ROHM 2SC4505 Schematic [ru]
Transistors
Power Transistor (400V, 0.1A)
2SC4505
zFeatures
1) High breakdown voltage. (BV
CEO = 400V)
2) Low saturation voltage,
typically V
CE (sat)= 0.05V at IC / IB = 10mA / 1mA.
3) High switching speed, typically tf = 1.7µs at Ic =100mA.
4) Complements the 2SC4505 and the 2SA1759.
z
Packaging specifications and h
Type 2SC4505
Package
FE
h
Marking
Code
ordering unit
FE
(pieces)
∗
Denotes h
Basic
FE
MPT3
PQ
CE
T100
1000
∗
z
Absolute maximum ratings
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
1 Single pulse, Pw=20ms, Duty=1/2
∗
2 When mounted on a 40×40×0.7mm ceramic board.
(T a=25°C)
CBO
V
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
400
400
7
0.1
0.2 A (Pulse)
0.5
2
150
−55 to +150
z
Electrical characteristics
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
(T a=25°C)
BV
CBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
BE(sat) −−1.5 V IC/IB=10mA/1mA
V
hFE
fT
Cob
on − 1 −µsIC=−100mA RL=1.5kΩ
t
stg − 5.5 −µsIB1=−IB2=10mA
t
t
f − 1.7 −µsVCC~−150V
A (DC)
400
400
7
−
−
−
82
−
−
Unit
V
V
V
W
W
°C
°C
z
Dimensions
MPT3
(1)Base
(2)Collector
(3)Emitter
∗
1
∗
2
−
−
−
−
−
0.05
−
20
7
−
−
−
10
10
0.5
270
−
−
(Unit : mm)
(1)
V
V
V
µA
µA
V
−
MHz
pF
2SC4505
4.5
1.6
(3)(2)
0.5
1.51.5
3.0
C=50µA
I
C=1mA
I
I
E=50µA
V
CB=400V
V
EB=6V
C/IB=10mA/1mA
I
CE=10V , IC=10mA
V
CE=10V , IE=−10mA , f=10MHz
V
V
CB=10V , IE=0A , f=1MHz
1.5
0.5
2.5
4.0
0.4
1.0
0.40.4
Rev.D 1/3
2SC4505
Transistors
z
Electrical characteristics
200
160
(mA)
C
120
80
40
COLLECTOR CURRENT : I
0
0246810
COLLECTOR TO EMITTER VOLTAGE : V
3.5mA
Fig.1 Ground emitter output characteristics
1000
500
Ta=100
200
EF
100
50
20
10
5
DC CURRENT GAIN : h
2
1
0.001 0.002 0.005
°C
−25
°C
0.01 0.02 0.05 0.1 0.2 0.5
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( ΙΙ )
1000
500
(MHz)
T
200
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1
−0.005 −0.01 −0.02 −0.05
EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product vs. emitter current
Rev.D 2/3
(T a=25°C)
Ta=25
2.5mA
3.0mA
2.0mA
1.5mA
1.0mA
0.5mA
IB=0mA
VCE=10V
25°C
Ta=25
VCE=10V
−0.1 −0.2 −0.5 −1 −2
°C
CE
(V)
1
0.5
(A)
C
0.2
0.1
0.05
0.02
0.01
0.005
COLLECTOR CURRENT : I
0.002
0.001
°C
°C
°C
25
−25
Ta=100
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characterisitics
10
(V)
5
CE(sat)
2
1
0.5
0.2
IC/IB=20
0.1
0.05
0.02
0.01
1
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
COLLECTOR SATURATION VOLTAGE : V
Fig.5 Collector-emitter saturation voltage
vs. collector current
10
5
COLLECTOR CURRENT : IC (A)
Ta=25
°C
1000
(pF)
ob
500
200
100
50
20
10
5
2
1
COLLECTOR OUTPUT CAPACITANCE : C
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : V
Fig.8 Collector output capacitance
vs. collector-base voltage
V
CE
=3V
1.4 1.60.4 0.6 0.8 1.0 1.20.20
Ta=25
f=1MHz
I
E
=0A
CB
1000
500
200
EF
100
50
20
10
5
DC CURRENT GAIN : h
2
1
0.001 0.002 0.005
0.01 0.02 0.05 0.1 0.2 0.5
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current ( Ι )
°C
°C
(V)
5
CE(sat)
(V)
2
BE(sat)
1
Ta=−25
0.5
25
0.2
0.1
0.05
25
0.02
BASE SATURATION VOLTAGE :V
COLLECTOR SATURATION VOLTAGE :V
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
Collector-base saturation voltage
1
Ic Max. (Pulse∗)
(A)
C
0.1
0.01
Ta=25°C
COLLECTOR CURRENT : I
∗Single
nonrepetitive pulse
0.001
0.1 1 10
COLLECTOR TO EMITTER VOLTAGE : V
°C
°C
Ta=100
°C
100
°C
−25
V
°C
°C
DC
BE(sat)
Pw=100m
10
(V)
Fig.9 Safe operating area
°C
1
C/IB
=10
5V
V
Ta=25
VCE=10V
I
CE(sat)
vs. collector current
Pw=10m
Pw=1m
100 1000
CE
(V)
Loading...