ROHM 2SD1767, 2SD1859 Schematic [ru]
2SD1767 / 2SD1859
Transistors
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859
zFeatures
1) High breakdown voltage, BV
high current, I
C=0.7A.
CEO=80V , and
2) Complements the 2SB1189 / 2SB1238.
zAbsolute maximum ratings (Ta=25°C)
2
or larger.
Limits
80
80
5
0.7
1
0.5
2
1
150
−55 to +150
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 Pw=10ms, duty=1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board 1.7 mm thick, collector plating 1cm
2SD1767
2SD1859
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
Tj
Tstg
C
zPackaging specifications and h
Type
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
Denot
es h
FE
∗
2SD1767
MPT3
PQR
DC
T100
1000
FE
2SD1859
ATV
QR
∗
TV2
2500
−
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Parameter
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Unit
V
V
V
A(DC)
∗1
A(Pulse)
∗2
∗3
W
°C
°C
Min. Typ. Max. Unit
80
−
80
−
5
−
0.5
−
−
−
−
120
−
−
0.2
120
10
0.5
−
0.4
390
−
zExternal dimensions (Unit : mm)
2SD1767
1.0
0.4
1.5
3.0
0.5
1.5
0.4
0.4
ROHM : MPT3
EIAJ : SC-62
2SD1859
6.8
0.65Max.
(2)
(3)
(1)
2.54
2.54
ROHM : ATV
I
C
=50µA
V
−
−
−
−
−
V
V
µA
µA
V
− V
MHz
pF
I
C
=2mA
I
E
=50µA
V
CB
=50V
EB
=4V
V
I
C/IB
=500mA/50mA
CE/IC
=3V/0.1A
CE
=10V, IE=−50mA, f=100MHz
V
V
CB
=10V, IE=0A, f=1MHz
4.0
2.5
(1)
(2)
(3)
(1) Base
(2) Collector
(3) Emitter
4.4
0.9
1.0
14.5
0.5
Taping specifications
(1) Emitter
(2) Collector
(3) Base
Conditions
0.5
1.6
4.5
1.5
2.5
0.451.05
Rev.A 1/2
Transistors
zElectrical characteristics curves
Ta=25
°C
1.0
(A)
C
0.8
0.6
0.4
0.2
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Ground emitter output characteristics
(V)
CE(sat)
0.2
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
2 5 10 20 50 100 200 500 1000
Fig.4 Collector-emitter saturation voltage
vs. collector current
(pF)
ib
100
: C
50
20
10
5
EMITTER INPUT CAPACITANCE
10mA
9mA
8mA
2 4 6 8 100
IC/IB=20
10
COLLECTOR CURRENT : I
0.5 1 2 5 10 20
EMITTER TO BASE VOLTAGE : V
Ta=25
C
(mA)
Ta=25
I
7mA
6mA
4mA
3mA
2mA
1mA
IB=0A
f=1MHz
C
=
0A
EB
Fig.7 Emitter input capacitance
vs. emitter-base voltage
5mA
CE
°C
(V)
(V)
°C
50
20
(mA)
C
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0
0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
Fig.2
Ground emitter propagetion characteristics
1000
500
(MHz)
T
: f
200
100
50
20
TRANSITION FREQUENCY
10
−1 −2 −5 −10 −20 −50 −100
EMITTER CURRENT : I
E
Ta=25
V
Ta=25
V
(mA)
Fig.5 Resistance raito vs. emitter current
10
5
2
(A)
IC Max (Pulse)
C
1
500m
200m
100m
50m
20m
10m
Tc=25°C
∗ Single
5m
COLLECTOR CURRENT : I
nonrepetitive
2m
pulse
1m
COLLECTOR TO EMITTER VOLTAGE : V
Fig.8 Safe operating area
DC
P
W
=
100
ms
P
W
=
10
ms
∗
∗
(2SD1859)
2SD1767 / 2SD1859
°C
CE
=
6V
BE
(V)
°C
CE
=
5V
CE
1000
500
FE
200
100
DC CURRENT GAIN : h
50
12 5102050
COLLECTOR CURRENT : I
Fig.3 DC current gain vs. collector current
(pF)
ob
: C
100
50
20
10
5
0.5 1 2 5 10 20
COLLECTOR OUTPUT CAPACITANCE
COLLECTOR TO BASE VOLTAGE : V
Fig.6 Collector output capacitance
vs. collector-base voltage
2
(A)
IC Max Pulse
1
C
IC Max
0.5
0.2
0.1
Tc=25°C
∗ Single
0.05
COLLECTOR CURRENT : I
nonrepetitive
pulse
0.02
1000 100 10 1 0.1 0.2 0.5 2 5 20 50 200 500
(V)
2 1 5 10 20 50 100
COLLECTOR TO EMITTER VOLTAGE : V
Fig.9 Safe operating area
Ta=25
V
CE
=
5V
3
V
1
V
100 200 500 5000
C
(mA)
Ta=25
P
W
P
=
W
=
100
ms
DC
(2SD1767)
f=1MHz
C
=
0A
I
CB
10
ms
∗
°C
°C
(V)
∗
CE
(V)
Rev.A 2/2
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