ROHM 2SC5880 Schematic [ru]

Transistors

Power transistor (60V, 2A)

2SC5880

zFeatures

1) High speed switching.

(tf : Ty p. : 35ns

at IC = 2A)

2) Low saturation voltage, typically

(Typ. : 200mV

at IC = 1.0A, IB = 100mA)

3) Strong discharge power for inductive load and
capacitance load.

4) Complements the 2SA2093

zApplications
Low frequency amplifier
High speed switching

zDimensions (Unit : mm)

ATV

(1) Emitter
(2) Collector
(3) Base

Symbol : C5880

2SC5880

Taping specifications

zStructure
NPN Silicon epitaxial planar transistor

zPackaging specifications

Taping

TV2

2500

Type

2SC5880

Package
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature
Range of storage temperature

∗Pw=10ms

DC
Pulsed

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

t

j

t

stg

Limits Unit

60
60

6
2
4

1.0

150

−55 to 150

W

°C
°C

V
V
V
A

∗

A

Rev.B 1/3

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Condition

Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Corrector output capacitance

Turn-on time
Storage time
Fall time

∗Non repetitive pulse

FE RANK

zh

Q

120−270

180−390

zElectrical characteristic curves

10

(A)

C

1

Ta=125°C
Ta=25°C
Ta= −40°C

0.1

COLLECTOR CURRENT : I

0.01
0 1.510.5

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded Emitter

Propagation Characteristics

10

R

VCE=2V

Ta=25°C

BV
BV
BV

V

CEO
CBO
EBO

I

CBO

I

EBO

CE (sat)

h

FE

f

T

Cob

on

t

t

stg

t

f

60
60

6

−

−

−

120

−

−

−

−

−

1000

FE

100

10

DC CURRENT GAIN : h

−

−

−

−

−

500

200

390

−

200

10

50

120

35

1

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

Fig.2 DC Current Gain vs.

Collector Current (Ι)

10

−

−

−

1.0

1.0

−

−

−

−

−

VCE=5V
V
V

CE
CE

=3V
=2V

V
V
V

µA
µA

mV

−

MHz

pF

ns
ns
ns

Ta=25°C

IC / IB=10 / 1

IC=1mA
I

C

=100µA

E

=100µA

I
V

CB

=40V

EB

=4V

V
I

C

=1.0A

I

B

=0.1A

V

CE

=2V

C

=100mA

I
V

CE

=10V

I

E

= −100mA

f=10MHz

CB

=10V

V
I

E

=0mA

f=1MHz

C

=2A

I
IB1=200mA
IB2= −200mA
V

CC

25V

1000

FE

DC CURRENT GAIN : h

2SC5880

∗

VCE=2V

100

Ta=125°C
Ta=25°C
Ta= −40°C

10

1

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

Fig.3 DC Current Gain vs.

Collector Current (ΙΙ)

10

IC / IB=10 / 1

1

(V)

CE (sat)

COLLECTOR SATURATION

VOLTAGE : V

0.01

IC / IB=20 / 1

C

/ IB=10 / 1

I

0.1

0.001 1010.10.01

COLLECTOR CURRENT : IC (A)

Fig.4

Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)

1

(V)

CE (sat)

0.1

COLLECTOR SATURATION

VOLTAGE : V

0.01

Fig.5

Ta=125°C
Ta=25°C
Ta= −40°C

0.001 1010.10.01

COLLECTOR CURRENT : IC (A)

Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)

1

(V)

BE (sat)

0.1

BASE EMITTER SATURATION

VOLTAGE : V

0.01

0.001 1010.10.01

COLLECTOR CURRENT : IC (A)

Ta=125°C
Ta=25°C
Ta= −40°C

Fig.6 Base-Emitter Saturation

Voltage vs. Collecter Current

Rev.B 2/3