ROHM 2SD1383K, 2SC1645S Technical data

2SD1383K / 2SC1645S

Transistors

High-gain Amplifier Transistor (32V , 0.3A)

2SD1383K / 2SC1645S

zFeatures

1) Darlington connection for high DC current gain.

2) Built-in 4kΩ resistor between base and emitter.

3) Complements the 2SD852K / 2SA830S.

zCircuit diagram

C

B

R

BE

4kΩ

E : Emitter
B : Base
C : Collector

E

zPackaging specifications

Type

Package

h

FE

Marking

Denotes h

Code

FE

Basic ordering unit (pieces)

∗

2SD1383K

SMT3

B

W

∗

T146
3000

2SC1645S

SPT

B

−

TP

5000

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Collector power dissipation

Junction temperature
Storage temperature

∗1 RBE=0Ω
∗2 Single pulse Pw=10ms

CBO

V
V

CEO

V

EBO

I

P

Tj

Tstg

C

C

Limits

40
32

6

0.3

1.5 A (Pulse)

0.2

150

−55 to +150

zExternal dimensions (Unit : mm)

2SD1383K

2.9

0.4

(3)

(2)

(1)

0.95 0.95

(1)Emitter
(2)Base
(3)Collector

1.9

2SC1645S

4.0 2.0

3.0

(15Min.)

5.0

(1) (2) (3)

(1)Emitter
(2)Collector
(3)Base

Unit

V

∗1

V
V

A (DC)

∗2

W

°C
°C

1.1

0.8

1.6

2.8

0.15

0.3Min.

Each lead has same dimensions

3Min.

0.45

0.45

2.5

0.5

Taping specifications

Rev.A 1/3

2SD1383K / 2SC1645S

Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance

∗1 Measured using pulse current.
∗2 Transition frequency of the device.

zElectrical characteristic curves

125

(%)

100

CMax

/P

C

75

50

25

POWER DISSIPATION : P

0

0 25 50 75 100 125 150

AMBIENT TEMPERATURE : Ta (°C)

Fig.1 Power dissipation curves

Ta=25°C

50000

FE

20000
10000

5000

2000

DC CURRENT GAIN : h

1000

500

5 10 20 50 100 200 500

COLLECTOR CURRENT : I

Fig.4 DC current gain vs. collector current ( Ι )

VCE=3V

C

(mA)

1000 2000

CBO

BV
BV

CEO
EBO

BV

I

CBO
EBO

I

FE

h

CE(sat)

V

T

f

Cob − 5 −

500

(mA)

200

C

100

50

20
10

5

COLLECTOR CURRENT : I

2
0

Fig.2 Ground emitter propagation characteristisc

FE

5V

100000

50000

20000
10000

DC CURRENT GAIN : h

5000

Fig.5 DC current gain vs. collector current ( ΙΙ )

40
32

6

−−

−−

−−

−−

−−

5000 −

−−1.5

250

−

C

C

°

100°

25°C

=

Ta

Ta=

Ta= −55

0.40 0.8 1.2 1.6 2.0 2.4 2.8 3.2

BASE TO EMITTER VOLTAGE : V

VCE=5V

°C

Ta=100

°C

25

−55°C

5 10 20 50 100 200 500

COLLECTOR CURRENT : I

C

(mA)

V

I

V

I

V

I

1

µAVCB=24V

1

µAVEB=4.5V

−−

−

VCE=6V

BE

(V)

1000 2000

V
I

V

MHz

VCE=5V, IE= −10mA, f=100MHz
V

pF

100

(mA)

C

50

COLLECTOR CURRENT : I

(V)

CE(sat)

COLLECTOR SATURATION VOLTAGE : V

Fig.6 Collector-emitter saturation voltage
vs. collector current

C

=100µA

C

= −1mA , RBE=0Ω

E

=100µA

CE

=5V, IC=0.1A

C

=200mA, IB=0.4mA

∗1
∗2

CB

=10V, IE=0A, f=1MHz

µA

=10

B

I

A

9µ

A

8µ

A

7µ

A

µ

6

µA

5

4µA

0

01

COLLECTOR TO EMITTER VOLTAGE : V

3µA

234

Fig.3 Ground emitter output characteristics

IC/IB=500

2

1

0.5

0.2

0.1

0.5 1 2 5 100 200 500

Ta= −55°C

100°C

COLLECTOR CURRENT : I

25°C

Ta=25°C

C

(mA)

5

CE

(V)

1000 2000

Rev.A 2/3