ROHM 2SC5865 Schematic [ru]
Transistors
2SC5865
High voltage discharge, High speed switching
,
Low Noise (60V, 1A)
2SC5865
zFeatures
1) High speed switching. ( Tf : Typ. : 50ns at IC =
2) Low saturation voltage, typically.
(Typ. : 200mV
at IC
=
500mA, IB = 50mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SA2092.
zApplications
High speed switching, Low noise
zStructure
NPN silicon epitaxial planar transistor
zPackaging specifications
Taping
TL
3000
Type
2SC5865
Package
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
Symbol
V
CBO
V
CEO
EBO
V
I
C
I
CP
P
C
Tj
Tstg
1.0
A)
Limits Unit
60
60
6
1.0
2.0
500
150
−55 to +150
zDimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
V
V
V
A
∗1
A
∗2
mW
°C
°C
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
Abbreviated symbol : VU
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
1/4
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturatioin voltage
DC current gain
Transistor frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
∗1 Non repetitive pulse
∗2 See switching characteristics measurement circuits
zhFE RANK
QR
120-270 180-390
BV
BV
BV
I
I
V
CE(sat)
Cob
tstg
CBO
EBO
h
fT
ton
FE
tf
CEO
CBO
EBO
Min.
Typ. Max. Unit Conditions
60
60
6
−
−
−
120
−
−
−
−
−
−−
−−
−
1.0
−
1.0
−
200 500
390
−−
250
10
50
130
50
V
C
=1mA
I
C
=100µA
I
V
V
E
µA
µA
mV
pF
ns
ns
ns
I
V
V
C
I
V
V
V
C
I
B1
I
B2
I
V
=100µA
CB
EB
=4V
=500mA, IB=50mA
CE
CE
=10V, IE= −100mA, f=10MHz
CB
=10V, IE=0mA, f=1MHz
=1A,
=100mA
= −100mA
CC
−
MHz
−
−
−
−
−
=40V
=2V, IC=100mA
∗2
25V
2SC5865
∗1
2/4
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