ROHM 2SD1767, 2SD1859 Datasheet
2SD1767 / 2SD1859
Transistors
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859
!!!!Features
1) High breakdown voltage, BV
high current, I
=0.7A.
C
=80V, and
CEO
2) Complements the 2SB1189 / 2SB1238.
!!!!Absolute maximum ratings (Ta=25°C)
2
or larger.
FE
2SD1859
−55~+150
ATV
QR
−
TV2
2500
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 Pw=10ms, duty=1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board 1.7 mm thick, collector plating 1cm
Parameter
2SD1767
2SD1859
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
!!!!Packaging specifications and h
Type
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
Denot
es hFE
∗
2SD1767
MPT3
PQR
DC
∗
T100
1000
150
!!!!External dimensions (Units : mm)
2SD1767
1.5
3.0
80
80
5
0.7
1
0.5
2
1
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
∗1
∗2
∗3
ROHM : MPT3
EIAJ : SC-62
2SD1859
ROHM : ATV
0.65Max.
1.5
(2)
(1)
2.54
4.0
1.0
2.5
0.5
(1)
0.4
(2)
0.5
(3)
0.4
0.4
6.8
0.5
(3)
2.54
(1) Base
(2) Collector
(3) Emitter
2.5
4.4
0.9
1.0
14.5
1.6
4.5
1.5
0.451.05
Taping specifications
(1) Emitter
(2) Collector
(3) Base
!!!!Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Parameter
2SD1767
2SD1859
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min. Typ. Max. Unit
120
80
80
5
−
−
−
82
−
−
120
−
−
−
−
−
−
0.5
−
0.5
−
0.4
0.2
390
−
390
−
10
MHz
−
−
I
C
=50µA
V
I
C
=2mA
V
I
E
=50µA
V
VCB=50V
µA
EB
=4V
V
µA
C/IB
=500mA/50mA
I
V
−
V
CE/IC
−
V
CE
=10V, IE=−50mA, f=100MHz
pF
V
CB
=10V, IE=0A, f=1MHz
Conditions
=3V/0.1A
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