ROHM 2SD1758, 2SD1766, 2SD1862 Schematic [ru]
2SD1766 / 2SD1758 / 2SD1862
z
z
z
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Transistors
Medium Power Transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Features
1) Low V
CE(sat).
V
CE(sat) =0.5V(T yp.)
IC / IB= 2A / 0.2A
2) Complements the 2SB1 188 / 2SB1182 /
2SB1240.
Structure
Epitaxial planar type
NPN silicon transistor
External dimensions (Unit : mm)
2SD1766 2SD1758
0.3
±
4.0
ROHM : MPT3
EIAJ : SC-62
2SD1862
0.65Max.
Denotes hFE
∗
+0.2
4.5
−0.1
0.1
±
1.6±0.1
0.5
−0.1
+0.2
2.5
0.2
±
1.0
(1)
ROHM : ATV
(3)(2)(1)
0.5±0.1
0.4±0.1
1.5±0.1
Abbreviated symbol : DB
6.8±0.2
(2)
2.54
0.4±0.1
1.5±0.1
3.0±0.2
0.9
1.0
0.5
±
0.1
(3)
2.54
+0.2
1.5
−0.1
∗
(1) Base
(2) Collector
(3) Emitter
±
0.2
2.5
0.2
±
4.4
0.5
±
14.5
1.05
0.45
(1) Emitter
(2) Collector
(3) Base
+0.1
0.4
−0.05
±
0.1
±
0.2
6.5
0.3
+
0.2
±
5.1
−
0.1
1.5
0.1
0.3
−
+
0.9
5.5
0.65
0.75
0.9
2.3±0.22.3±0.2
(2)
(3)
(1)
ROHM : CPT3
EIAJ : SC-63
C0.5
±
0.1
+
0.2
2.3
−
0.1
±
0.1
0.5
1.5
2.5
0.1
±
0.55
±
0.2
1.0
(1) Base
(2) Collector
(3) Emitter
0.5
±
9.5
z
Absolute maximum ratings (Ta=25qC)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
2SD1766
power
dissipation
2SD1758
V
CBO
V
CEO
EBO
V
I
C
I
CP
P
C
Limits
2SD1862
Junction temperature
Storage temperature
1 Single pulse, Pw=20ms
∗
2 When mounted on a 40×40×0.7 mm ceramic board.
∗
3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2or lager.
∗
Tj 150
Tstg −55 to +150
Unit
40 V
32 V
5V
2 A (DC)
2.5 A (Pulse)
0.5
2
2
∗
1
10
1
W (Tc=25
∗
3W
1
∗
W
W
°C
)
°C
°C
Rev.A 1/3
Transistors
z
z
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Electrical characteristics (T a=25qC)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Measured using pulse current.
∗
z
Packaging specifications and hFE
Type
2SD1766
2SD1758
2SD1862
2SD1766,2SD1758,
Package Taping
Code
Basic ordering
FE
unit (pieces)
PQR
PQR
QR
T100
1000h
−
−
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
h
FE
CE(sat)
f
T
Cob
TL
2500
−
−
2SD1766 / 2SD1758 / 2SD1862
Min.
Typ. Max. Unit Conditions
−
40
32
5
−
−
82
1202SD1862
−
−
100
−
TV2
2500
−
−
0.5
30
−
−
−
−
−
−
1
−
1
−
390
390
−
0.8
−
−
C
=50μA
VI
V
C
=1mA
I
V
I
E
=50μA
V
CB
μ
μ
−
V
MHz
pF
=20V
A
EB
=4V
A
V
VCE=3V, IC=0.5A
C/IB
=2A/0.2A
I
VCE=5V, IE= −500mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
∗
∗
∗
h
FE values are classified as follows :
Item
h
FE
z
Electrical characteristic curves
2000
1000
(mA)
500
C
200
100
50
20
10
5
COLLECTOR CURRENT : I
2
1
0.2 0.60.4 0.8 1.0 1.2 1.4 1.6 1.8
02.0
BASE TO EMITTER VOLTAGE : V
P
82 to 180
Q
120 to 270
Ta=25°C
V
CE
=
3V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
R
180 to 390
0.5
Ta=25°C
3.0mA
(A)
C
0.4
0.3
0.2
0.1
COLLECTOR CURRENT : I
0
0.4 0.8 1.2 1.6 2.00
COLLECTOR TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter output
characteristics
2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
1.2mA
0.9mA
0.6mA
0.3mA
IB=0A
500
FE
200
100
50
DC CURRENT GAIN : h
20
5
10 20 50 100 200 500 1A 2A
CE
(V)
COLLECTOR CURRENT : I
Fig.3 DC current gain vs. collector
current
VCE=3V
1V
C
Ta
(mA)
=25°C
Rev.A 2/3
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