Datasheet 2SC4505 Datasheet (ROHM) [ru]

Transistors
Power Transistor (400V, 0.1A)
2SC4505
zFeatures
1) High breakdown voltage. (BV
2) Low saturation voltage, typically V
CE (sat)= 0.05V at IC / IB = 10mA / 1mA.
3) High switching speed, typically tf = 1.7µs at Ic =100mA.
4) Complements the 2SC4505 and the 2SA1759.
z
Packaging specifications and h
Type 2SC4505
Package
FE
h
Marking
Code
ordering unit
FE
(pieces)
Denotes h
Basic
FE
MPT3
PQ
CE T100 1000
z
Absolute maximum ratings
Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation Junction temperature
Storage temperature
1 Single pulse, Pw=20ms, Duty=1/2
2 When mounted on a 40×40×0.7mm ceramic board.
(T a=25°C)
CBO
V V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
400 400
7
0.1
0.2 A (Pulse)
0.5 2
150
55 to +150
z
Electrical characteristics
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time
(T a=25°C)
BV
CBO
BVCEO BVEBO
ICBO IEBO
VCE(sat)
BE(sat) −−1.5 V IC/IB=10mA/1mA
V
hFE
fT
Cob
on 1 −µsIC=−100mA RL=1.5kΩ
t
stg 5.5 −µsIB1=−IB2=10mA
t
t
f 1.7 −µsVCC~150V
A (DC)
400 400
7
82
Unit
V V V
W W
°C °C
z
Dimensions
MPT3
(1)Base (2)Collector (3)Emitter
1
2
0.05
20
7
10 10
0.5
270
(Unit : mm)
(1)
V V V
µA µA
V
MHz
pF
2SC4505
4.5
1.6
(3)(2)
0.5
1.51.5
3.0
C=50µA
I
C=1mA
I I
E=50µA
V
CB=400V
V
EB=6V
C/IB=10mA/1mA
I
CE=10V , IC=10mA
V
CE=10V , IE=−10mA , f=10MHz
V V
CB=10V , IE=0A , f=1MHz
1.5
0.5
2.5
4.0
0.4
1.0
0.40.4
Rev.D 1/3
2SC4505
Transistors
z
Electrical characteristics
200
160
(mA)
C
120
80
40
COLLECTOR CURRENT : I
0
0246810
COLLECTOR TO EMITTER VOLTAGE : V
3.5mA
Fig.1 Ground emitter output characteristics
1000
500
Ta=100
200
EF
100
50
20 10
5
DC CURRENT GAIN : h
2 1
0.001 0.002 0.005
°C
25
°C
0.01 0.02 0.05 0.1 0.2 0.5
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( ΙΙ )
1000
500
(MHz)
T
200 100
50
20 10
5 2
TRANSITION FREQUENCY : f
1
0.005 0.01 0.02 0.05 EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product vs. emitter current
Rev.D 2/3
(T a=25°C)
Ta=25
2.5mA
3.0mA
2.0mA
1.5mA
1.0mA
0.5mA
IB=0mA
VCE=10V
25°C
Ta=25
VCE=10V
0.1 0.2 0.5 1 2
°C
CE
(V)
1
0.5
(A)
C
0.2
0.1
0.05
0.02
0.01
0.005
COLLECTOR CURRENT : I
0.002
0.001
°C
°C
°C
25
25
Ta=100
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characterisitics
10
(V)
5
CE(sat)
2 1
0.5
0.2 IC/IB=20
0.1
0.05
0.02
0.01
1
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
COLLECTOR SATURATION VOLTAGE : V
Fig.5 Collector-emitter saturation voltage vs. collector current
10
5
COLLECTOR CURRENT : IC (A)
Ta=25
°C
1000
(pF)
ob
500
200 100
50
20 10
5 2
1
COLLECTOR OUTPUT CAPACITANCE : C
0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : V
Fig.8 Collector output capacitance vs. collector-base voltage
V
CE
=3V
1.4 1.60.4 0.6 0.8 1.0 1.20.20
Ta=25
f=1MHz I
E
=0A
CB
1000
500
200
EF
100
50
20 10
5
DC CURRENT GAIN : h
2 1
0.001 0.002 0.005
0.01 0.02 0.05 0.1 0.2 0.5
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current ( Ι )
°C
°C
(V)
5
CE(sat)
(V)
2
BE(sat)
1
Ta=25
0.5
25
0.2
0.1
0.05 25
0.02
BASE SATURATION VOLTAGE :V
COLLECTOR SATURATION VOLTAGE :V
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage Collector-base saturation voltage
1
Ic Max. (Pulse)
(A)
C
0.1
0.01
Ta=25°C
COLLECTOR CURRENT : I
Single nonrepetitive pulse
0.001
0.1 1 10 COLLECTOR TO EMITTER VOLTAGE : V
°C
°C
Ta=100
°C
100
°C
25
V
°C
°C
DC
BE(sat)
Pw=100m
10
(V)
Fig.9 Safe operating area
°C
1
C/IB
=10
5V
V
Ta=25
VCE=10V
I
CE(sat)
vs. collector current
Pw=10m
Pw=1m
100 1000
CE
(V)
2SC4505
Transistors
Base current wave form
_~
CC
V
150V
Collector current wave form
90%
I
B1
I
B2
I
C
10%
t
f
t
t
on
stg
V
IN
Pw
Pw_~50µs duty cycle 1%
R
L
=1.5k
I
B1
TUT
I
B2
_~
V
BB
6V
Fig.10 Switching time mesurement circuit
Rev.D 3/3
Appendix
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Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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