ROHM 2SC5868 Schematic [ru]
Transistors
Medium power transistor (60V, 0.5A)
2SC5868
zFeatures
1) High speed switching.
(Tf : Typ. : 80ns
at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 75mV
at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2090
zApplic ations
Small signal low frequency amplifier
High speed switching
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Taping
TL
3000
Type
2SC5868
Package
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
Symbol
V
V
V
Tstg
CBO
CEO
EBO
I
I
CP
P
Tj
C
C
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
Limits Unit
60
60
6
0.5
1.0
500
150
−55 to 150
Abbreviated symbol : VS
V
V
V
A
A
mW
°C
°C
0.95
1.9
0.95
0.16
0.3 0.6
2.8
1.6
)
1
(
)
2
(
0 0.1
∗1
∗2
0.4
)
2.9
3
(
0.85
0.7
1.0MAX
Each lead has same dimensions
2SC5868
1/3
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Condition
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Turn-on time
Storage time
Fall time
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits
zhFE RA NK
Q
120−270
R
180−390
zElectrical characteristic curves
10
(A)
C
1
100ms
10ms
0.1
Single
COLLECTOR CURRENT : I
non repetitive
Pulsed
0.01
0.1 100101
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Safe Operating Area
1000
FE
100
10
DC CURRENT GAIN : h
1
0.001 10.10.01
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
1ms
DC
500µs
Ta=25°C
VCE=5V
CE=3V
V
CE=2V
V
BV
BV
BV
V
Tstg
I
CBO
I
EBO
CE (sat)
h
Cob
Ton
Tf
CEO
CBO
EBO
60
60
6
−
−
−
FE
f
T
120
−
−
−
−
−
1000
100
SWITCHING TIME : (ns)
10
0.01 1010.1
10
1
(V)
CE (sat)
0.1
COLLECTOR SATURATION
VOLTAGE : V
0.01
0.001 10.10.01
COLLECTOR CURRENT : IC (A)
Fig.5
Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
1.0
1.0
300
390
−
−
−
−
−
−
−
−
Ta=25°C
CC
=25V
V
C
/ IB=10 / 1
I
−
−
−
−
−
75
−
300
5
70
130
80
Tstg
Tf
Ton
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
IC / IB=10 / 1
Ta=125°C
Ta=25°C
Ta= −40°C
V
V
V
µA
µA
mV
−
MHz
pF
ns
ns
ns
I
C
=1mA
I
C
=100µA
E
=100µA
I
V
CB
=40V
V
EB
=4V
I
C
=100mA
B
=10mA
I
V
CE
=2V
I
C
=50mA
V
CE
=10V
E
= −100mA
I
f=10MHz
V
CB
=10V
I
E
=0mA
f=1MHz
IC=500mA
IB1=50mA
I
B2
= −50mA
V
CC
25V
1000
FE
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
DC CURRENT GAIN : h
1
0.001 10.10.01
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
10
1
(V)
CE (sat)
0.1
COLLECTOR SATURATION
VOLTAGE : V
0.01
0.001 10.10.01
COLLECTOR CURRENT : IC (A)
Fig.6
Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
2SC5868
∗1
∗1
∗2
Collector Current (Ι)
IC / IB=20 / 1
C
/ IB=10 / 1
I
VCE=2V
Ta=25°C
2/3
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