2SD1383K / 2SC1645S
Transistors
High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K / 2SC1645S
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD852K / 2SA830S.
zCircuit diagram
C
B
R
BE
4kΩ
E : Emitter
B : Base
C : Collector
E
zPackaging specifications
Type
Package
h
FE
Marking
Denotes h
Code
FE
Basic ordering unit (pieces)
∗
2SD1383K
SMT3
B
W
∗
T146
3000
2SC1645S
SPT
B
−
TP
5000
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 RBE=0Ω
∗2 Single pulse Pw=10ms
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
Limits
40
32
6
0.3
1.5 A (Pulse)
0.2
150
−55 to +150
zExternal dimensions (Unit : mm)
2SD1383K
2.9
0.4
(3)
(2)
(1)
0.95 0.95
(1)Emitter
(2)Base
(3)Collector
1.9
2SC1645S
4.0 2.0
3.0
(15Min.)
5.0
(1) (2) (3)
(1)Emitter
(2)Collector
(3)Base
Unit
V
∗1
V
V
A (DC)
∗2
W
°C
°C
1.1
0.8
1.6
2.8
0.15
0.3Min.
Each lead has same dimensions
3Min.
0.45
0.45
2.5
0.5
Taping specifications
Rev.A 1/3
2SD1383K / 2SC1645S
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗1 Measured using pulse current.
∗2 Transition frequency of the device.
zElectrical characteristic curves
125
(%)
100
CMax
/P
C
75
50
25
POWER DISSIPATION : P
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Power dissipation curves
Ta=25°C
50000
FE
20000
10000
5000
2000
DC CURRENT GAIN : h
1000
500
5 10 20 50 100 200 500
COLLECTOR CURRENT : I
Fig.4 DC current gain vs. collector current ( Ι )
VCE=3V
C
(mA)
1000 2000
CBO
BV
BV
CEO
EBO
BV
I
CBO
EBO
I
FE
h
CE(sat)
V
T
f
Cob − 5 −
500
(mA)
200
C
100
50
20
10
5
COLLECTOR CURRENT : I
2
0
Fig.2 Ground emitter propagation characteristisc
FE
5V
100000
50000
20000
10000
DC CURRENT GAIN : h
5000
Fig.5 DC current gain vs. collector current ( ΙΙ )
40
32
6
−−
−−
−−
−−
−−
5000 −
−−1.5
250
−
C
C
°
100°
25°C
=
Ta
Ta=
Ta= −55
0.40 0.8 1.2 1.6 2.0 2.4 2.8 3.2
BASE TO EMITTER VOLTAGE : V
VCE=5V
°C
Ta=100
°C
25
−55°C
5 10 20 50 100 200 500
COLLECTOR CURRENT : I
C
(mA)
V
I
V
I
V
I
1
µAVCB=24V
1
µAVEB=4.5V
−−
−
VCE=6V
BE
(V)
1000 2000
V
I
V
MHz
VCE=5V, IE= −10mA, f=100MHz
V
pF
100
(mA)
C
50
COLLECTOR CURRENT : I
(V)
CE(sat)
COLLECTOR SATURATION VOLTAGE : V
Fig.6 Collector-emitter saturation voltage
vs. collector current
C
=100µA
C
= −1mA , RBE=0Ω
E
=100µA
CE
=5V, IC=0.1A
C
=200mA, IB=0.4mA
∗1
∗2
CB
=10V, IE=0A, f=1MHz
µA
=10
B
I
A
9µ
A
8µ
A
7µ
A
µ
6
µA
5
4µA
0
01
COLLECTOR TO EMITTER VOLTAGE : V
3µA
234
Fig.3 Ground emitter output characteristics
IC/IB=500
2
1
0.5
0.2
0.1
0.5 1 2 5 100 200 500
Ta= −55°C
100°C
COLLECTOR CURRENT : I
25°C
Ta=25°C
C
(mA)
5
CE
(V)
1000 2000
Rev.A 2/3
2SD1383K / 2SC1645S
Transistors
(MHz)
500
T
200
100
Ta=25°C
VCE=6V
Ta=25°C
f=1MHz
I
E
=0A
20
10
5
20
10
5
Ta=25°C
f=1MHz
I
E
=0A
50
TRANSISION FREQUWNCY : f
−1 −2 −5 −10 −20 −50 −100
EMITTER CURRENT : I
E
(mA)
Fig.7 Gain bandwidth product vs. emitter current
2
OUTPUT CAPACITANCE : Cob (pF)
12 51020 50
COLLECTOR TO BASE VOLTAGE : V
Fig.8 Collector output capacitance
vs. collector-base voltage
2
EMITTER INPUT CAPACITANCE : Cib (pF)
1
12 5 10
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.9 Emitter input capacitance
vs. emitter-base voltage
Rev.A 3/3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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