ROHM 2SD1898, 2SD1768S, 2SD1863, 2SD1733, 2SD1381F Datasheet
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /
2SD1381F
Features
!
CEO
1) High V
2) High I
3) Good h
4) Low V
CEO
, V
C
, IC=1A (DC)
FE
linearity
CE
(sat)
=80V
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
Structure
!
Epitaxial planer type
NPN silicon transistor
External dimensions
!
2SD1898
ROHM : MPT3
EIAJ : SC-62
2SD1733
6.5±0.2
0.3
±
1.5
0.1
0.3
−
+
5.5
0.75
ROHM : CPT3
EIAJ : SC-63
C0.5
+
0.2
5.1
−
0.1
0.9
0.65
±
0.9
(1)
0.1
2.3±0.22.3±0.2
(2)
(3)
(Units : mm)
+0.2
4.5
−0.1
1.6±0.1
0.5±0.1
−0.1
+0.2
2.5
4.0±0.3
0.5±0.1
0.4±0.1
1.5±0.1
1.0±0.2
3.0±0.2
Abbreviated symbol : DF
+
0.2
2.3
−
0.1
±
0.1
0.5
0.5
±
1.5
9.5
2.5
0.55
±
0.1
±
0.2
1.0
(1) Base
(2) Collector
(3) Emitter
(3)(2)(1)
0.4±0.1
1.5±0.1
+0.2
1.5
−0.1
0.4
2SD1768S
4±0.2
3±0.2(15Min.)
5
(1)
(2) (3)
ROHM : SPT
EIAJ : SC-72
+0.1
−0.05
(1) Base
(2) Collector
(3) Emitter
2±0.2
3Min.
+0.15
0.45
−0.05
+0.4
2.5
−0.1
+0.15
0.45
0.5
−0.05
(1) Emitter
(2) Collector
(3) Base
2SD1863
0.65Max.
(1)
6.8±0.2
(2)
2.54
2SD1381F
2.5±0.2
0.9
4.4±0.2
1.0
0.5±0.1
(3)
2.54
14.5±0.5
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) BaseROHM : ATV
7.8±0.2
10.8±0.216.0±0.5
1.21.1
1.75
2.3±0.5 2.3±0.5
(2)
(1)
(3)
0.8
1.6
0.95
Back
Front
6.9
φ
φ
3.19
9.2
0.7±0.1
3.2±0.2
3.3
C0.7
(1) Emitter
(2) Collector
(3) BaseROHM : TO-126FP
1.76±0.5
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
Absolute maximum ratings
!
Parameter Symbol
Collector-base voltage V
Collector-emitter voltage VCEO 80 V
Emitter-base voltage V
Collector current
2SD1898
Collector power
dissipation
Junction temperature Tj 150 ˚C
Storage temperature Tstg −55∼+150 ˚C
1 Pw=20ms, duty=1 / 2
∗
2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.
∗
3 When mounted on a 40×40×0.7mm ceramic board.
∗
2SD1733
2SD1768S
2SD1863
2SD1381F
(Ta=25°C)
Limits
CBO 100 V
EBO 5V
C
I
C
P
1 A (DC)
2 A (Pulse)
0.5
2
1
10
W (Tc=25˚C)
0.3
1
1.2
5
W (Tc=25˚C)
Unit
W
W
1
∗
3
∗
2
∗
Electrical characteristics
!
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
2SD1733, 2SD1898
2SD1768S
2SD1381F
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Measured using pulse current
*
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
Typ. Max. Unit Conditions
C
=
100
1802SD1863
80
−
−
−
−
5
−
−
−
−
1
−
1
−
390
−
82 − 390 −
120 − 390 −
µA
µA
VI
C
=
I
V
I
V
E
=
V
CB
EB
V
−
V
CE
50µA
1mA
50µA
=
=
=
82 − 270 −
−
−
−
0.15
100
20
0.4
−
−
V
MHz
pF
I
C/IB
=
CE
=
V
V
CB
=
80V
4V
3V, I
C
=
0.5A
500mA/20mA
10V, I
E
=−
50mA, f=100MHz
10V, I
E
=
0A, f=1MHz
∗
Loading...