ROHM 2SC5103 Schematic [ru]
2SC5103
Transistors
High speed switching transistor (60V, 5A)
2SC5103
zFeatures
1) Low V
CE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)
2) High speed switching (tf : Typ. 0.1 µs at I
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
Single pulse Pw=100ms
V
V
V
Tstg
CBO
CEO
EBO
I
C
P
Tj
Limits
100
60
5
5
10
C
1
10 W(Tc=25°C)
150
−55 to +150
zPackaging specifications and h
Type 2SC5103
Package
FE
h
Basic ordering unit (pieces)
Code
CPT3
Q
TL
2500
FE
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Measured using pulse current.
∗
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
BE(sat)
V
h
FE
f
T
Cob
t
on
stg
t
t
f
C = 3A)
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Typ.
Min.
100
60
5
−
−
−
−
−−
−
−
−
0.15
−−
−−
−−
120
−
40 −−
120
−
80
−
−
−
−
−
−
0.1 0.3
zExternal dimensions (Unit : mm)
)
1
(
)
2.3
2
(
)
3
(
2.3
0.8Min.
1.0
I
I
I
V
V
I
I
IC/I
IC/I
V
V
V
I
I
V
C
C
E
CB
EB
C/IB
C/IB
CE/IC
CE/IC
CB
CE
C
B1
CC
=
=
=
B
B
=
=
50µA
1mA
50µA
=
100V
=
5V
=
3A/0.15A
=
4A/0.2A
=
3A/0.15A
=
4A/0.2A
=
=
=
10V , I
=
10V , I
3A , R
−I
B2
30V
0.5
2V/1A
2V/3A
L
=
0.15A
E
E
=
∗
Max. Unit
−
−
10
10
0.3
0.5 V
1.2 V
1.5 V
270
−
−
0.3
1.5
ROHM : CPT3
EIAJ : SC-63
V
V
V
µA
µA
V
−
− V
MHz
pF
µs
µs
µs
1.5
5.5
0.75
0.9
0.9
0.65
1.5
2.5
9.5
Conditions
= −
0.5A , f = 30MHz
=
0A , f = 1MHz
10Ω
6.5
5.1
C0.5
0.5
(1) Base
2.3
(2) Collector
(3) Emitter
∗
∗
∗
∗
∗
Rev.A 1/3
2SC5103
Transistors
zElectrical characteristics curves
5
50mA
4
3
2
1
COLLECTOR CURRENT : IC (A)
0
123450
COLLECTOR TO EMITTER VOLTAGE : V
45mA
=
B
I
5mA
40mA
35mA
30mA
25mA
20mA
15mA
10mA
Ta=25
°C
CE
Fig.1 Ground emitter output characteristics
(V)
(V)
10
BE(sat)
CE(sat)
5
: V
2
Ta= −
25
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01 0.02 0.05
BASE SATURATION VOLTAGE
COLLECTOR SATURATION VOLTAGE : V
Fig.4
Collector-emitter saturation voltage
Base-emitter saturation voltage
°C
100
25
Ta=
COLLECTOR CURRENT : IC (A )
°C
°C
100
°C
−25
°C
0.1 0.2 0.5 1 2 5 10
25
°C
−
collector current
IC/IB=20
BE(sat)
V
V
10
5
)
)
µs
)
µs
2
µs
1
0.5
0.2
0.1
FALL TIME : tf (
TURN ON TIME : ton (
STRAGE TIME : tstg (
0.05
0.02
0.01
0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.7 Switching characteristics
IC=20 IB1= −20 I
PULSE
tstg
tf
ton
(V)
CE(sat)
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
COLLECTOR CURRENT : IC (A)
0.002
0.001
BASE TO EMITTER VOLTAGE : VBE
Fig.2
Ground emitter propagation characteristics
1000
500
(MHz)
T
200
100
50
20
10
5
TRANSITION FREQUENCY : f
2
1
−0.001−0.002 −0.005 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1
Fig.5
Gain bandwidth product vs.emitter current
C
°
C
°C
°
100
25
=
−25
Ta
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60
EMITTER CURRENT : IE (A)
B2
DC
5
(A)
C
2
1
0.5
0.2
Tc=25
COLLECTOR CURRENT : I
°C
∗Single
0.1
nonrepetitive
pulse
0.05
0.5 1 2 5 10
COLLECTOR TO EMITTER VOLTAGE : V
Pw
=100ms
Ic
MAX
(Pulse∗)
10
Fig.8 Safe operating area
VCE=
2V
(V)
Ta=25
VCE=10V
∗
10ms
∗
20 50 100
°C
CE
1000
500
FE
DC CURRENT GAIN : h
Ta=
200
100
50
20
10
5
2
1
0.01 0.02 0.05
100
25
°C
COLLECTOR CURRENT : IC (A)
°C
−25
°C
0.1 0.2 0.5 1 2 5 10
Fig.3 DC current gain vs. collector current
10000
5000
2000
1000
500
200
100
50
20
10
COLLECTOR OUTPUT CAPACITWANCE : Cob(pF)
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance vs.
collector-base voltage
10000
(°C/W)
th
1000
: R
100
10
1
0.1
0.01
TRANSIENT THERMAL RESISTANCE
0.001 0.01 0.1 1 10 100 1000
(V)
(1)Using infinite heat sink
(2)Unmounted
TIME : t
(s)
Fig.9 Transient thermal resistance
VCE=2V
Ta=25
E
=0A
I
f=1MHz
°C
(2)
(1)
Rev.A 2/3
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