ROHM 2SC5053 Schematic [ru]
Transistors
Medium power transistor (50V, 1A)
2SC5053
zFeatures
1) Low saturation voltage, typically V
IB =
500mA / 50mA
2) P
=2W (on 40×40×0.7mm ceramic board)
C
CE(sat)
3) Complements the 2SA1900
z Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage
Collector current
Collector power dissipation
Collector power dissipation
Storage temperature
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40 40 0.7mm seramic board.
+
Symbol Limits
V
CBO
V
CEO
V
EBO
I
C
P
C
t
j
t
stg
+
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance Cob
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
zPackaging specifications and hFE
Type
Package
h
FE
Marking CG
Basic ordering unit (pleces)
∗ Denotes
Code
h
FE
2SC5053
MPT3
QR
∗
T100
1000
=
0.12V at IC /
60
50
5
1
2
0.5
2
150
−55 to +150
60
50
5
−
−
−
120
−
−
zDimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
Unit
V
V
V
A
A (Pulse)
∗1
W
W
∗2
°C
°C
−
−
0.1
0.1
0.4
V
−
V
−
V
µA
µA
V
−
−
MHz
−
pF
150
15
−
−
−
−
−
−
390
C
=
50µA
I
I
C
=
1mA
E
=
50µA
I
CB
=
40V
V
EB
=
4V
V
C/IB
=
500mA/50mA
I
V
CE/IC
V
CE
=
5V , IE =
V
CB
=
10V , IE =
=
3V/0.5A
−50mA , f=100MHz
0A , f=1MHz
2SC5053
Rev.D 1/2
Transistors
zElectric characteristics curves
1000
900
800
(mA)
C
700
600
500
400
300
200
COLLECTOR CURRENT : I
100
0
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output characteristics
1000
500
(MHz)
T
200
100
50
20
10
5
TRANSITION FREQUENCY : f
2
1
9mA
8mA
10mA
12345
EMITTER CURRENT : I
7mA
6mA
5mA
E
4mA
3mA
IB=1mA
Ta=25°C
V
CE
(A)
2mA
=5V
Fig.4 Gain bandwith product
vs. emitter current
−1−0.1−10m−1m
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
0.002
0.02 0.05 0.1 0.2 0.50.001
0.005 1 2
0.01
COLLECTOR CURRENT : IC (A)
Ta=25°C
VCE=3V
Fig.2 DC current gain
vs. collector current
200
(pF)
ob(
100
50
20
10
5
2
1
COLLECTOR OUTPUT CAPACITANCE : C
0.1 0.2 0.5 1 202510
COLLECTOR TO BASE VOLTAGE : VCB (V)
Ta=25°C
f=1MHz
I
E
=0A
Fig.5 Collector output capacitance
vs. collector-base voltage
2SC5053
1000
(mV)
500
CE(sat)
200
100
50
20
10
5
2
1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation voltage
vs.collector current
5
∗
I
C Max.
(Pulse )
2
(A)
C
1
0.5
0.2
0.1
0.05
COLLECTOR CURRENT : I
Ta=25°C
0.02
∗
Single
nonrepeatitive pulse
0.01
100ms
12 51020500.2 0.5 100
COLLECTOR TO EMITTER VOLTAGE : ICE (V)
Fig.6 Safe operating area
Ta=25°C
I
C/IB
100m1m 10m 1 2
10ms
DC
=10
Rev.D 2/2
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