ROHM 2SC5876 Schematic [ru]
2SC5876
Transistor
Medium power transistor (60V, 0.5A)
2SC5876
zFeatures
1) High speed switching. (Tf : Typ. : 80ns
at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV
at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2088
zApplications
Small signal low frequency amplifier
High speed switching
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Taping
T106
3000
Type
2SC5876
Package
Code
Basic ordering unit
(pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.
Symbol
CBO
V
VCEO
EBO
V
IC
ICP
PC
Tj
Tstg
−55 to +150
Rev.A 1/3
zExternal dimensions (Unit : mm)
UMT3
(1)Emitter
(2)Base
(3)Collector
Limits Unit
60
60
6
0.5
1.0
200
mW
150
)
3
(
0.3
1.25
2.1
0.15
0.1Min.
Abbreviated symbol : VS
V
V
V
A
∗1
A
∗2
°C
°C
)
1
(
0.65
)
2
2.0
1.3
(
0.65
0.2
0.9
0.7
Each lead has same dimensions
Transistor
zElectrical characteristics (T a=25°C)
Parameter Symbol
500µs
Ta=25°C
VCE=5V
BV
BV
BV
V
Collector−base breakdown voltage
Collector−emitter breakdown voltage
Emitter−base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector−emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
∗1 Pulse measurement
zh
FE RANK
QR
120-270 180-390
zElectrical characteristic curves
10
(A)
C
1
0.1
COLLECTOR CURRENT : I
0.01
COLLECTOR EMITTER VOLTAGE : VCE (V)
DC
1100.1 100
Fig.1 Safe operating area
1000
FE
100
10
DC CURRENT GAIN : h
1
0.001 0.01 0.1 1
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector
current
Single non
repetitive pulse
1ms
10ms
100ms
V
CE
=2V
VCE=3V
Min.
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
FE
h
fT
Cob
ton
tstg
tf
Typ. Max.
60 −−
60
120
−−
−
6
−
−
−
−
−
150
−−
−
300
−
5
70
−
130
−
−
80
−
1.0
1.0
300
390
−
−
−
−
−
Unit
V
V
V
µA
µA
mV
MHz
pF
ns
ns
ns
1000
100
SWITCHING TIME (ns)
10
0.01 0.1
Tstg
Tf
Ton
COLLECTOR CURRENT : IC (A)
Ta=25°C
CC
=25V
V
C/IB
=10/1
I
1
Fig.2 Switching Time
10
1
(sat)(V)
CE
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.001 0.01 0.1
COLLECTOR CURRENT : I
Fig.5 Collector-emitter saturation voltage
vs. collector current
Ta=125°C
Ta= −40°C
IC/IB=10/1
Ta=25°C
C
(A)
2SC5876
Conditions
I
C
=100µA
I
C
=1mA
E
=100µA
I
V
CB
=40V
V
EB
=4V
I
C
=100mA, IB=10mA
V
CE
=2V, IC=50mA
∗
CE
=10V, IE= −100mA, f=10MHz
V
V
CB
=10V, IE=0mA, f=1MHz
I
C
=500mA,
B1
=50mA
I
B2
= −50mA
I
CC
V
10
1
∗
1
25V
1000
FE
100
10
DC CURRENT GAIN : h
1
Fig.3 DC current gain vs. collector
10
1
(sat)(V)
CE
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.001 0.10.01 1
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta=125°C
Ta= −40°C
0.01 0.10.001 1
COLLECTOR CURRENT : IC (A)
current
IC/IB=20/1
COLLECTOR CURRENT : I
1
Ta=25°C
IC/IB=10/1
Ta=25°C
C
(A)
VCE=2V
Rev.A 2/3
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