1 Grounded emitter propagation
characteristics
=
6V
BE (V)
400
(mA)
C
300
200
100
COLLECTOR CURRENT : I
0
0246810
COLLECTOR TO EMITTER VOLTAGE : V
Tc=25°C
1mA
1mA
900μA
800μA
800μA
700μA
600μA
500μA
400μA
300μA
200μA
100μA
IB=0μA
Fig.2 Grounded emitter output
characteristics
CE
(V)
1000
500
FE
200
100
50
DC CURRENT GAIN : h
20
10
1
Ta=100°C
2 5 10 20 50
COLLECTOR CURRENT : I
25°C
−55°C
V
CE
=
5V
100 200 5001000
C
(mA)
Fig.3 DC current gain vs. collector
current
Rev.A 2/3
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