ROHM 2SC5866 Schematic [ru]
2SC5866
Transistor
Medium power transistor (60V, 2A)
2SC5866
zFeatures
1) High speed switching. (Tf : Typ. : 35ns
at IC = 2A)
2) Low saturation voltage, typically
(Typ. : 200mV
at IC = 1.0m, IB = 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2094
zApplic ations
Low frequency amplifier
High speed switching
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Type
2SC5866
Package
Code
Basic ordering unit
(pieces)
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
−55 to +150
Rev.A 1/3
zExternal dimensions (Units : mm)
2.8
TSMT3
(1)Base
(2)Emitter
(3)Collector
1.6
)
1
(
0.95
1.9
0.95
)
2
(
0.16
0.3 0.6
0 0.1
Abbreviated symbol : VL
Limits Unit
60
60
6
2
4
500
150
V
V
V
A
A
mW
°C
∗
1
∗
2
°C
0.4
)
2.9
3
(
0.85
0.7
1.0MAX
Each lead has same dimensions
Transistor
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Collector−base breakdown voltage
Collector−emitter breakdown voltage
Emitter−base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector−emitter staturation voltage
BV
BV
BV
I
I
V
CE(sat)
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
∗1 Non repetitive pulse
∗2 See switching charactaristics measurement circuits
zh
FE RANK
QR
120-270 180-390
zElectrical characteristic curves
10
1
0.1
0.01
COLLECTOR CURRENT : IC (A)
Single non
repoetitive pulse
0.001
COLLECTOR EMITTER VOLTAGE : VCE (V)
100ms
DC
1100.01 0.1 100
Fig.1 Safe operating area
1000
FE
V
CE
100
=2V
1ms
10ms
Ta=25°C
VCE=5V
V
CE
=3V
CBO
CEO
EBO
CBO
EBO
FE
h
fT
C
ob
T
on
T
stg
Tf
1000
100
SWITCHING TIME (ns)
10
0.01 0.1
10
1
(sat)(V)
CE
Typ. Max.
Min.
60 −−
60
120
−−
−
6
−
−
−
200
−
200
−
10
50
−
120
−
−
35
−
−
1.0
−
1.0
500
−−
390
−
−
−
−
−
Tstg
Tf
Ton
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
Ta=125°C
1
IC/IB=10/1
Unit
V
V
V
µA
µA
mV
MHz
pF
ns
ns
ns
Ta=25°C
V
I
2SC5866
Conditions
I
C
=
100µA
I
C
=
1mA
E
=
100µA
I
V
CB
=
40V
EB
=
4V
V
I
C
=
1A, I
V
CE
=
2V, I
V
CE
=
10V, I
CB
=
10V, I
V
C
=
2A,
I
B1
=
200mA
I
B2
= −
200mA
I
CC
25V
V
CC
=25V
C/IB
=10/1
10
∗1
B
=
0.1A
C
=
100mA
E
= −
100mA, f=10MHz
E
=
0mA, f=1MHz
∗2
∗1
1000
Ta=125°C
FE
100
Ta= −40°C
10
DC CURRENT GAIN : h
1
0.001 0.01 0.1 101
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector
current
10
1
(sat)(V)
CE
Ta=25°C
Ta=25°C
VCE=2V
10
DC CURRENT GAIN : h
1
0.001 0.01 0.1 101
COLLECTOR CURRENT : I
Fig.4 DC current gain vs. collector
current
C
(A)
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.001 0.01 0.1
COLLECTOR CURRENT : I
Fig.5 Collector-emitter saturation voltage
vs. Collector Current
Ta=25°C
Ta= −40°C
C
(A)
101
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.001 0.10.01 101
Fig.6 Collector-emitter saturation voltage
IC/IB=20/1
COLLECTOR CURRENT : I
vs. collector current
IC/IB=10/1
C
(A)
Rev.A 2/3
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