ROHM 2SC4713K, 2SC4774 Schematic [ru]
2SC4774 / 2SC4713K
Transistors
High frequency amplifier transistor,
RF switching (6V, 50mA)
2SC4774 / 2SC4713K
zFeatures
1) Very low output-on resistance (Ron).
2) Low capacitance.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
V
Tstg
Limits
CBO
CEO
EBO
I
C
P
C
Tj
12
6
3
50
0.2
150
−55 to +150
Unit
V
V
V
mA
W
°C
°C
zPackaging specifications and h
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denot
es h
FE
∗
2SC4774
UMT3
BM
T106
3000
FE
2SC4713K
SMT3
S
∗
S
BM
T146
3000
∗
zElectrical characteristics (T a=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
BV
BV
BV
V
12
270
300
−
6
−
3
−
−
−
−
−
−
−
−
800
1
−
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
Cob
Ron − 2 −ΩI
560
V
−
V
−
V
−
µA
0.5
µA
0.5
V
0.3
−
MHz
−
pF
1.7
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD pro tection circuit.
zDimensions (Unit : mm)
2SC4774
ROHM : UMT3
EIAJ : SC-70
2SC4713K
ROHM : SMT3
EIAJ : SC-59
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=10V
V
EB
=2V
I
C/IB
=10mA/1mA
V
CE/IC
=5V/5mA
V
CE
=5V, IE= −10mA, f=200MHz
V
CB
=10V, IE=0A, f=1MHz
B
=3mA, VI=100mVrms, f=500kHz
2.0
(3)
(2)
0.65
1.3
(3)
(2)
0.95 0.95
0.9
0.7
0.2
0.3
2.1
1.25
(1)
0.65
0.15
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
2.9
0.4
1.9
1.1
0.8
1.6
2.8
(1)
0.15
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
0.1Min.
0.3Min.
Rev.B 1/2
2SC4774 / 2SC4713K
Transistors
zElectrical characteristic curves
10
Ta=25°C
(mA)
8
C
6
4
2
COLLECTOR CURRENT : I
0
10 2345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1
Grounded emitter output
characteristics ( )
1000
FE
500
200
100
50
20
DC CURRENT TRANSFER RATIO : h
10
COLLECTOR CURRENT : IC (mA)
Fig.4
DC current gain vs. collector current
20
(pF)
10
re
5
2
1
0.5
FEEDBACK CAPACITIANCE : C
0.2
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7
Collector output capacitance
vs. voltage
35mA
30mA
25mA
20mA
15mA
10mA
5mA
I
B
=0µ
Ta=25°C
CE
=5V
V
Ta=25°C
f=1MHz
50
Ta=25°C
(mA)
40
C
COLLECTOR CURRENT : I
A
1.0mA
30
20
10
0
0.10 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2
Grounded emitter output
characteristics ( )
(mA)
1000
CE(sat)
500
200
100
50
20
10
5
500.1 200.2 100.5 512
COLLECTER SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (mA)
Fig.5
Collector-emitter saturation
voltage vs. collector current
20
10
(pF)
ob
5
2
1
0.5
OUTPUT CAPACITANCE : C
500.1 200.2 100.5 512
0.2
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Back capacitance voltage
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
I
B
=
0mA
Ta=25°C
C/IB
=10
I
Ta=25°C
f=1MHz
50
(mA)
40
C
30
20
10
COLLECTOR CURRENT : I
0
Fig.3
characteristics
2000
1000
(MHz)
T
500
200
100
50
GAIN BANDWIDTH PRODUCT : f
500.1 200.2 100.5 512
20
Fig.6
collector current
50
)
Ω
(
20
on
10
5
ON RESISTANE : R
2
1
500.1 200.2 100.5 512
Fig.9
base current
V
CE
=
°C
°C
°C
25
−25
125
0.40 0.8 1.2 1.6 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
5V
Grounded emitter propagation
Ta=25°C
CE
=5V
V
COLLECTOR CURRENT : IC (mA)
Gain bandwidth product vs.
Ta=25°C
f=500kHz
υ
i=100mVrms
R
L
=1k
Ω
BASS CURRENT : IB (mA)
Output-on resistance vs.
500.1 200.2 100.5 512
500.1 200.2 100.5 512
Rev.B 2/2
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