ROHM 2SC5824 Schematic [ru]
Transistor
Power transistor (60V, 3A)
2SC5824
zFeatures
1) High speed switching. (Tf : Typ. : 30ns
at IC = 3A)
2) Low saturation voltage, typically (T yp . : 200mV
I
B = 200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2071.
zApplications
NPN Silicon epitaxial planar transistor
zStructure
Low frequency amplifier
High speed switching
zPackaging specifications
Taping
T100
1000
Type
2SC5824
Package
Code
Basic ordering unit
(pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗
1 Pw=100ms
∗
2 Each terminal mounted on a recommended land.
∗
3 Mounted on a 40x40x0.7(mm) ceramic substrate
Symbol
CBO
V
V
CEO
EBO
V
I
C
I
CP
P
C
P
C
Tj
Tstg
at IC = 2A,
−55~+150
zDimensions (Unit : mm)
MPT3
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Sourse)
Limits Unit
60
60
6
3
6
500
2.0
150
mW
Each lead has same dimensions
Abbreviated symbol : UP
V
V
V
A
∗1
A
∗2
∗3
W
°C
°C
2SC5824
Rev.B 1/3
Transistor
zElectrical characteristics (T a=25°C)
Parameter Symbol
Collector−base breakdown voltage
Collector−emitter breakdown voltage
Emitter−base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector−emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
∗1 Non repetitive pulse
∗2 See switching charactaristics measurement circuits
zh
FE RANK
QR
120-270 180-390
zElectrical characteristic curves
10
Ta=125°C
(A)
C
1
Ta=100°C
0.1
COLLECTOR CURRENT : I
0.01
0 0.5 1 1.5 2
BASE TO EMITTER VOLTAGE : V
Fig.1 Ground emitter propagation
characteristics
10
1
sat)(V)
(
CE
Ta= −40°C
Ta=25°C
BVCBO 60 −−
BV
BV
VCE(sat)
VCE=2V
BE
(V)
Ta=25°C
Typ. Max.
Min.
−−
−
6
−
−
−
200
−
200
−
20
50
−
150
−
−
30
−
−
1.0
−
1.0
500
−−
390
−
−
−
−
−
ICBO
IEBO
hFE
fT
Cob
ton
stg
t
tf
CEO
EBO
60
120
1000
100
10
DC CURRENT GAIN : hFE
1
0.001 0.01 0.1 101
COLLECTOR CURRENT : I
Fig.2 DC current gain vs. collector
current
10
)(V)
1
(sat
CE
Ta=100°C
V
V
CE
Unit
mV
MHz
CE
=3V
=2V
C
(A)
IC/IB=10/1
Ta=125°C
Conditions
V
I
C=100µA
I
C=1mA
V
V
I
E=100µA
V
CB=40V
µA
EB=4V
V
µA
I
C=2A, IB=200mA
CE=2V, IC=100mA
V
V
CE=10V, IE= −100mA, f=10MHz
pF
V
CB=10V, IE=0mA, f=1MHz
ns
C=3A,
I
B1=300mA
I
ns
B2= −300mA
ns
Ta=25°C
VCE=5V
I
V
CC
∗2
25V
1000
FE
100
10
DC CURRENT GAIN : h
1
0.001 0.01 0.1 101
Fig.3 DC current gain vs. collector
10
(sat) (V)
BE
1
2SC5824
∗1
Ta= −40°C
COLLECTOR CURRENT : IC (A)
current
Ta=25°C
Ta=25°C
Ta=100°C
Ta= −40°C
∗1
Ta=125°C
IC/IB=10/1
VCE=2V
0.1
IC/IB=20/1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.001 0.10.01 101
COLLECTOR CURRENT : I
Fig.4 Collector-emitter saturation voltage
vs. collector current
IC/IB=10/1
C
(
A)
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.001 0.01 0.1
COLLECTOR CURRENT : I
Fig.5 Collector-emitter saturation voltage
vs. Collector Current
Ta=25°C
Ta= −40°C
C
(A)
101
BASE EMITTER SATURATION
VOLTAGE : V
Ta=100°C
0.1
0.001 0.01 0.1 101
COLLECTOR CURRENT : IC (A)
Fig.6 Base-emitter saturation voltage
vs. collector current
Ta=125°C
Rev.B 2/3
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