ROHM 2SD1757K Technical data
Transistors
Power Transistor (15V, 0.5A)
2SD1757K
zFeatures
1) Low V
CE(sat). (Typ.8mV at IC/IB = 10/1mA)
2) Optimal for muting.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
15
6.5
0.5
0.2
150
−55 to +150
zPackaging specifications and hFE
Type
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
∗ Denotes h
FE
2SD1757K
SMT3
QRS
∗
AA
T146
3000
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
f
Cob
CBO
CEO
EBO
FE
T
6.5
120
Unit
V
V
V
A
W
°C
°C
−
−
30
15
−
−
−
−
−
0.1
150
−
−
−
−
0.5
−
0.5
−
0.4
560
−
−
−
15
zExternal dimensions (Unit : mm)
0.4
0.3to0.6
ROHM : SMT3
EIAJ : SC-59
I
V
C
=50µA
V
C
=1mA
I
V
E
=50µA
I
µA
CB
=20V
V
µA
V
EB
=4V
V
I
C/IB
=500mA/50mA
−
V
CE/IC
MHz
pF
=3V/100mA
V
CE
=5V , IE=−50mA , f=100MHz
CB
=10V , IE=0A , f=1MHz
V
)
3
(
1.6
2.8
0.15
0to0.1
Each lead has same dimensions
2SD1757K
)
1
(
1.9
2.9
)
2
(
0.95 0.95
1.1
0.8
(1) Emitter
(2) Base
(3) Collector
Rev.A 1/3
Transistors
zElectrical characteristics curves
1000
500
200
(mA)
C
100
50
20
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : V
Fig.1 Ground emitter propagation characteristics
Ta=25
V
CE
°C
=
6V
(V)
BE
1000
500
FE
200
100
50
DC CURRENT GAIN : h
20
10
1
2 5 10 20 50
COLLECTOR CURRENT : I
Ta=100
25
−55
Fig.4 DC current gain vs. collector current( )
VCE=
°C
°C
°C
100 200 500 1000
(mA)
C
5V
500
(mA)
400
C
300
200
100
COLLECTOR CURRENT : I
0
024681
COLLECTOR TO EMITTER VOLTAGE : V
Tc=25
=1mA
B
I
900
800µ
700
600µ
500µA
400µA
300µ
200µA
100µA
IB=0µA
Fig.2 Ground emitter output characteristics
1000
(mV)
500
CE(sat)
200
100
50
IC/IB=50
20
10
COLLECTOR SATURATION VOLTAGE : V
20
10
5
12 5102050
COLLECTOR CURRENT : I
Ta=25
°C
100 200 500 1000
(mA)
C
Fig.5 Collector-emitter saturation voltage
vs. collector current ( )
°C
µA
µ
CE
2SD1757K
1000
500
FE
A
A
A
A
(V)
200
100
50
DC CURRENT GAIN : h
20
10
0
1
2 5 10 20 50
COLLECTOR CURRENT : I
Fig.3 DC current gain vs. collector current ( )
1000
(mV)
500
CE(sat)
200
100
50
20
10
5
12 5102050
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Ta=100°C
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
Ta=25°C
VCE=5V
VCE=1V
3V
100 200 500 1000
(mA)
C
lC/lB=10
25°C
−55°C
100 200 500 1000
(mA)
C
1000
(mV)
500
CE(sat)
200
100
50
20
10
5
12 5102050
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Ta=100°C
lC/lB=20
25°C
−55°C
100 200 500 1000
(mA)
C
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )
1000
(mV)
CE(sat)
500
200
100
50
20
10
12 5102050
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Ta=100°C
lC/lB=50
25°C
−55°C
100 200 500 1000
(mA)
C
Fig.8 Collector-emitter saturation voltage
vs. collector current ( )
500
(MHz)
T
200
100
50
20
10
TRANSITION FREQUENCY : f
−1
−2 −5
−10 −20
EMITTER CURRENT : I
Ta=25
V
−50 −100
(mA)
E
°C
=
5V
CE
−200 −500
Fig.9 Gain bandwidth product vs. emitter current
Rev.A 2/3
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