ROHM 2SC5060 Datasheet

Transistors

Power transistor (90±10V, 3A)

2SC5060

2SC5060

!!!!Features

1) Built-in zener diode between collector and base.

2) Zener diode has low voltage dispersion.

3) Strong protection against reverse power surges due to “L”
loads.

4) Darlington connection for high DC current gain.

5) Built-in resistor between base and emitter.

6) Built-in damper diode.

!!!!Equivalent circuit

C

B

R

2

R

: Base

B

: Collector

C

: Emitter

E

1

R1 3kΩ

2

1kΩ

R

E

!!!!Absolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Collector power dissipation

Junction temperature
Storage temperature

∗1 Single pulse Pw=10ms
∗2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm

Parameter Symbol

V
V
V

Tstg

CBO
CEO
EBO

I

C

I

CP

P

C

Tj

2

.

Limits
90±10
90±10

6
1
2
1

150

−55~+150

Unit

V
V
V

A(DC)

A(Pulse)

W

°C
°C

!!!!External dimensions (Units : mm)

6.8

0.65Max.

0.5

(2)

(3)

(1)

2.54

2.54

ROHM : ATV

∗1
∗2

2.5

4.4

0.9

1.0

14.5

0.451.05

Taping specifications

(1) Emitter
(2) Collector
(3) Base

!!!!Packaging specifications and h

Type 2SC5060

Package

FE

h

Code

Basic ordering unit (pieces)

ATV

TV2
2500

FE

M

!!!!Electrical characteristics (Ta=25°C)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time

∗1

Measured using pulse current. ∗2 Transition frequency of the device.

Parameter Symbol Min. Typ. Max. Unit Conditions

BV

CBO

BV

CEO

I

CBO

I

EBO

h

FE

V

CE(sat)
BE(sat)

V

f

T

Cob

on

t
t

stg

f

t

80

−

80

−

−

1000

−

−−2

−

−

− 0.2 −µs

− 5 −µs

− 0.6 −µs

100

−

100

−

10

−

3

−

2500

−

1.5

80

−

20

−

V

I

C

=50µA

V

I

C

=1mA

CB

=70V

µA

V

EB

=5V

V

mA

−

CE

=3V, IC=0.5A

V
I

C/IB

=500mA/1mA

V
VIC/IB=500mA/1mA

MHz

CB

=5V, IE=−0.1A, f=30MHz

V

pF

CE

=10V, IE=0A, f=1MHz

V
I

C

=0.8A, RL=50Ω

B1

=−IB2=8mA

I
V

CC

40V

∗1

∗1
∗2