ROHM 2SC5585, 2SC5663 Schematic [ru]
2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which w ent only into 2125 size conventionally was att ained in 1608 sizes or 1208 sizes.
zApplica tions
For switching
For muting
zFeatures
1) High current.
2) Low V
CE(sat).
V
CE(sat) ≤ 250mV at IC = 200mA / IB = 10mA
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collectot-base voltage
Collector-emitter voltage
Emitter-base voltage V
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Single pulse Pw = 1ms
Symbol Limits Unit
V
V
Tstg
CBO
CEO
EBO
I
C
I
CP
P
C
Tj
15 V
12
500
150
150
−55 to +150
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current I
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
EBO
V
CE
(sat)
h
FE
f
T
Cob
Min.
15
12
6
−
−−100 VCB = 6VnA
−
270
− 320 − VCE = 2V, IE = −10mA, f = 100MHzMHz
−
V
V6
mA
A1
∗
mW
°C
°C
Typ. Max. Unit Conditions
−
−
−
−
−
−
−
100
90
250
−
680
7.5
−
zExternal dimensions (Unit : mm)
2SC5585
0.3
0.15
0.1Min.
Abbreviated symbol : BX
1.2
Abbreviated symbol : BXROHM : VMT3
C
VI
C
V
I
E
I
V
V
nA
mV
C
I
V
−
V
pF
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
2SC5663
= 10µA
= 1mA
= 10µA
CB
= 15V
= 200mA, IB = 10mA
CE
= 2V, IC = 10mA
CB
= 10V, IE = 0A, f = 1MHz
0.32
0.5
(3)
0.13
(3)
1.2
0.80.2
0~0.1
0.8
1.6
0~0.1
(1)
(2)
0.2
(2)
(1)
0.22
0.15Max.
0.2
1.6
1.0
0.50.5
0.2
0.7
0.55
(1) Emitter
(2) Base
(3) Collector
0.8
0.40.4
(1) Base
(2) Emitter
(3) Collector
Rev.B 1/2
2SC5585 / 2SC5663
Transistors
zPackaging specifications
Type
2SC5585
2SC5663
zElectrical characteristic curves
1000
500
(mA)
C
200
100
50
20
10
5
COLLECTOR CURRENT : I
2
1
0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
1000
(mV)
500
CE(sat)
200
100
50
IC/
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR SATURATION VOLTAGE : V
Fig.4 Collector-emitter saturation voltage
1000
500
200
100
50
20
10
5
2
1
0.1
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.7 Collector output capacitance
vs collector-base voltage
Rev.B 2/2
Package
Code
Basic ordering
h
FE
unit (pieces)
VCE = 2V
C
°
C
°
C
°
25
25
1
-40
Ta =
0.5 1.0
characteristics
Ta = 25°C
IB = 50
20
10
COLLECTOR CURRENT : IC (mA)
vs. collector current ( ΙΙ )
I
E
=
0A
f
=
1MHz
Ta = 25°C
Cib
Cob
1
0.2
0.5
EMITTER TO BASE VOLTAGE : VEB (V)
Emitter input capacitance
vs emitter-base voltage
10 20
5
2
Taping
TL
3000
T2L
8000
−
−
1000
500
FE
200
100
DC CURRENT GAIN : h
1.5
50
20
10
5
2
1
1 2 5 10 20 50 100 200 500
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
10000
(mV)
5000
BE(sat)
2000
1000
500
200
100
50
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR SATURATION VOLTAGE : V
Ta =
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
50 100
Ta = 125°C
25°C
-40°C
-40°C
25°C
125°C
IC/
VCE =
IB =
2V
1000
(mV)
500
CE(sat)
200
100
50
Ta = 125°C
20
10
5
2
1000
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR SATURATION VOLTAGE : V
25°C
-40°C
COLLECTOR CURRENT : IC (mA)
IC/
IB =
20
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
20
1000
500
V
CE
=
2V
Ta = 25°C
Pulsed
200
100
)
Z
50
MH
(
T
f
20
10
5
2
1
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
102050
215
Emitter input capacitance
100 200
500 1000
vs. base voltage
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